v.117 HMC Typical Applications Features The HMC is ideal for: Millimeterwave Point-to-Point Radios LMDS VSAT SATCOM Functional Diagram Excellent Noise Figure: db Gain: db Single Supply: +V @ 8 ma Small Size:.8 x 1. x.1 mm General Description The HMC chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of to GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (.9 mm) size. The chip utilizes a GaAs PHEMT process offering db gain from a single bias supply of + V @ 8 ma with a noise figure of. db. All data is with the chip in a ohm test fixture connected via.7 mm ( mil) diameter ribbon bonds of minimal length.1 mm (<1 mils). The HMC may be used in conjunction with HMC or HMC mixers to realize a millimeterwave system receiver. Electrical Specifications, T A = + C, Vdd = +V Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range - 7 7 - - GHz Gain 18 17 db Gain Variation Over Temperature...... db/ C Noise Figure.....1. db Input Return Loss 7 1 7 1 7 1 db Output Return Loss 7 1 9 1 8 11 db Output Power for 1 db Compression (P1dB) -1 1 8 dbm Saturated Output Power (Psat) 1 7 1 dbm Output Third Order Intercept (IP) 1 7 1 11 17 dbm Supply Current (Idd) (@ Vdd = +.V) 8 77 8 77 8 77 ma Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 91, Norwood, MA -91 Phone: 781-9-7 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
HMC v.117 Gain vs. Temperature @ Vdd = +V Gain vs. Temperature @ Vdd = +V GAIN (db) 1 1 Return Loss @ Vdd = +V Return Loss @ Vdd = +V RETURN LOSS (db) - -1-1 - - S11 S GAIN (db) RETURN LOSS (db) 1 - -1-1 - - 1 S11 S - - Noise Figure vs. Temperature @ Vdd = +V Noise Figure vs. Temperature @ Vdd = +V NOISE FIGURE (db) NOISE FIGURE (db) 1 1 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 91, Norwood, MA -91 Phone: 781-9-7 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
HMC v.117 Gain & Noise Figure vs. Supply Voltage @ GHz. Isolation GAIN (db) Output P1dB @ Vdd = +V Output P1dB @ Vdd = +V P1dB (dbm) 1. 1. 19. 19 1.7.... 1 1 1 8 - Vdd SUPPLY VOLTAGE (Vdc) -.7.. NF (db) ISOLATION (db) P1dB (dbm) -1 - - - - - -7 1 1 1 8 - - V V - Output IP @ Vdd = +V Output IP @ Vdd = +V IP (dbm) 1 1 IP (dbm) 1 1 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 91, Norwood, MA -91 Phone: 781-9-7 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
Additive Phase Noise Vs Offset Frequency, RF Frequency = GHz, RF Input Power = -1 dbm (P1dB) -7 HMC v.117 PHASE NOISE (dbc/hz) -8-9 -1-11 -1-1 -1-1 -1-17 1 1K 1K 1K 1M OFFSET FREQUENCY (Hz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 91, Norwood, MA -91 Phone: 781-9-7 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
HMC v.117 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd) +. Vdc RF Input Power (RFIN)(Vdd = + Vdc) Outline Drawing - dbm Channel Temperature 17 C Continuous Pdiss (T = 8 C) (derate 7.9 mw/ C above 8 C) Thermal Resistance (channel to die bottom).9 W 1 C/W Storage Temperature - to +1 C Operating Temperature - to +8 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Information [1] Standard Alternate GP- (Gel Pack) [] [1] Refer to the Packaging Information section for die packaging dimensions. [] For alternate packaging information contact Analog Devices Inc. NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS). ALL TOLERANCES ARE ±.1 (.). DIE THICKNESS IS. (.1) BACKSIDE IS GROUND. BOND PADS ARE. (.1) SQUARE. BOND PAD SPACING, CTR-CTR:. (.1). BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 91, Norwood, MA -91 Phone: 781-9-7 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
HMC v.117 Pad Description Pad Number Function Description Interface Schematic 1 RFIN This pad is AC coupled and matched to Ohm., Vdd1, Vdd Power supply for the -stage amplifier. An external RF bypass capacitor of 1 - pf is required. The bond length to the capacitor should be as short as possible. The ground side of the capacitor should be connected to the housing ground. RFOUT This pad is AC coupled and matched to Ohm. Assembly Diagrams 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 91, Norwood, MA -91 Phone: 781-9-7 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
HMC v.117 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Ohm Microstrip transmission lines on.17mm ( mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If.mm (1 mil) thick alumina thin film substrates must be used, the die should be raised.1mm ( mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.1mm ( mil) thick die to a.1mm ( mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure ). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.7mm to.1 mm ( to mils). An RF bypass capacitor should be used on the Vdd input. A 1pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than.7mm ( Mils) from the chip is recommended. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up..1mm (. ) Thick GaAs MMIC.7mm (. ) Ribbon Bond RF Ground Plane.17mm (. ) Thick Alumina Thin Film Substrate Figure 1..1mm (. ) Thick GaAs MMIC.7mm (. ).1mm (. ) Thick Moly Tab Ribbon Bond RF Ground Plane.mm (.1 ) Thick Alumina Thin Film Substrate Figure. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/ gold tin preform is recommended with a work surface temperature of C and a tool temperature of C. When hot 9/1 nitrogen/hydrogen gas is applied, tool tip temperature should be 9 C. DO NOT expose the chip to a temperature greater than C for more than seconds. No more than seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding Ball or wedge bond with.mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports).7mm x.1mm ( mil x. mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 1 C and a ball bonding force of to grams or wedge bonding force of 18 to grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.1mm (1 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 91, Norwood, MA -91 Phone: 781-9-7 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 8