STB160N75F3 STP160N75F3 - STW160N75F3

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Transcription:

STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3 75V 4 mω 120 A (1) TO-220 1 2 3 TO-247 1 2 3 STW160N75F3 75V 4 mω 120 A (1) 1. Current limited by package Ultra low on-resistance 100% Avalanche tested 1 D²PAK 3 Application Switching applications Description This N-channel enhancement mode Power MOSFET is the latest refinement of ST s STripFET process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking Package Packaging STB160N75F3 160N75F3 D²PAK Tape & reel STP160N75F3 160N75F3 TO-220 Tube STW160N75F3 160N75F3 TO-247 Tube October 2007 Rev 2 1/16 www.st.com 16

Contents STB160N75F3 - STP160N75F3 - STW160N75F3 Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................. 6 3 Test circuit................................................ 9 4 Package mechanical data.................................... 10 5 Packaging mechanical data.................................. 14 6 Revision history........................................... 15 2/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 75 V V GS Gate-source voltage ± 20 V I D (1) Drain current (continuous) at T C = 25 C 120 A I D (1) Drain current (continuous) at T C = 100 C 120 A I DM (2) Drain current (pulsed) 480 A P TOT Total dissipation at T C = 25 C 330 W Derating factor 2.2 W/ C dv/dt (3) E AS (4) Peak diode recovery voltage slope 20 V/ns Single pulse avalanche energy 600 mj T j T stg Operating junction temperature Storage temperature -55 to 175 C 1. Current limited by package 2. Pulse width limited by safe operating area 3. I SD < 120A, di/dt < 1100 A/µs, V DD < 60V, T J < T JMAX 4. Starting TJ = 25 C, I D = 60A, V DD = 25V Table 3. Thermal resistance Symbol Parameter Value TO-220 TO-247 D²PAK Unit Rthj-case Thermal resistance junction-case max 0.45 C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 -- C/W Rthj-pcb (1) Thermal resistance junction-pcb -- -- 50 C/W T l Maximum lead temperature for soldering purpose 300 C 1. When mounted on 1 inch² FR4 2 oz Cu 3/16

Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max Unit V (BR)DSS Drain-source breakdown voltage I D = 250µA, V GS = 0 75 V I DSS Zero gate voltage drain current (V GS = 0) V DS = Max rating, V DS = Max rating,@125 C 10 100 µa µa I GSS Gate body leakage current (V DS = 0) V GS = ±20V ±200 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250µA 2 4 V R DS(on) Static drain-source on resistance V GS = 10V, I D = 60A TO-220 TO-247 D²PAK 3.5 3.2 4 3.7 mω mω Table 5. Dynamic Symbol Parameter Test conditions Min Typ Max Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS =25V, f=1 MHz, V GS =0 6750 1080 40 pf pf pf Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD =37.5V, I D = 120A V GS =10V (see Figure 16) 85 27 26 nc nc nc 4/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD =37.5 V, I D = 60A, R G =4.7Ω, V GS =10V, (see Figure 18) 22 65 100 15 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I (1) SDM Source-drain current Source-drain current (pulsed) 120 480 A A V SD (2) Forward on voltage I SD =120A, V GS =0 1.5 V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD =120A, V DD = 20 V, di/dt = 100 A/µs, Tj=25 C (see Figure 17) 70 150 4.2 ns nc A 1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/16

Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / TO-247 Figure 3. Thermal impedance for TO-220 / TO-247 Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics Figure 8. Normalized BV DSS vs temperature Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16

Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 Figure 14. Source-drain diode forward characteristics 8/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Test circuit 3 Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16

Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data TO-220 mechanical data Dim mm inch Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/16

Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øp 3.55 3.65 0.140 0.143 ør 4.50 5.50 0.177 0.216 S 5.50 0.216 12/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data D²PAK mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.50 0.55 L3 1.4 1.75 0.055 0.68 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0 4 13/16

Packaging mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type BASE QTY BULK QTY 1000 1000 14/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Revision history 6 Revision history Table 8. Document revision history Date Revision Changes 07-Feb-2007 1 First release 02-Oct-2007 2 New section has been added: Electrical characteristics (curves) 15/16

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