Two Stage Amplifier Design

Similar documents
Lab 4. Transistor as an amplifier, part 2

ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB

BJT Circuits (MCQs of Moderate Complexity)

dc Bias Point Calculations

Homework Assignment 12

ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source

(a) BJT-OPERATING MODES & CONFIGURATIONS

CHAPTER.4 :TRANSISTOR FREQUENCY RESPONSE

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Week 12: Output Stages, Frequency Response

Last time: BJT CE and CB amplifiers biased by current source

Small signal ac equivalent circuit of BJT

Exam Model Answer. Question 1 (15 marks) Answer this question in the form of table. Choose the correct answer (only one answer is accepted).

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

Physics of Bipolar Transistor

V A ( ) 2 = A. For Vbe = 0.4V: Ic = 7.34 * 10-8 A. For Vbe = 0.5V: Ic = 3.49 * 10-6 A. For Vbe = 0.6V: Ic = 1.

Frequency Response of Common Emitter Amplifier

By: Dr. Ahmed ElShafee

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

Electronic Circuits EE359A


Module-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A

EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS

Electrical, Electronic and Digital Principles (EEDP) Lecture 5. CE Amplifier, Coupling, and Multistage Amplifiers باسم ممدوح الحلوانى

7. Bipolar Junction Transistor

UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS

INSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMUS) Dundigal, Hyderabad

EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 10/27/17

PHYS225 Lecture 6. Electronic Circuits

I C I E =I B = I C 1 V BE 0.7 V

Analog and Telecommunication Electronics

ECE 255, Discrete-Circuit Amplifiers

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

Lecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect.

ECE 3274 Common-Emitter Amplifier Project

Lab 2: Common Emitter Design: Part 2

Experiment 8 Frequency Response

E84 Lab 3: Transistor

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

Lecture 3: Transistors

ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project

EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 11/11/10

Part ILectures Bipolar Junction Transistors(BJTs) and Circuits

Bipolar Junction Transistors

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

Figure1: Basic BJT construction.

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

Course Roadmap Rectification Bipolar Junction Transistor

Lecture 18: Common Emitter Amplifier.

Mini Project 2 Single Transistor Amplifiers. ELEC 301 University of British Columbia

Chap. 4 BJT transistors

5.25Chapter V Problem Set

.dc Vcc Ib 0 50uA 5uA

Department of Electrical Engineering IIT Madras

Paper-1 (Circuit Analysis) UNIT-I

ECE 3274 Common-Emitter Amplifier Project

Frequency Responses and Active Filter Circuits

Single-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations

Electronic Troubleshooting. Chapter 5 Multistage Amplifiers

In a cascade configuration, the overall voltage and current gains are given by:

Chapter 6. BJT Amplifiers

Lecture (07) BJT Amplifiers 4 JFET (1)

The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.

DEPARTMENT OF ELECTRONICS AGH UST LABORATORY OF ELECTRONICS ELEMENTS SMALL-SIGNAL PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS REV. 1.

Experiment #8: Designing and Measuring a Common-Collector Amplifier

Determining BJT SPICE Parameters

ELG 2135 ELECTRONICS I FOURTH CHAPTER : BIPOLAR JUNCTION TRANSISTORS

Structured Electronic Design

EC2205 Electronic Circuits-1 UNIT III FREQUENCY RESPONSE OF AMPLIFIERS

Chapter Two "Bipolar Transistor Circuits"

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN

Carleton University ELEC Lab 1. L2 Friday 2:30 P.M. Student Number: Operation of a BJT. Author: Adam Heffernan

Electronic Troubleshooting

Code: 9A Answer any FIVE questions All questions carry equal marks *****

Lecture 21: Voltage/Current Buffer Freq Response

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

F7 Transistor Amplifiers

Lecture (04) BJT Amplifiers 1

Homework Assignment 05

ECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER

BJT Amplifier. Superposition principle (linear amplifier)

University of Minnesota. Department of Electrical and Computer Engineering. EE 3105 Laboratory Manual. A Second Laboratory Course in Electronics

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

Fundamentals of Microelectronics. Bipolar Amplifier

CHADALAWADA RAMANAMMA ENGINEERING COLLEGE (AUTONOMOUS) Chadalawada Nagar, Renigunta Road, Tirupati

THE UNIVERSITY OF HONG KONG. Department of Electrical and Electrical Engineering

Bipolar Junction Transistors (BJTs) Overview

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the

Lecture (06) BJT Amplifiers 3


Analog Electronics circuits

Skyup's Media ELECTRONIC CIRCUIT ANALYSIS

EXPERIMENT 1: LOW AND HIGH FREQUENCY REGION ANALYSIS OF BJT AMPLIFIERS

ST.ANNE S COLLEGE OF ENGINEERING AND TECHNOLOGY ANGUCHETTYPALAYAM, PANRUTI Department of Electronics & Communication Engineering OBSERVATION

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK

DESIGN & TESTING OF A RC COUPLED SINGLE STAGE BJT AMPLIFIER

Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers

FREQUENCY RESPONSE OF COMMON COLLECTOR AMPLIFIER

Transcription:

Two Stage Amplifier Design ENGI 242 ELEC 222 HYBRID MODEL PI January 2004 ENGI 242/ELEC 222 2 Multistage Amplifier Design 1

