In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Similar documents
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0L1ULD. Low capacitance unidirectional ESD protection diode

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0S2BT. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0X1UAB. Ultra low capacitance unidirectional ESD protection diode

PESD36VS2UT. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD24VS1ULD. 1. General description. 2. Features and benefits. 3. Application information. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0S2BQA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PESD3V3S1UB. 1. General description. 2. Features and benefits. 3. Application information. 4. Quick reference data

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD24VL1BA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PTVS22VU1UPA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 300 W Transient Voltage Suppressor

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PTVS20VU1UPA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 300 W Transient Voltage Suppressor

PESD5V0V1BLD. Very low capacitance bidirectional ESD protection diode

Ultra compact transient voltage supressor

PESD5V0F1BSF. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD2IVN-U. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

ESD protection for In-vehicle networks

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Ultra low capacitance ESD protection array

PESDxS1UL series. 1. Product profile. ESD protection diodes in a SOD882 package. 1.1 General description. 1.2 Features. 1.

100BASE-T1 / OPEN Allicance BroadR-Reach automotive Ethernet Low-Voltage Differential Signaling (LVDS) automotive USB 2.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

CAN bus ESD protection diode

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

100BASE-T1 / OPEN Alliance BroadR-Reach automotive Ethernet Low-Voltage Differential Signaling (LVDS) automotive USB 2.

ESD protection for In-vehicle network lines in automotive enviroments CAN LIN FlexRay SENT

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

ESD protection for In-vehicle network lines in automotive enviroments CAN LIN FlexRay SENT

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PTVS12VZ1USK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PTVS5V0Z1USKP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 5. Pinning information

BAT54W series. 1. Product profile. 2. Pinning information. Schottky barrier diodes. 1.1 General description. 1.2 Features and benefits

PESD5V0V2BM. Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESDxV4UG series. 1. Product profile. Very low capacitance quadruple ESD protection diode arrays in SOT353 package. 1.1 General description

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Single Schottky barrier diode

High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

High-speed switching diodes. Type number Package Configuration Package Nexperia JEITA JEDEC

High-speed switching in e.g. surface-mounted circuits

RB521CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD3V3C1BSF. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

RB520CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAV102; BAV103. Single general-purpose switching diodes

BAV756S; BAW56 series

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current T j = 25 C V RRM

BAS32L. 1. Product profile. High-speed switching diode. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current [1] ma V R reverse voltage V V RRM

PMEG4010ETP. 40 V, 1 A low VF MEGA Schottky barrier rectifier. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply

BAV70SRA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA V P ZSM. non-repetitive peak reverse power dissipation

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAV99QA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG4010ER. 1. Product profile. 1 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAS21GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG100V060ELPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG100V080ELPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

High-speed switching diodes. Table 1. Product overview Type number Package Package Configuration Nexperia JEITA JEDEC

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Two tolerance series: ± 2 % and ± 5 % AEC-Q101 qualified

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Single Zener diodes in a SOD123 package

20 V, 800 ma dual N-channel Trench MOSFET

60 / 50 V, 330 / 170 ma N/P-channel Trench MOSFET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Transcription:

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PESD3V3V4UK; PESD5V0V4UK; PESD9V0V4UK Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. 1 25 August 2010 Product data sheet 1. Product profile 1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package designed to protect up to four unidirectional signal lines from the damage caused by ESD and other transients. 1.2 Features and benefits ESD protection of up to four lines Very low leakage current: I RM =0.1μA Very low diode capacitance ESD protection up to 15 kv Max. peak pulse power: P PP =28W IEC 61000-4-2; level 4 (ESD) Low clamping voltage: V CL =9.5V IEC 61000-4-5 (surge); I PP =2.7A AEC-Q101 qualified 1.3 Applications Computers and peripherals Communication systems Audio and video equipment Portable electronics Cellular handsets and accessories Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode V RWM reverse standoff voltage PESD3V3V4UK - - 3.3 V PESD5V0V4UK - - 5.0 V PESD9V0V4UK - - 9.0 V

