High Speed Optocoupler, 10 MBd, SOIC-8 Package

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VOT, VOT, VOT, VOT, VOT, VOT High Speed Optocoupler, MBd, SOIC-8 Package 89- DESCRIPTION Single channel NC 8 A V E C V O NC GND VOT, VOT, VOT A C C A Dual channel 8 V O V O GND VOT, VOT, VOT 89- V D E The VOxxT family are single and dual channel MBd optocoupler utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-transister output, providing less leakage compared to an open collector Schottky clamped transister output. For the single channel type, an enable function on pin allows the detector to be strobed. The internal shield provides a guaranteed common mode transient immunity of kv/μs for the VOT and VOT and kv/μs for the VOT and VOT. The use of a. μf bypass capacitor connected between pin and 8 is recommended. FEATURES Choice of CMR performance of kv/μs, kv/μs, and kv/μs High speed: MBd typical + V CMOS compatibility Pure tin leads Guaranteed AC and DC performance over temperature: - C to + C temp. range Meets IEC 8-- (SO ) and IEC 8-- (H S) requirements Low input current capability: ma Material categorization: For definitions of compliance please see /doc?999 APPLICATIONS Microprocessor system M interface PLC, ATE input/output isolation Computer peripheral interface: SPI Digital fieldbus isolation: CC-Link, DeviceNet, profibus, SDS High speed A/D and D/A conversion AC plasma display panel level shifting Multiplexed data transmission Digital control power supply Ground loop elimination AGENCY APPROVALS UL, file no. E cul-file no. E, equivalent to CSA bulletin A DIN EN -- (VDE 88-), available with option ORDERING INFORMATION V O # # - X T SIOC-8 PART NUMBER PACKAGE OPTION TAPE AND REEL. mm AGENCY CHANNEL CHANNELS CERTIFIED/PACKAGE CMR (kv/μs) CMR (kv/μs) UL, cul SOIC-8 VOT VOT VOT VOT VOT VOT UL, cul, VDE SOIC-8 - VO-XT - - VO-XT - Rev.., -Oct- Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT TRUTH TABLE (positive logic) LED ENABLE () OUTPUT On H L Off H H On L H Off L H On NC L Off NC H Note () Only applicable for single channel devices ABSOLUTE MAXIMUM RATINGS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Average forward current (single channel) ma Average forward current (dual channel) ma Reverse input voltage V R V Enable input voltage (single channel) V E +. V V Enable input current (single channel) I E ma Surge current t = μs SM ma Output power dissipation (single channel) P diss mw Output power dissipation (per channel for dual channel) P diss mw OUTPUT Supply voltage min maximum V Output current I O ma Output voltage V O V Output power dissipation (single channel) P diss 8 mw Output power dissipation (per channel for dual channel) P diss mw COUPLER Isolation test voltage t = s V ISO V RMS Storage temperature T stg - to + C Operating temperature T amb - to + C Lead solder temperature for s C Solder reflow temperature () for min C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affeceliability. () Refer to reflow profile for soldering conditions for surface mounted devices. RECOMMENDED OPERATING CONDITION PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Operating temperature T amb - C Supply voltage.. V Input current low level L μa Input current high level H ma Output pull up resistor K Ω Logic high enable voltage V EH V Logic low enable voltage V EL..8 V Fanout N - Rev.., -Oct- Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT ELECTRICAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Inpuorward voltage = ma V F... V Reverse current V R = V I R. μa Input capacitance f = MHz, V F = V C I pf OUTPUT V E =. V, = ma I CCH. ma High level supply current (single channel) V E =, = ma I CCH. ma High level supply current (dual channel) = ma I CCH. ma V E =. V, = ma I CCL ma Low level supply current (single channel) V E =, = ma I CCL. ma Low level supply current (dual channel) = ma I CCL. ma High level output current Low level output voltage V E = V, V O =. V, = μa V E = V, = ma, I OL (sinking) = ma I OH. μa V OL.. V Input threshold current V E = V, V O =. V, I OL (sinking) = ma I TH. ma High level enable current I EH -. -. ma Low level enable current I EL -.8 -. ma High level enable voltage V EH V Low level enable voltage V EL.8 V Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Propagation delay time to high output level = Ω, C L = pf 8 ns Propagation delay time to low output level = Ω, C L = pf ns Pulse width distortion = Ω, C L = pf -.9 ns Propagation delay skew = Ω, C L = pf t PSK 8 ns Outpuise time ( to 9 %) = Ω, C L = pf ns Outpuall time (9 to %) = Ω, C L = pf ns Propagation delay time of enable from V EH to V EL Propagation delay time of enable from V EL to V EH = Ω, C L = pf, V EL = V, V EH = V = Ω, C L = pf, V EL = V, V EH = V t ELH ns t EHL ns Note Over recommended temperature (T A = - C to + C), = V, =. ma unless otherwise specified. All typicals at T A = C, = V. Rev.., -Oct- Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT Single channel Pulse gen. Z o = Ω = = ns Inpu ti F RM V E V OUT GND 8. µf