PD-96973A RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMB57Z6 K Rads (Si).55Ω 45A* IRHMB53Z6 3K Rads (Si).55Ω 45A* IRHMB54Z6 6K Rads (Si).55Ω 45A* IRHMB58Z6 K Rads (Si).55Ω 45A* International Rectifier s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8 (MeV/(mg/cm 2 )). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Absolute Maximum Ratings Parameter ID @ VGS = 2V, TC = 25 C Continuous Drain Current 45* ID @ VGS = 2V, TC = C Continuous Drain Current 45* IDM Pulsed Drain Current 8 IRHMB57Z6 3V, N-CHANNEL 5 TECHNOLOGY Tabless Low-Ohmic TO-254AA Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-75, Method 2 PD @ TC = 25 C Max. Power Dissipation 28 W Units Linear Derating Factor.67 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy 25 mj IAR Avalanche Current 45 A EAR Repetitive Avalanche Energy 2.8 mj dv/dt Peak Diode Recovery dv/dt ƒ.8 V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range C Lead Temperature 3 (.63 in. /.6 mm from case for s) Weight 8. (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 6/4/5 A
IRHMB57Z6 Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 45* ISM Pulse Source Current (Body Diode) 8 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 45A, VGS = V trr Reverse Recovery Time 4 ns Tj = 25 C, IF = 45A, di/dt A/µs QRR Reverse Recovery Charge 35 µc VDD 25V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 3 V VGS = V, ID =.ma BVDSS/ TJ Temperature Coefficient of Breakdown.3 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State.55 Ω VGS = 2V, ID = 45A Resistance VGS(th) Gate Threshold Voltage 2. 4. V VDS = VGS, ID =.ma gfs Forward Transconductance 73 S VDS = 5V, IDS = 45A IDSS Zero Gate Voltage Drain Current VDS = 24V,VGS = V µa 25 VDS = 24V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward VGS = 2V na IGSS Gate-to-Source Leakage Reverse - VGS = -2V Qg Total Gate Charge 24 VGS =2V, ID = 45A Qgs Gate-to-Source Charge 6 nc VDS = 5V Qgd Gate-to-Drain ( Miller ) Charge 55 td(on) Turn-On Delay Time 35 VDD = 5V, ID = 45A tr Rise Time 75 VGS =2V, RG = 2.35Ω ns td(off) Turn-Off Delay Time 8 tf Fall Time 4 LS + LD Total Inductance 6.8 nh Measured from Drain lead (6mm /.25in. from package) to Source lead (6mm /.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance 8884 VGS = V, VDS = 25V Coss Output Capacitance 4334 pf f =.MHz Crss Reverse Transfer Capacitance 27 Rg Internal Gate Resistance.73 Ω f =.MHz, open drain Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case.6 RthCS Case-to-Sink.2 C/W RthJA Junction-to-Ambient 48 Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com
Radiation Characteristics IRHMB57Z6 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation Parameter Up to 6K Rads(Si) K Rads (Si) 2 Units Test Conditions Min Max Min Max BV DSS Drain-to-Source Breakdown Voltage 3 3 V V GS = V, I D =.ma VGS(th) Gate Threshold Voltage 2. 4..5 4. VGS = V DS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - - V GS = -2 V I DSS Zero Gate Voltage Drain Current 25 µa V DS = 24V, V GS = V R DS(on) Static Drain-to-Source.4.45 Ω VGS =2V, I D = 45A On-State Resistance (TO-3) R DS(on) Static Drain-to-Source On-State.55.6 Ω VGS =2V, I D = 45A Resistance (Low-Ohmic TO-254) V SD Diode Forward Voltage.2.2 V V GS = V, IS = 45A. Part numbers IRHMB57Z6, IRHMB53Z6 and IRHMB54Z6 2. Part number IRHMB58Z6 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = V -5V -V -5V -2V 38 ± 5% 3 ± 7.5% 38 ± 7.5% 3 3 3 22.5 5 6 ± 5% 33 ± 7.5% 3 ± % 25 25 2 5 7.5 84 ± 5% 35 ± % 28 ± 7.5% 25 25 2 - - Bias VDS (V) 35 3 25 2 5 5-5 - Bias VGS (V) -5-2 LET=38 ± 5% LET=6 ± 5% LET=84 ± 5% For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area www.irf.com 3
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRHMB57Z6 VGS TOP 5V 2V V 8.V 6.V 5.V 4.5V BOTTOM 4.V VGS TOP 5V 2V V 8.V 6.V 5.V 4.5V BOTTOM 4.V 4.V 4.V 6µs PULSE WIDTH Tj = 25 C.. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2. I D = 45A T J = 5 C.5 T J = 25 C..5 V DS = 5V 6µs PULSE 5 WIDTH 4 4.5 5 5.5 6 V GS, Gate-to-Source Voltage (V) V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRHMB57Z6 6 4 2 V KHz GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 6 I D = 45A V DS = 24V V DS = 5V C iss 2 8 C oss 6 8 4 2 C rss 4 FOR TEST CIRCUIT SEE FIGURE 3 4 8 2 6 2 24 28 32 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) µs T J = 5 C T J = 25 C ms ms V GS = V...4.8.2.6 V SD, Source-to-Drain Voltage (V) Tc = 25 C DC Tj = 5 C Single Pulse. V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5
I D, Drain Current (A) IRHMB57Z6 6 LIMITED BY PACKAGE V DS R D V GS D.U.T. 2 R G + - V DD V GS 8 Pulse Width µs Duty Factor. % 4 25 5 75 25 5 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V DS 9% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms D =.5 Thermal Response ( Z thjc )..2..5 P DM.2.. t SINGLE PULSE t 2 ( THERMAL RESPONSE ). Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com
IRHMB57Z6 V DS R G D.U.T I AS 2V V GS tp.ω 5V L DRIVER Fig 2a. Unclamped Inductive Test Circuit. + - V DD A E AS, Single Pulse Avalanche Energy (mj) 4 32 24 6 8 I D TOP 2.A 28.5A BOTTOM 45A 25 5 75 25 5 tp V (BR)DSS Starting T J, - Junction Temperature ( C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 5KΩ Q G 2V.2µF.3µF 2 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit www.irf.com 7
IRHMB57Z6 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25 C, L=. mh Peak IL = 45A, VGS = 2V ƒ ISD 45A, di/dt 5A/µs, VDD 3V, TJ 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. Case Outline and Dimensions Tabless - Low-Ohmic TO-254AA.3 [.5] A 3.84 [.545] 3.59 [.535] 6.6 [.26] 6.32 [.249] 3.84 [.545] 3.59 [.535] B 2 3 C 7.4 [.685].84 [.33] 2.95 [.5] MAX. 3.8 [.5] 2X 3X.4 [.45].89 [.35].36 [.4] B A 3.8 [.5] NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M-994. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: N. Sepulveda Blvd, El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 6/25 8 www.irf.com