VS-ETS8S-M3, VS-ETSS-M3, VS-ETSS-M3 Series High Voltage Surface Mount Input Rectifier Diode, FETURES TO-63 (D PK) 3 node ase cathode 3 node Meets MSL level, per J-STD-, LF maximum peak of 6 C Glass passivated pellet chip junction Designed and qualified according to JEDEC -JESD 7 Material categorization: for definitions of compliance please see /doc?999 PRODUCT SUMMRY Package TO-63 (D PK) I F(V) V R 8 V, V, V V F at I F. V I FSM 6 T j max. 5 C Diode variation Single die PPLICTIONS Input rectification Vishay switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-ETS..S-M3 rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 5 C junction temperature. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE RIDGE THREE-PHSE RIDGE UNITS Capacitive input filter T = 55 C, T J = 5 C common heatsink of C/W. 6. MJOR RTINGS ND CHRCTERISTICS SYMOL CHRCTERISTICS VLUES UNITS I F(V) Sinusoidal waveform V RRM 8/ V I FSM 6 V F, T J = 5 C. V T J - to +5 C VOLTGE RTINGS PRT NUMER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-ETS8S-M3 8 9 VS-ETSS-M3 VS-ETSS-M3 3 I RRM T 5 C m.5 Revision: -Feb-6 Document Number: 9888 RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
VS-ETS8S-M3, VS-ETSS-M3, VS-ETSS-M3 Series SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum average forward current I F(V) T C = 5 C, 8 conduction half sine wave Maximum peak one cycle ms sine pulse, rated V RRM applied 35 I non-repetitive surge current FSM ms sine pulse, no voltage reapplied 6 Maximum I t for fusing I ms sine pulse, rated V RRM applied 9 t s ms sine pulse, no voltage reapplied 3 Maximum I t for fusing I t t =. ms to ms, no voltage reapplied 9 s ELECTRICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum forward voltage drop V FM, T J = 5 C. V Forward slope resistance r t m T J = 5 C Threshold voltage V F(TO).8 V T J = 5 C.5 Maximum reverse leakage current I RM V R = Rated V RRM T J = 5 C.5 m THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg - to +5 C Maximum thermal resistance, junction to case R thjc DC operation.5 Maximum thermal resistance, junction to ambient (PC mount) R () thj 6 C/W Soldering temperature T S 6 C pproximate weight Marking device Case style TO-63 (D PK) Note () When mounted on " square (65 mm ) PC of FR- or G- material oz. ( μm) copper C/W For recommended footprint and soldering techniques refer to application note #N-99 g.7 oz. ETS8S ETSS ETSS Revision: -Feb-6 Document Number: 9888 RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
VS-ETS8S-M3, VS-ETSS-M3, VS-ETSS-M3 Series Maximum llowable Case Temperature ( C) 5 3 9 8 3 ETS.. Series R thjc (DC) =.5 C/W 6 9 Conduction angle 8 6 8 Maximum verage Forward Power Loss (W) 8 6 8 6 DC 8 9 6 3 RMS limit Conduction period ETS.. Series T J = 5 C 6 8 6 verage Forward Current () verage Forward Current () Fig. - Current Rating Characteristics Fig. - Forward Power Loss Characteristics Maximum llowable Case Temperature ( C) 5 3 9 3 6 9 6 8 ETS.. Series R thjc (DC) =.5 C/W Conduction period 8 DC 6 8 Peak Half Sine Wave Forward Current () 5 3 t any rated load condition and with rated Vrrm applied following surge. Initial Tj = 5 C at 6 Hz.83s at 5 Hz.s 9 8 7 6 5 VS-ETS..S Series 3 verage Forward Current () Number of Equal mplitude Half Cycle Current Pulses (N) Fig. - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum verage Forward Power Loss (W) 6 8 6 8 9 6 3 6 RMS limit Conduction angle ETS.. Series T J = 5 C 8 Peak Half Sine Wave Forward Current () 7 5 3 9 7 5 3 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied VS-ETS..S Series.. verage Forward Current () Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: -Feb-6 3 Document Number: 9888 RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
VS-ETS8S-M3, VS-ETSS-M3, VS-ETSS-M3 Series Instantaneous Forward Current () T J = 5 C T J = 5 C ETS.. Series.5..5..5 3. Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Z thjc - Transient Thermal Impedance ( C/W) Single pulse D =.5 D =.33 D =.5 D =.7 D =.8 Steady state value (DC operation) ETS.. Series..... Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Revision: -Feb-6 Document Number: 9888 RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
VS-ETS8S-M3, VS-ETSS-M3, VS-ETSS-M3 Series ORDERING INFORMTION TLE Device code VS- E T S S TRL -M3 3 5 6 7 8 9 - Vishay Semicondutors product - Current rating ( = ) 3 - Circuit configuration: E = single diode - Package: T = D PK 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x = V RRM 7 - S = surface mountable 8 = 8 V = V = V 8 - None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER TUE MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-ETS8S-M3 5 ntistatic plastic tube VS-ETS8STRR-M3 8 8 3" diameter reel VS-ETS8STRL-M3 8 8 3" diameter reel VS-ETSS-M3 5 ntistatic plastic tube VS-ETSSTRR-M3 8 8 3" diameter reel VS-ETSSTRL-M3 8 8 3" diameter reel VS-ETSS-M3 5 ntistatic plastic tube VS-ETSSTRR-M3 8 8 3" diameter reel VS-ETSSTRL-M3 8 8 3" diameter reel VS-ETS8S-M3 5 ntistatic plastic tube LINKS TO RELTED DOCUMENTS Dimensions Part marking information Packaging information /doc?956 /doc?95 /doc?953 Revision: -Feb-6 5 Document Number: 9888 RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
DIMENSIONS in millimeters and inches D PK Outline Dimensions Conforms to JEDEC outline D PK (SMD-) (3) L ()(3) E c (E) (D) (3) Pad layout. (.3) 9.65 (.38) D L x e 3 H () x b x b C Detail. M M c ±. M E View - H (3) 7.9 (.7) 5. (.65).3 (.8) Plating.6 (.3). (.96) () b, b3 3.8 (.5) ase Metal Gauge plane Lead tip to 8 L3 L L Detail Rotated 9 CW Scale: 8: Seating plane (c) (b, b) Section - and C - C Scale: None c () SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MX. MX. MX. MX. NOTES.6.83.6.9 D 6.86 8..7.35 3..5.. E 9.65.67.38., 3 b.5.99..39 E 7.9 8.8.3.36 3 b.5.89..35 e.5 SC. SC b..78.5.7 H.6 5.88.575.65 b3..73.5.68 L.78.79.7. c.38.7.5.9 L -.65 -.66 3 c.38.58.5.3 L.7.78.5.7 c..65.5.65 L3.5 SC. SC D 8.5 9.65.335.38 L.78 5.8.88.8 Notes () Dimensioning and tolerancing per SME Y.5 M-99 () Dimension D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E () Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-63 Revision: 8-Jul-5 Document Number: 956 RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
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