BB Product profile. 2. Pinning information. 3. Ordering information. FM variable capacitance double diode. 1.1 General description

Similar documents
VHF variable capacitance diode

Planar PIN diode in a SOD523 ultra small SMD plastic package.

Four planar PIN diode array in SOT363 small SMD plastic package.

BAP Product profile. 2. Pinning information. 3. Ordering information. Silicon PIN diode. 1.1 General description. 1.2 Features and benefits

Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.

Two elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified

NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

Planar PIN diode in a SOD523 ultra small plastic SMD package.

NPN 9 GHz wideband transistor. The transistor is encapsulated in a plastic SOT23 envelope.

BF861A; BF861B; BF861C

High-speed switching in e.g. surface-mounted circuits

75 MHz, 30 db gain reverse amplifier

200 MHz, 35 db gain reverse amplifier. High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC).

DATA SHEET. BAP50-05 General purpose PIN diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Feb May 10.

BAT54W series. 1. Product profile. 2. Pinning information. Schottky barrier diodes. 1.1 General description. 1.2 Features and benefits

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA V P ZSM. non-repetitive peak reverse power dissipation

DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D102. BAP64-04W Silicon PIN diode Jan 29. Product specification Supersedes data of 2000 Jun 06

DISCRETE SEMICONDUCTORS DATA SHEET. BAP65-03 Silicon PIN diode. Product specification Supersedes data of 2001 May Feb 11

NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.

BAV102; BAV103. Single general-purpose switching diodes

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

BB Product profile. 2. Pinning information. 3. Ordering information. VHF variable capacitance diode. 1.1 General description. 1.

Single Schottky barrier diode

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

PNP 5 GHz wideband transistor. Oscilloscopes and spectrum analyzers Radar systems RF wideband amplifiers

BGA Product profile. MMIC amplifier. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NXPS20H100C. High junction temperature capability Low leakage current

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

Quad 2-input NAND buffer (open collector) The 74F38 provides four 2-input NAND functions with open-collector outputs.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Hex non-inverting precision Schmitt-trigger

UHF variable capacitance diode. Voltage Controlled Oscillators (VCO) Electronic tuning in UHF television tuners

Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Two tolerance series: ± 2 % and ± 5 % AEC-Q101 qualified

HEF4001B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NOR gate

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current [1] ma V R reverse voltage V V RRM

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

65 V, 100 ma NPN general-purpose transistors

PNP general-purpose double transistor. PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.

BAS32L. 1. Product profile. High-speed switching diode. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

PMEG4010ER. 1. Product profile. 1 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

RB520CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

HEF4002B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Dual 4-input NOR gate

BCP56H series. 80 V, 1 A NPN medium power transistors

Output rectifiers in high-frequency switched-mode power supplies

50 ma LED driver in SOT457

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAV756S; BAW56 series

BC817-25QA; BC817-40QA

NPN wideband silicon germanium RF transistor

Quad 2-input EXCLUSIVE-NOR gate

BAS116GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

High-speed switching diodes. Type number Package Configuration Package Nexperia JEITA JEDEC

RB521CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

BAV70SRA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Broadband LDMOS driver transistor. A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band.

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current T j = 25 C V RRM

80 V, 1 A NPN medium power transistors. Type number Package PNP complement Nexperia JEITA JEDEC BCP56T SOT223 SC-73 - BCP53T

Dual P-channel intermediate level FET

BYV34X Product profile. 2. Pinning information. Dual rectifier diode ultrafast. 1.1 General description. 1.2 Features. 1.

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17W NPN 1 GHz wideband transistor. Product specification Supersedes data of November 1992.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PEMD48; PUMD48. NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω

BAS21GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Hex non-inverting HIGH-to-LOW level shifter

Quad 2-input EXCLUSIVE-NOR gate

PMEG4010ETP. 40 V, 1 A low VF MEGA Schottky barrier rectifier. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply

1-of-4 decoder/demultiplexer

PTVS5V0Z1USKP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 5. Pinning information

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.