2. Pinning information Table 1. Quick reference data continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit C d diode capacitance f = 1 MHz; V R =0V PESD3V3V4UK - 13 17 pf PESD5V0V4UK - 12 15 pf PESD9V0V4UK - 6.5 10 pf Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode (diode 1) 2 common anode 1 2 3 1 3 cathode (diode 2) 4 cathode (diode 3) 5 not connected 6 cathode (diode 4) 6 5 4 bottom view 2 3 006aab474 6 5 4 3. Ordering information 4. Marking Table 3. Ordering information Type number Package Name Description Version PESD3V3V4UK - plastic extremely thin small outline package; SOT891 PESD5V0V4UK PESD9V0V4UK no leads; 6 terminals; body 1 1 0.5 mm Table 4. Marking codes Type number PESD3V3V4UK PESD5V0V4UK PESD9V0V4UK Marking code P1 P2 P3 Product data sheet Rev. 1 25 August 2010 2 of 15

5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode P PP peak pulse power t p =8/20μs [1][2] - PESD3V3V4UK - 25 W PESD5V0V4UK PESD9V0V4UK - 28 W I PP peak pulse current t p =8/20μs [1][2] - PESD3V3V4UK - 2.7 A PESD5V0V4UK - 2.5 A PESD9V0V4UK - 1.5 A Per device T j junction temperature - 150 C T amb ambient temperature 55 +150 C T stg storage temperature 65 +150 C [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4, or 6 to pin 2. Table 6. ESD maximum ratings T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Max Unit Per diode V ESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2] PESD3V3V4UK - 10 kv PESD5V0V4UK - 15 kv PESD9V0V4UK - 8 kv machine model [2] - 400 V MIL-STD-883 (human body model) - 8 kv [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4 or 6 to pin 2. Table 7. ESD standards compliance Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) Conditions > 15 kv (air); > 8 kv (contact) > 4 kv Product data sheet Rev. 1 25 August 2010 3 of 15

001aaa631 120 001aaa630 I PP 100 % I PP (%) 100 % I PP ; 8 μs 90 % 80 e t 50 % I PP ; 20 μs 40 10 % 0 0 10 20 30 40 t (μs) t r = 0.7 ns to 1 ns 30 ns 60 ns t Fig 1. 8/20 μs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 Product data sheet Rev. 1 25 August 2010 4 of 15

6. Characteristics Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode V RWM reverse standoff voltage PESD3V3V4UK - - 3.3 V PESD5V0V4UK - - 5.0 V PESD9V0V4UK - - 9.0 V I RM reverse leakage current PESD3V3V4UK V RWM = 3.3 V - 0.13 1 μa PESD5V0V4UK V RWM = 5.0 V - 0.05 0.3 μa PESD9V0V4UK V RWM = 9.0 V - 0.003 0.1 μa V BR breakdown voltage I R =1mA PESD3V3V4UK 5.3 5.6 5.9 V PESD5V0V4UK 6.47 6.8 7.14 V PESD9V0V4UK 11.4 12 12.7 V C d diode capacitance f = 1 MHz; V R =0V PESD3V3V4UK - 13 17 pf PESD5V0V4UK - 12.5 15 pf PESD9V0V4UK - 6.5 10 pf V CL clamping voltage [1][2] PESD3V3V4UK I PP =2.6A - - 9.5 V PESD5V0V4UK I PP =2.4A - - 10 V PESD9V0V4UK I PP =1.5A - - 19 V r dif differential resistance I R =5mA PESD3V3V4UK - 5 16 Ω PESD5V0V4UK - 2.5 8 Ω PESD9V0V4UK - 10 30 Ω [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4 or 6 to pin 2. Product data sheet Rev. 1 25 August 2010 5 of 15

10 2 006aac379 10 2 006aac380 P PP (W) P PP (W) 10 10 1 1 10 10 2 10 3 10 4 t p (μs) 1 1 10 10 2 10 3 t p (μs) T amb =25 C (1) PESD3V3V4UK (2) PESD5V0V4UK Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. T amb =25 C (1) PESD9V0V4UK Peak pulse power as a function of exponential pulse duration; typical values 1.2 001aaa633 P PP P PP(25 C) 0.8 0.4 0 0 50 100 150 200 T j ( C) Fig 5. Relative variation of peak pulse power as a function of junction temperature; typical values Product data sheet Rev. 1 25 August 2010 6 of 15