bypass C = pf L Input =. ma =. ma ma V OH. V V OL The probe and Jig capacitances are included in C L 89- Fig. - Single Channel Test Circuior,, and Pulse gen. Z o = Ω = = ns Input R M 8. µf bypass C L = PF 89- Fig. - Dual Channel Test Circuior,, and Pulse gen. Z o = Ω t = t = ns f r Input V E Single channel. ma V E V OUT GND 8. µf bypass C = pf L Inpu t V E t EHL t ELH V. V. V The probe and Jig capacitances are included in C L 89- Fig. - Single Channel Test Circuior t EHL, t ELH Rev.., -Oct- Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT COMMON MODE TRANSIENT IMMUNITY PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Common mode transient immunity (high) Common mode transient immunity (low) Notes () For VOT and VOT () For VOT and VOT () For VOT and VOT V CM = V, = V, = ma, V O(min) = V, = Ω, T amb = C () CM H V/μs V CM = V, = V, = ma, V O(min) = V, = Ω, T amb = C () CM H V/μs V CM = kv, = V, = ma, V O(min) = V, = Ω, T amb = C () CM H V/μs V CM = V, = V, =. ma, V O(max) =.8 V, = Ω, T amb = C () CM L V/μs V CM = V, = V, =. ma, V O(max) =.8 V, = Ω, T amb = C () CM L V/μs V CM = kv, = V, =. ma, V O(max) =.8 V, = Ω, T amb = C () CM L V/μs Single channel V FF B A V E V OUT GND 8. µf bypass V CM V O V CM (PEAK) V Switch AT A: = ma V V O (min.) Switch AT A: =. ma V O (max.) V O. V CM H CM L V CM + - Pulse generator Z = Ω O 89- Fig. - Single Channel Test Circuior Common Mode Transient Immunity V FF B A Dual channel 8. µf bypass GND 89- V CM + - Pulse generator Z = Ω O Fig. - Dual Channel Test Circuior Common Mode Transient Immunity Rev.., -Oct- Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification according to IEC 8 part // Comparative tracking index CTI 99 V IOTM V V IORM V P SO mw I SI ma T SI C Creepage mm Clearance mm Insulation thickness. mm Note As per IEC --,...8., this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of prodective circuits. TYPICAL CHARACTERISTICS (T amb = C, unless otherwise specified) V F - Forward Voltage (V)....... = ma = ma = ma = ma I R - Reverse Current (na) V R = V. T amb Fig. - Forward Voltage vs. Ambient Temperature - T amb Fig. 8 - Reverse Current vs. Ambient Temperature V F - Forward Voltage (V)........... - Forward Current (ma) Fig. - Forward Voltage vs. Forward Current I CCI - Low Level Supply Current (ma)........ = V = ma = V = ma. T amb Fig. 9 - Low Level Supply Current vs. Ambient Temperature Rev.., -Oct- Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT I CCH - High Level Supply Current (ma).......9 = V =. ma = V =. ma.8 T amb Fig. - High Level Supply Current vs. Ambient Temperature V OL - Low Level Output Voltage (V)...... =. V = ma I L = ma I L = ma I L = ma I L = ma. 8 T amb Fig. - Low Level Output Voltage vs. Ambient Temperature I TH - Input Threshold On Current (µa).8.. = Ω..... T amb Fig. - Input Threshold On Current vs. Ambient Temperature I OL - Low Level Output Current (ma) = ma = ma 9 T amb Fig. - Low Level Output Current vs. Ambient Temperature... = Ω.... T amb I TH - Input Threshold Off Current (µa) Fig. - Input Threshold Off Current vs. Ambient Temperature T amb I OH - High Level Output Current (na) Fig. - High Level Output Current vs. Ambient Temperature Rev.., -Oct- Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT V o - Output Voltage (V)............ = Ω - Forward Input Current (ma) PWD - Pulse Width Distortion (ns) = Ω T amb Fig. - Output Voltage vs. Forward Input Current Fig. 9 - Pulse Width Distortion vs. Ambient Temperature t P - Propagation Delay Time (ns) 8, Ω, Ω, kω, kω tphl, kω, kω T amb Fig. - Propagation Delay vs. Ambient Temperature PWD - Pulse Width Distortion (ns) = Ω 9 - Forward Current (ma) Fig. - Pulse Width Distortion vs. Forward Current t P - Propagation Delay Time (ns) 8, Ω, kω, Ω, kω, kω, kω 9 - Forward Current (ma) Fig. 8 - Propagation Delay vs. Forward Current, f - Rise and Fall Time (ns),,, = Ω, = Ω,, T amb Fig. - Rise and Fall Time vs. Ambient Temperature Rev.., -Oct- 8 Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

VOT, VOT, VOT, VOT, VOT, VOT, f - Rise and Fall Time (ns),,, = Ω, = Ω,, 9 - Forward Current (ma) t EHL t EHL 8 T amb Fig. - Rise and Fall Time vs. Forward Current Fig. - Enable Propagation Delay vs. Ambient Temperature t E - Enable Propagation Delay (ns) t ELH t ELH t ELH = Ω t EHL = Ω PACKAGE DIMENSIONS in millimeters. ±. R.. C L.9 ±....9... Pin one ID..88 ±..8 ±..9 ±. ISO methode A... max..8 ±. i8-.. typ.. ±. plcs. R. max. Lead coplanarity ±. max. PACKAGE MARKING (example) X V YWW Y8 Notes The VDE Logo is only marked on option parts. Tape and reel suffix (T) is not part of the package marking. ESD CAUTION This is an ESD (electro static discharge) sensitive device. Electrostatic charges accumulate on the human body and test equipment and can discharge without detection. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ESD withstand voltage of this device is up to V acc. to JESD-A-B. Rev.., -Oct- 9 Document Number: 8 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

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