Schottky Rectifier, 2 x 5 TO-220B PRODUCT SUMMRY Package TO-220B I F(V) 2 x 5 V R 25 V, 30 V V F at I F 0.40 V I RM max. 97 m at 25 C T J max. 50 C Diode variation Common cathode E S Base 2 common cathode node 2 node Common 3 cathode 3 mj FETURES 50 C T J operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 6249-2-2 definition (-N3 only) DESCRIPTION The VS-32CTQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 50 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MJOR RTINGS ND CHRCTERISTICS SYMBOL CHRCTERISTICS VLUES UNITS I F(V) Rectangular waveform 30 V RRM 25/30 V I FSM t p = 5 μs sine 900 V F 5 pk, 0.40 V T J Range - 55 to 50 C VOLTGE RTINGS PRMETER SYMBOL VS-32CTQ025PbF VS-32CTQ025-N3 VS-32CTQ030PbF VS-32CTQ030-N3 UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 25 25 30 30 V BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum average forward current See fig. 5 I F(V) 50 % duty cycle at T C = 5 C, rectangular waveform 30 Maximum peak one cycle 5 µs sine or 3 µs rect. pulse Following any rated load 900 non-repetitive surge current I FSM condition and with rated See fig. 7 ms sine or 6 ms rect. pulse V RRM applied 250 Non-repetitive avalanche energy E S, I S =.20, L =. mh 3 mj Current decaying linearly to zero in μs Repetitive avalanche current I R Frequency limited by T J maximum V =.5 x V R typical 3 Revision: -Oct- Document Number: 94202 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
ELECTRICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS 5 0.49 Maximum forward voltage drop 30 0.58 V () FM See fig. 5 0.40 30 0.53 V Maximum reverse leakage current.75 I () RM V R = Rated V R See fig. 2 97 m Threshold voltage V F(TO) 0.233 V T J = T J maximum Forward slope resistance r t 9.09 m Maximum junction capacitance per leg C T V R = 5 V DC (test signal range 0 khz to MHz) 25 C 300 pf Typical series inductance per leg L S Measured lead to lead 5 mm from package body 8.0 nh Maximum voltage rate of change dv/dt Rated V R 000 V/µs Note () Pulse width < 300 μs, duty cycle < 2 % THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg - 55 to 50 C Maximum thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink pproximate weight Mounting torque Marking device R thjc DC operation See fig. 4 3.25 R thcs Mounting surface, smooth and greased 0.50 C/W 2 g 0.07 oz. minimum 6 (5) kgf cm maximum 2 () (lbf in) Case style TO-220B 32CTQ025 32CTQ030 Revision: -Oct- 2 Document Number: 94202 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
I F - Instantaneous Forward Current () 00 0 0 0.2 0.4 0.6 0.8.0.2.4.6 V FM - Forward Voltage Drop (V) T J = 50 C 0..8 I R - Reverse Current (m) 00 0 0.0 0.00 0 T J = 50 C 5 T J = 0 C T J = 75 C T J = 50 C 5 20 25 30 V R - Reverse Voltage (V) Fig. - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 000 C T - Junction Capacitance (pf) 00 0 0 5 5 20 25 30 35 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 0. 0.0 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.00 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) P DM Notes:. Duty factor D = t /t 2 2. Peak T J = P DM x Z thjc + T C t t 2 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: -Oct- 3 Document Number: 94202 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
llowable Case Temperature ( C) 60 50 40 30 20 0 90 Square wave (D = 0.50) 80 % rated V R applied See note () DC 80 0 5 5 20 25 verage Power Loss (W) 8 6 4 2 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC RMS limit 0 0 5 5 20 25 I F(V) - verage Forward Current () I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 6 - Forward Power Loss Characteristics I FSM - Non-Repetitive Surge Current () 00 0 t any rated load condition and with rated V RRM applied following surge 0 00 000 t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 High-speed switch R g = 25 Ω Freewheel diode + V d = 25 V Current monitor 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 80 % rated V R Revision: -Oct- 4 Document Number: 94202 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
ORDERING INFORMTION TBLE Device code VS- 32 C T Q 030 PbF 2 3 4 5 6 7 - product 2 - Current rating (30 ) 3 4 5 - Circuit configuration: C = Common cathode - Package: T = TO-220 - Schottky Q series 6 - Voltage ratings 7 - Environmental digit 025 = 25 V 030 = 30 V PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-32CTQ025PbF 50 00 ntistatic plastic tube VS-32CTQ025-N3 50 00 ntistatic plastic tube VS-32CTQ030PbF 50 00 ntistatic plastic tube VS-32CTQ030-N3 50 00 ntistatic plastic tube LINKS TO RELTED DOCUMENTS Dimensions Part marking information TO-220B PbF TO-220B -N3 /doc?95222 /doc?95225 /doc?95028 Revision: -Oct- 5 Document Number: 94202 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
Outline Dimensions TO-220B DIMENSIONS in millimeters and inches (6) E E2 (7) Ø P 0.04 M B M B Seating plane (E) Thermal pad (6) D Q 2 3 (6) (H) D D H (7) C C D2 (6) Detail B L (2) D 3 x b 3 x b2 3 2 Detail B C E (6) L Base metal (b, b2) Plating 0.05 M B M Lead tip 2 x e e c 2 Lead assignments Diodes. - node/open 2. - Cathode 3. - node View - c c (4) (4) b, b3 Section C - C and D - D Conforms to JEDEC outline TO-220B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65 0.67 0.83 E..5 0.398 0.44 3, 6.4.40 0.045 0.055 E 6.86 8.89 0.270 0.350 6 2 2.56 2.92 0. 0.5 E2-0.76-0.030 7 b 0.69.0 0.027 0.040 e 2.4 2.67 0.095 0.5 b 0.38 0.97 0.05 0.038 4 e 4.88 5.28 0.92 0.208 b2.20.73 0.047 0.068 H 6.09 6.48 0.240 0.255 6, 7 b3.4.73 0.045 0.068 4 L 3.52 4.02 0.532 0.552 c 0.36 0.6 0.04 0.024 L 3.32 3.82 0.3 0.50 2 c 0.36 0.56 0.04 0.022 4 Ø P 3.54 3.73 0.39 0.47 D 4.85 5.25 0.585 0.600 3 Q 2.60 3.00 0.2 0.8 D 8.38 9.02 0.330 0.355 90 to 93 90 to 93 D2.68 2.88 0.460 0.507 6 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2 and E (7) Dimensions E2 x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except 2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95222 For technical questions within your region, please contact one of the following: Revision: 08-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
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