Dual N-Channel.V Specified PowerTrench MOSFET July 3 General Description These N-Channel.V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (.V V). Applications Features 6. A, V. R DS(ON) = 3 mω @ V GS =. V R DS(ON) = 3 mω @ V GS =. V. Optimized for use in battery protection circuits Low gate charge Battery protection Load switch Power management 6 7 8 Q Q 3 Absolute Maximum Ratings TA= o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± I D Drain Current Continuous (Note a) 6. A P D Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note a).6 (Note b) (Note c).9 T J, T STG Operating and Storage Junction Temperature Range to + C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 mm units W 3 Fairchild Semiconductor Corp. Rev E (W)
Electrical Characteristics T A = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = µa V BVDSS Breakdown Voltage Temperature I T J Coefficient D = µa, Referenced to C mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSS Gate Body Leakage V GS = ±8 V, V DS = V ± na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = µa.6. V VGS(th) T J R DS(on) Gate Threshold Voltage Temperature Coefficient Static Drain Source On Resistance I D = µa, Referenced to C V GS =. V, I D = 6. A V GS =. V, I D =. A V GS =. V, I D =6.A, T J= C 3 mv/ C I D(on) On State Drain Current V GS =. V, V DS = V A g FS Forward Transconductance V DS = V, I D = 6. A S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, 6 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance 3 3 3 3 mω 8 pf R G Gate Resistance V GS = mv, f =. MHz. Ω Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = V, I D = A, 8 6 ns t r Turn On Rise Time V GS =. V, R GEN = 6 Ω 9 7 ns t d(off) Turn Off Delay Time 6 ns t f Turn Off Fall Time 9 ns Q g Total Gate Charge V DS = V, I D = 3 A, 6. 9 nc Q gs Gate Source Charge V GS =. V. nc Q gd Gate Drain Charge.7 nc Drain Source Diode Characteristics and Maximum Ratings V SD Drain Source Diode Forward Voltage V GS = V, I S =.3 A (Note ).73.3 V t rr Diode Reverse Recovery Time I F = 6. A, d if/d t = A/µs ns Q rr Diode Reverse Recovery Charge nc Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 78 /W when mounted on a.in pad of oz copper b) /W when mounted on a. in pad of oz copper c) 3 /W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, Duty Cycle <.% Rev E (W)
Typical Characteristics V GS =.V.V 6 3. 3.V 8.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE...8.6.. V GS =.V.V 3.V 3.V.V.V.. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics..8 I D, DIRAIN CURRENT (A) Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6...8 I D = 6.A V GS =.V R DS(ON), ON-RESISTANCE (OHM)..9.7..3 T A = o C T A = o C I D = 3.A.6 - - 7 T J, JUNCTION TEMPERATURE ( o C) Figure 3. On-Resistance Variation with Temperature.. 3 V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Gate-to-Source Voltage. V DS = V T A = - o C o C o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = o C o C - o C.. 3 V GS, GATE TO SOURCE VOLTAGE (V)....6.8. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev E (W)
Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I D = 3 A V DS = V V V 3 3 6 7 8 Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. CAPACITANCE (pf) 8 6 C rss C oss C iss V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V Figure 8. Capacitance Characteristics.. R DS(ON) LIMIT V GS =.V R θja = 3 o C/W T A = o C ms ms ms s s DC... V DS, DRAIN-SOURCE VOLTAGE (V) µs P(pk), PEAK TRANSIENT POWER (W) 3 R θja = 3 C/W T A = C... t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =........... t, TIME (sec) R θja (t) = r(t) * R θja R θja = 3 o C/W P(pk) t t T J - T A = P * R θja (t) Duty Cycle, D = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev E (W)
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