PDTC143Z series. NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Single Zener diodes in a SOD123 package

PTVS12VZ1USK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

PESD3V3S1UB. 1. General description. 2. Features and benefits. 3. Application information. 4. Quick reference data

30 V, 0.1 A low VF MEGA Schottky barrier rectifier. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F(AV)

DISCRETE SEMICONDUCTORS DATA SHEET. BF510 to 513 N-channel silicon field-effect transistors

Quad 2-input EXCLUSIVE-NOR gate

DISCRETE SEMICONDUCTORS DATA SHEET. BFT46 N-channel silicon FET

PMEG2005EGW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Hex inverting HIGH-to-LOW level shifter

NPN 25 GHz wideband transistor

Single Zener diodes in a SOD123 package

LOCMOS (Local Oxidation CMOS) to DTL/TTL converter HIGH sink current for driving two TTL loads HIGH-to-LOW level logic conversion

PMEG4050ETP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PESD5V0S2BT. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PDTB1xxxT series. 500 ma, 50 V PNP resistor-equipped transistors

Quad 2-input NAND Schmitt trigger

Transcription:

SOT23 Rev. 3 7 September 2011 Product data sheet 1. Product profile 1.1 General description The is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology, and encapsulated in the SOT23 small plastic SMD package. 1.2 Features and benefits Excellent linearity C d(1v) : 81 pf; C d(7.5v) : 27.6 pf C d(1v) to C d(7.5v) ratio: min. 2.6 Very low series resistance Small plastic SMD package. 1.3 Applications Electronic tuning in FM-radio. 2. Pinning information Table 1. Discrete pinning Pin Description Simplified outline Symbol 1 anode 1 2 anode 2 3 3 common cathode 1 2 1 3 2 sym032 3. Ordering information Table 2. Ordering information Type number Package Name Description Version - plastic surface mounted package; 3 leads SOT23

4. Marking Table 3. 5. Limiting values Marking Type number Marking code [1] *13 [1] * = p: made in Hong Kong. * = w: made in China. 6. Characteristics Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V R continuous reverse voltage - 15 V I F continuous forward current - 20 ma T stg storage temperature 55 +150 C T j junction temperature 55 +125 C Table 5. Electrical Characteristics T j = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode I R reverse current V R =15V; see Figure 2 10 na V R =15V; T j =85 C; see Figure 2 200 na r s diode series resistance f = 100 MHz; V R =3V 0.2 0.4 C d diode capacitance V R = 1 V; f = 1 MHz; see Figure 1 76 81 86 pf V R = 3 V; f = 1 MHz; see Figure 1 50.5 pf V R = 7.5 V; f = 1 MHz; see Figure 1 25.5 27.6 29.7 pf V R = 8 V; f = 1 MHz; see Figure 1 26.3 pf C d1v C d 7.5V ------------------ capacitance ratio f = 1 MHz 2.6 3.3 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 2 of 8

100 001aaa620 C d (pf) 80 60 40 20 0 10 1 1 10 10 2 V R (V) Fig 1. f=1mhz; T j =25 C. Diode capacitance as a function of reverse voltage; typical values. 10 3 001aaa621 10 2 001aaa622 I R (na) TC d (K -1 ) 10 2 10 3 10 10 4 1 0 20 40 60 80 100 T j ( C) 10 5 10 1 1 10 10 2 V R (V) Fig 2. Reverse current as a function of junction temperature; maximum values. Fig 3. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 3 of 8

7. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 1 1 2 c e 1 b p w M B L p e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max. mm 1.1 0.9 0.1 b p c D E e e 1 H E L p Q v w 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 4. Package outline. All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 4 of 8

8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes v.3 20110907 Product data sheet - v.2 Modifications: v.2 (9397 750 13003) _N v.1 (9397 750 12695) The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. 20040427 Product data - _N v.1 20031117 Preliminary data - - All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 5 of 8

9. Legal information 9.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 6 of 8

Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 7 of 8

11. Contents 1 Product profile.......................... 1 1.1 General description..................... 1 1.2 Features and benefits.................... 1 1.3 Applications........................... 1 2 Pinning information...................... 1 3 Ordering information..................... 1 4 Marking................................ 2 5 Limiting values.......................... 2 6 Characteristics.......................... 2 7 Package outline......................... 4 8 Revision history......................... 5 9 Legal information........................ 6 9.1 Data sheet status....................... 6 9.2 Definitions............................. 6 9.3 Disclaimers............................ 6 9.4 Trademarks............................ 7 10 Contact information...................... 7 11 Contents............................... 8 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 September 2011 Document identifier: