TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers. Low noise : NF = 4dB (typ.) R G = 100 Ω, V CE = 6 V, I C = 100 μa, f = 1 khz : NF = 0.5dB (typ.) R G = 1 kω, V CE = 6 V, I C = 100 μa, f = 1 khz Low pulse noise: Low 1/f noise High DC current gain: h FE = 200~700 High breakdown voltage: V CEO = 120 V Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 120 V Collector-emitter voltage V CEO 120 V Emitter-base voltage V EBO 5 V Collector current I C 100 ma Base current I B 20 ma Collector power dissipation P C 300 mw Junction temperature T j 125 C Storage temperature range T stg 55~125 C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1

Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 120 V, I E = 0 0.1 μa Emitter cut-off current I EBO V EB = 5 V, I C = 0 0.1 μa Collector-emitter breakdown voltage V (BR) CEO I C = 1 ma, I B = 0 120 V DC current gain h FE (Note) V CE = 6 V, I C = 2 ma 200 700 Collector-emitter saturation voltage V CE (sat) I C = 10 ma, I B = 1 ma 0.3 V Base-emitter voltage V BE V CE = 6 V, I C = 2 ma 0.65 V Transition frequency f T V CE = 6 V, I C = 1 ma 100 MHz Collector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 3.0 pf V CE = 6 V, I C = 0.1 ma, f = 10 Hz, R G = 10 kω 6 Noise figure NF V CE = 6 V, I C = 0.1 ma, f = 1 khz, R G = 10 kω 2 db V CE = 6 V, I C = 0.1 ma, f = 1 khz, R G = 100 Ω 4 Note: h FE classification GR: 200~400, BL: 350~700 2

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