HYBRID MODEL PI PARAMETERS Parasitic Resistances rb = rb b = ohmic resistance voltage drop in base region caused by transverse flow of majority carriers, 50 rb 500 rc = rce = collector emitter resistance change in Ic due to change in Vc, 20 rc 500 rex = emitter lead resistance important if IC very large, 1 rex 3 January 2004 ENGI 242/ELEC 222 3 HYBRID MODEL PI PARAMETERS Parasitic Capacitances Cje0 = Base-emitter junction (depletion layer) capacitance, 0.1pF Cje0 1pF Cµ0 = Base-collector junction capacitance, 0.2pF Cµ0 1pF Ccs0 = Collector-substrate capacitance, 1pF Ccs0 3pF Cje = 2Cje0 (typical) ψ0 =.55V (typical) τf = Forward transit time of minority carriers, average of lifetime of holes and electrons, 0ps τf 530ps January 2004 ENGI 242/ELEC 222 4 Multistage Amplifier Design 2

HYBRID MODEL PI PARAMETERS rπ = rb e = dynamic emitter resistance magnitude varies to give correct low frequency value of Vb e for Ib rµ = rb c = collector base resistance accounts for change in recombination component of Ib due to change in Vc which causes a change in base storage cπ = Cb e = dynamic emitter capacitance due to Vb e stored charge cµ = Cb c = collector base transistion capacitance (CTC) plus Diffusion capacitance (Cd) due to base width modulation gmvπ = gmvb e = Ic equivalent current generator January 2004 ENGI 242/ELEC 222 5 Hybrid Pi Relationships g m = V T = g m = I C VT k T q = 26mV @ 300 K I C 26mV r π = (26mV) ( β) IC = β = gm rπ π c = g mvπ π i = β v r 26mV IB January 2004 ENGI 242/ELEC 222 6 Multistage Amplifier Design 3

Hybrid Pi Relationships January 2004 ENGI 242/ELEC 222 7 Design of a Two Stage Amplifier January 2004 ENGI 242/ELEC 222 8 Multistage Amplifier Design 4

Two Stage Amplifier Design Specifications Design a two stage common emitter amplifier with partial emitter bypass for the following specifications: VCC = 20V VE =.1VCC RE1A =.25RE1 VC1 =.6VCC IC1 = 2mA RE2A =.4RE2 VC2 =.55VCC IC2 = 2.5mA R2 =.1βRE1 R4 =.1βRE2 RL = 10kΩ fcl1 = 16Hz fcl2 = 13Hz fcl3 = 12Hz fcl4 = 67Hz fcl5 = 8Hz For both stages: β = 140 τcb = 150ps VA = 100V Cµ 8pF ft = 150MHz rb = 19Ω January 2004 ENGI 242/ELEC 222 9 Hybrid Pi Model January 2004 ENGI 242/ELEC 222 10 Multistage Amplifier Design 5

Low Critical Frequencies There is one low critical frequency for each coupling and bypass capacitor We start by determining the (Thevenin) impedance seen by each capacitor Then we construct a RC high pass filter (output across Z) We may then calculate the critical frequency by letting XC = Z and solving for either fcl or C f CL = 1 2 π Z C 1 C = 2 π f CL Z and fcl = fcl1 + fcl2 + fcl3 + fcl4 + fcl5 January 2004 ENGI 242/ELEC 222 11 Hybrid Pi Model Input First Stage Z IN1 = R 1//R 2// ( r b1 + r π1+ (β + 1)RE1A) January 2004 ENGI 242/ELEC 222 12 Multistage Amplifier Design 6

Hybrid Pi Model Output First Stage Z O1 = R C1// ( r O1 + RE1A) January 2004 ENGI 242/ELEC 222 13 Hybrid Pi Model Input Second Stage Z IN2 = R 3//R 4// [ r b2 + r π2+ (β + 1)RE2A] January 2004 ENGI 242/ELEC 222 14 Multistage Amplifier Design 7

Hybrid Pi Model Output Second Stage Z O2 = R C2// ( r O2 + RE2A) January 2004 ENGI 242/ELEC 222 15 Hybrid Pi Model Emitter Bypass First Stage ( ) R//R 1 2 + r b1+ rπ1 Z = R // R β + 1 TH_IN1 + E1A E1B January 2004 ENGI 242/ELEC 222 16 Multistage Amplifier Design 8

Hybrid Pi Model Emitter Bypass Second Stage [ R //R //R //(r + R ] 3 4 C1 o1 E1A) + r b2+ rπ2 Z = R // R β + 1 TH_IN2 + E2A E2B January 2004 ENGI 242/ELEC 222 17 fcl1 1 f CL1 = 2 π Z IN1 C 1 January 2004 ENGI 242/ELEC 222 18 Multistage Amplifier Design 9

fcl2 Determine the Thevenin Impedance seen by C2 f CL2 = 2 Z O1 + Z IN2 C 2 1 π ( ) January 2004 ENGI 242/ELEC 222 19 fcl3 Determine the Thevenin Impedance seen by C3 1 f CL3 = 2 Z O2 + R L C 3 π ( ) January 2004 ENGI 242/ELEC 222 20 Multistage Amplifier Design 10

fcl4 Determine the Thevenin Impedance seen by CE1 1 f CL4 = 2 Z TH_IN1 C 4 π ( ) January 2004 ENGI 242/ELEC 222 21 fcl5 Determine the Thevenin Impedance seen by CE2 1 f CL5 = 2 Z TH_IN2 C 5 π ( ) January 2004 ENGI 242/ELEC 222 22 Multistage Amplifier Design 11

Schematic of Design January 2004 ENGI 242/ELEC 222 23 Simulation Profile January 2004 ENGI 242/ELEC 222 24 Multistage Amplifier Design 12

Probe Plot Y Axis Settings January 2004 ENGI 242/ELEC 222 25 Probe Plot X Axis X Grid Settings January 2004 ENGI 242/ELEC 222 26 Multistage Amplifier Design 13

Frequency Response January 2004 ENGI 242/ELEC 222 27 Frequency Response January 2004 ENGI 242/ELEC 222 28 Multistage Amplifier Design 14