16.0 006aac381 10 006aac382 C d (pf) I RM 12.0 I RM(25 C) (3) (2) (1) (1) 8.0 (2) 1 (1) (2) 4.0 (3) (3) 0.0 0.0 2.0 4.0 6.0 8.0 10.0 V R (V) 10 1 75 25 0 25 50 75 T j ( C) f=1mhz; T amb =25 C (1) PESD3V3V4UK (2) PESD5V0V4UK (3) PESD9V0V4UK Fig 6. Diode capacitance as a function of reverse voltage; typical values Fig 7. (1) PESD3V3V4UK (2) PESD5V0V4UK (3) PESD9V0V4UK Relative variation of reverse leakage current as a function of junction temperature; typical values I V CL V BR V RWM I RM I R V + P-N I PP 006aaa407 Fig 8. V-I characteristics for a unidirectional ESD protection diode Product data sheet Rev. 1 25 August 2010 7 of 15

ESD TESTER CZ RZ 450 Ω RG 223/U 50 Ω coax 10 ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω IEC 61000-4-2 network C Z = 150 pf; R Z = 330 Ω DUT (DEVICE UNDER TEST) vertical scale = 2 kv/div horizontal scale = 15 ns/div vertical scale = 40 V/div horizontal scale = 50 ns/div PESD3V3V4UK GND GND PESD5V0V4UK GND GND PESD9V0V4UK unclamped +8 kv ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kv ESD pulse waveform (IEC 61000-4-2 network) GND vertical scale = 2 kv/div horizontal scale = 15 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND unclamped 8 kv ESD pulse waveform (IEC 61000-4-2 network) clamped 8 kv ESD pulse waveform (IEC 61000-4-2 network) 006aac383 Fig 9. ESD clamping test setup and waveforms Product data sheet Rev. 1 25 August 2010 8 of 15

7. Application information The is designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD3V3V4UK and the PESD5V0V4UK provide a surge capability of 25 W per line and the PESD9V0V4UK provides a surge capability of 28 W per line for an 8/20 μs waveform. data lines PESDxV4UK PESDxV4UK 1 6 1 6 2 3 5 n.c. n.c. 2 5 n.c. 4 3 4 unidirectional protection of 4 lines bidirectional protection of 3 lines 006aac384 Fig 10. Application diagram 8. Test information Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. Product data sheet Rev. 1 25 August 2010 9 of 15

9. Package outline 1.05 0.95 0.55 0.5 max 0.04 max 3 4 0.35 1.05 0.95 0.35 2 5 0.20 0.12 1 6 0.40 0.32 Dimensions in mm 0.35 0.27 07-05-15 Fig 11. Package outline SOT891 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description Packing quantity 5000 PESD3V3V4UK SOT891 4 mm pitch, 8 mm tape and reel; T4 [2] -132 PESD5V0V4UK PESD9V0V4UK [1] For further information and the availability of packing methods, see Section 14. [2] T4: 90 rotated reverse taping Product data sheet Rev. 1 25 August 2010 10 of 15

11. Soldering 1.05 0.5 (6 ) 0.6 (6 ) solder resist 1.4 0.7 solder land plus solder paste occupied area Dimensions in mm 0.15 (6 ) 0.25 (6 ) 0.35 sot891_fr Fig 12. Reflow soldering is the only recommended soldering method. Reflow soldering footprint SOT891 Product data sheet Rev. 1 25 August 2010 11 of 15

12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXV4UK_SER v.1 20100825 Product data sheet - - Product data sheet Rev. 1 25 August 2010 12 of 15

13. Legal information 13.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Product data sheet Rev. 1 25 August 2010 13 of 15

Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Product data sheet Rev. 1 25 August 2010 14 of 15

15. Contents 1 Product profile.......................... 1 1.1 General description..................... 1 1.2 Features and benefits.................... 1 1.3 Applications........................... 1 1.4 Quick reference data.................... 1 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Characteristics.......................... 5 7 Application information................... 9 8 Test information......................... 9 8.1 Quality information...................... 9 9 Package outline........................ 10 10 Packing information.................... 10 11 Soldering............................. 11 12 Revision history........................ 12 13 Legal information....................... 13 13.1 Data sheet status...................... 13 13.2 Definitions............................ 13 13.3 Disclaimers........................... 13 13.4 Trademarks........................... 14 14 Contact information..................... 14 15 Contents.............................. 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 August 2010 Document identifier: PESDXV4UK_SER