2SC353/KSC353 NPN Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : V CEO = 3V Low Reverse Transfer Capacitance : C re =.8pF at V CB = 3V Excellent Gain Linearity for low THD High Frequency: 5MHz Full thermal and electrical Spice models are available Complement to 2SA38/KSA38. Absolute Maximum Ratings* T a = 25 C unless otherwise noted March 28 TO-26. Emitter 2.Collector 3.Base Symbol Parameter Ratings Units BV CBO Collector-Base Voltage 3 V BV CEO Collector-Emitter Voltage 3 V BV EBO Emitter-Base Voltage 5 V I C Collector Current(DC) ma I CP Collector Current(Pulse) 2 ma P C Total Device Dissipation, T C =25 C T C =25 C 7.2 W W T J, T STG Junction and Storage Temperature - 55 ~ +5 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* T a =25 C unless otherwise noted Symbol Parameter Max. Units R θjc Thermal Resistance, Junction to Case 7.8 C/W * Device mounted on minimum pad size h FE Classification Classification C D E F h FE 4 ~ 8 6 ~ 2 ~ 2 6 ~ 32 2SC353/KSC353 Rev. A
Electrical Characteristics* T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage I C = µa, I E = 3 V BV CEO Collecto- Emitter Breakdown Voltage I C = ma, I B = 3 V BV EBO Emitter-Base Breakdown Voltage I E = µa, I C = 5 V I CBO Collector Cut-off Current V CB = 2V, I E =. µa I EBO Emitter Cut-off Current V EB = 4V, I C =. µa h FE DC Current Gain V CE = V, I C = ma 4 32 V CE (sat) Collector-Emitter Saturation Voltage I C = 2mA, I B = 2mA.6 V V BE (sat) Base-Emitter Saturation Voltage I C = 2mA, I B = 2mA V f T Current Gain Bandwidth Product V CE = 3V, I C = ma 5 MHz C ob Output Capacitance V CB = 3V, f = MHz 2.6 pf C re Reverse Transfer Capacitance V CB = 3V, f = MHz.8 pf * Pulse Test: Pulse Width 3µs, Duty Cycle 2% Ordering Information Part Number* Marking Package Packing Method Remarks 2SC353CSTU 2SC353C TO-26 TUBE hfe C grade 2SC353DSTU 2SC353D TO-26 TUBE hfe D grade 2SC353ESTU 2SC353E TO-26 TUBE hfe E grade 2SC353FSTU 2SC353F TO-26 TUBE hfe F grade KSC353CSTU C353C TO-26 TUBE hfe C grade KSC353DSTU C353D TO-26 TUBE hfe D grade KSC353ESTU C353E TO-26 TUBE hfe E grade KSC353FSTU C353F TO-26 TUBE hfe F grade *. Affix -S- means the standard TO26 Package.(see package dimensions). If the affix is -STS- instead of -S-, that mean the short-lead TO26 package. 2. Suffix -TU means the tube packing, The Suffix TU could be replaced to other suffix character as packing method. 2SC353/KSC353 Rev. A 2
Typical Characteristics hfe, DC CURRENT GAIN 2 6 2 8 4 IB = 2µA IB = µa IB = 8µA IB = 6µA IB = 4µA IB = 2µA IB = 2 4 6 8 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic VCE = V. VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 8 6 4 2 IB = 6µA IB = 5µA IB = 4µA IB = 3µA IB = 2µA IB = µa IB = 2 4 6 8. VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. Static Characteristic VBE(sat) VCE(sat) IC = IB.. Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 6 4 VCE = V f = MHz 2 8 6 4 2 Cob[pF], CAPACITANCE..2.4.6.8..2.. VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance 2SC353/KSC353 Rev. A 3
Typical Characteristics (Continued) Cre[pF], CAPACITANCE.. Figure 7. Reverse Transfer Capacitance VCB[V], COLLECTOR-BASE VOLTAGE IC MAX. (Pulse) IC MAX. DC (Ta = 25 o C) DC (Tc = 25 o C) 5µs ms ms f=mhz ft[mhz], CURRENT GAIN BANDWIDTH PRODUCT P C [W], POWER DISSIPATION VCE = 3V. Figure 8. Current Gain Gandwidth Product 8 7 6 5 4 3 2 T c =25 o C T C =25 o C 25 5 75 25 5 75 VCE[V], COLLECTOR-EMITTER VOLTAGE T[ o C], TEMPERATURE Figure 9. Safe Operating Area Figure. Power Derating 2SC353/KSC353 Rev. A 4
Package Dimensions 3.9 ±. ø3.2 ±..75 ±..6 ±..75 ±. 8. ±.3 TO-26 4.2MAX 3.6 ±.3. ±.2 6. ±.2 (.) 3.25 ±.2 (.5).75 ±.2 2.28TYP [2.28±.2] # 2.28TYP [2.28±.2].5 +..5 Dimensions in Millimeters 2SC353/KSC353 Rev. A 5
TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO i-lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power22 Power247 POWEREDGE Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX 2SC353/KSC353 NPN Epitaxial Silicon Transistor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 2SC353/KSC353 Rev. A 6 Rev. I3