MUR4, MUR6, RURP4, RURP6 Data Sheet January 22 A, 4V - 6V Ultrafast Diodes The MUR4, MUR6, RURP4 and RURP6 are low forward voltage drop ultrafast recovery rectifiers ( < 6ns). They use a glass-passivated ion-implanted, epitaxial construction. These devices are intended for use as output rectifiers and flywheel diodes in a variety of high-frequency pulse-width modulated switching regulators. Their low stored charge and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors. Formerly developmental type TA9616. Ordering Information PART NUMBER PACKAGE BRAND MUR4 TO-22AC MUR4 RURP4 TO-22AC RURP4 MUR6 TO-22AC MUR6 Features Ultrafast with Soft Recovery................... <6ns Operating Temperature.......................175 Reverse Voltage.............................6V Avalanche Energy Rated Planar Construction Applications Switching Power Supplies Power Switching Circuits General Purpose Packaging CATHODE (FLANGE) JEDEC TO-22AC ANODE CATHODE RURP6 TO-22AC RURP6 NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings T C = 25, Unless Otherwise Specified MUR4 RURP4 MUR6 RURP6 Peak Repetitive Reverse Voltage........................................ V RRM 4 6 V Working Peak Reverse Voltage......................................... V RWM 4 6 V DC Blocking Voltage.................................................... V R 4 6 V Average Rectified Forward Current.......................................I F(AV) A (T C = 155 ) Repetitive Peak Surge Current.......................................... I FRM 16 16 A (Square Wave, 2kHz) Nonrepetitive Peak Surge Current........................................ I FSM 1 1 A (Halfwave, 1 Phase, 6Hz) Maximum Power Dissipation.............................................. P D 75 75 W Avalanche Energy (See Figures 1 and 11)................................ E AVL 2 2 mj Operating and Storage Temperature................................... T STG, T J -65 to 175-65 to 175 Maximum Lead Temperature for Soldering Leads at.63 in. (1.6mm) from case for 1s............................... T L 3 3 Package Body for 1s, see Tech Brief 334................................ T PKG 26 26 UNITS 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B
MUR4, MUR6, RURP4, RURP6 Electrical Specifications T C = 25, Unless Otherwise Specified MUR4, RURP4 MUR6, RURP6 SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX UNITS V F I F = A - - 1.3 - - 1.5 V I F = A, T C = 15 - - 1. - - 1.2 V I R V R = 4V - - 1 - - - µa V R = 6V - - - - - 1 µa V R = 4V, T C = 15 - - 5 - - - µa V R = 6V, T C = 15 - - - - - 5 µa I F = 1A, di F /dt = 2A/µs - - 6 - - 6 ns I F = A, di F /dt = 2A/µs - - 7 - - 7 ns I F = A, di F /dt = 2A/µs - 32 - - 32 - ns I F = A, di F /dt = 2A/µs - 21 - - 21 - ns Q RR I F = A, di F /dt = 2A/µs - 195 - - 195 - nc C J V R = 1V, I F = A - 25 - - 25 - pf R θjc - - 2 - - 2 /W DEFINITIONS V F = Instantaneous forward voltage (pw = 3µs, D = 2%). I R = Instantaneous reverse current. = Reverse recovery time (See Figure 9), summation of +. = Time to reach peak reverse current (See Figure 9). = Time from peak I RM to projected zero crossing of I RM based on a straight line from peak I RM through 25% of I RM (See Figure 9). Q RR = Reverse recovery charge. C J = Junction Capacitance. R θjc = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 4 1 1 175 1 25.5.5 1 1.5 2 2.5 V F, FORWARD VOLTAGE (V) I R, REVERSE CURRENT (µa) 5 1 175 1 1 1.1 25.1 1 2 3 4 5 6 V R, REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B
MUR4, MUR6, RURP4, RURP6 Typical Performance Curves (Continued) 6 T C = 25, di F /dt = 2A/µs 1 T C = 1, di F /dt = 2A/µs 5 4 3 2 1 6 4 2.5 1 4.5 1 4 FIGURE 3., AND CURVES vs FORWARD CURRENT FIGURE 4., AND CURVES vs FORWARD CURRENT 125 1 75 5 25.5 T C = 175, di F /dt = 2A/µs 1 4 I F(AV), AVERAGE FORWARD CURRENT (A) DC 6 SQ. WAVE 4 2 14 145 15 155 16 165 17 175 T C, CASE TEMPERATURE ( ) FIGURE 5., AND CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 1 C J, JUNCTION CAPACITANCE (pf) 6 4 2 5 1 15 2 V R, REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B
Test Circuits and Waveforms MUR4, MUR6, RURP4, RURP6 V GE AMPLITUDE AND R G CONTROL di F /dt t 1 AND t 2 CONTROL I F L V GE t 1 R G DUT IGBT CURRENT SENSE + - I F di F dt t 2.25 I RM I RM FIGURE. TEST CIRCUIT FIGURE 9. WAVEFORMS AND DEFINITIONS I = 1A L = 4mH R <.1Ω E AVL = 1/2LI 2 [V R(AVL) /(V R(AVL) - )] Q 1 = IGBT (BV CES > DUT V R(AVL) ) L R V AVL Q 1 CURRENT SENSE + I V I L I L DUT - t t 1 t 2 t FIGURE 1. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B
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