GF705 MagnetoResistive Magnetic Field Sensor

Similar documents
AA746. MagnetoResistive FreePitch Sensor. Data sheet

AL796 MagnetoResistive FixPitch Sensor (2 mm)

AL780 MagnetoResistive FixPitch Sensor (5 mm)

AL795 MagnetoResistive FixPitch Sensor (0.5 mm)

AL794 MagnetoResistive FixPitch Sensor (2.5 mm)

GF708 MagnetoResistive Magnetic Field Sensor

AA745A. MagnetoResistive FreePitch Sensor DATA SHEET

AFF756. MagnetoResistive Field Sensor DATA SHEET

GF708 MagnetoResistive Magnetic Field Sensor

AA747. MagnetoResistive Angle Sensor. DAtA Sheet

AFF755B. MagnetoResistive Field Sensor. DAtA ShEEt

AL803 MagnetoResistive FixPitch Sensor (1 mm)

AL780 MagnetoResistive Length and Angle Sensor Data sheet

EBR7912EBI-CA-KA Incremental Sensor Module with Reference

VTMS. Valve Train Measurement Solution. Data sheet

EBI7903CAx-DA-IF Incremental Sensor Module

EBI7904CAx-DA-IF Incremental FixPitch Sensor Module

EBK7000. Evaluation Kit for Angle and Length Measurement with MagnetoResistive Sensor Technology EBK7000_PIE_01. Product Information.

BB Product profile. 2. Pinning information. 3. Ordering information. FM variable capacitance double diode. 1.1 General description

VHF variable capacitance diode

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA V P ZSM. non-repetitive peak reverse power dissipation

EBx7811xBx-DA-UA.DSE.04

Four planar PIN diode array in SOT363 small SMD plastic package.

Planar PIN diode in a SOD523 ultra small plastic SMD package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description

BAS32L. 1. Product profile. High-speed switching diode. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

Two elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified

PNP general-purpose double transistor. PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAP Product profile. 2. Pinning information. 3. Ordering information. Silicon PIN diode. 1.1 General description. 1.2 Features and benefits

PMEG4010ETP. 40 V, 1 A low VF MEGA Schottky barrier rectifier. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply

Planar PIN diode in a SOD523 ultra small SMD plastic package.

50 ma LED driver in SOT457

DATA SHEET. BAP50-05 General purpose PIN diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Feb May 10.

20 ma LED driver in SOT457

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

High-speed switching in e.g. surface-mounted circuits

CMS2005 MagnetoResistive Current Sensor (I PN

Single Schottky barrier diode

DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D102. BAP64-04W Silicon PIN diode Jan 29. Product specification Supersedes data of 2000 Jun 06

Single Zener diodes in a SOD123 package

65 V, 100 ma NPN general-purpose transistors

PEMD48; PUMD48. NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω

CDS4025 MagnetoResistive Current Sensor (I PN

RB521CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Digital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads

BC817-25QA; BC817-40QA

DISCRETE SEMICONDUCTORS DATA SHEET. BAP65-03 Silicon PIN diode. Product specification Supersedes data of 2001 May Feb 11

BAT54W series. 1. Product profile. 2. Pinning information. Schottky barrier diodes. 1.1 General description. 1.2 Features and benefits

High-speed switching diodes. Type number Package Configuration Package Nexperia JEITA JEDEC

BAV102; BAV103. Single general-purpose switching diodes

RB520CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

PDTC143/114/124/144EQA series

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PESD5V0L1ULD. Low capacitance unidirectional ESD protection diode

100BASE-T1 / OPEN Alliance BroadR-Reach automotive Ethernet Low-Voltage Differential Signaling (LVDS) automotive USB 2.

PDTC143X/123J/143Z/114YQA series

BCP68; BC868; BC68PA

High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

BC857xMB series. 45 V, 100 ma PNP general-purpose transistors

Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications

PDTC143Z series. NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP61

PEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

NPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

PMEG4010ER. 1. Product profile. 1 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PEMH11; PUMH11. NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

BCP53; BCX53; BC53PA

PDTB1xxxT series. 500 ma, 50 V PNP resistor-equipped transistors

BCP55; BCX55; BC55PA

NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

NX1117C; NX1117CE series

Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.

Hex non-inverting precision Schmitt-trigger

GLM700ASB family. Tooth sensor module with integrated magnet DATA SHEET

Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.

PTVS20VU1UPA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 300 W Transient Voltage Suppressor

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMBT Product profile. 2. Pinning information. PNP switching transistor. 1.1 General description. 1.2 Features and benefits. 1.

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG3050BEP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

PESD24VL1BA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

ES1DVR. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Logic controlled high-side power switch

PTVS22VU1UPA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 300 W Transient Voltage Suppressor

PESD5V0S2BT. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Two tolerance series: ± 2 % and ± 5 % AEC-Q101 qualified

PMEG4010ESB. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

PNE20010ER. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BAS16GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BAV70SRA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

PMEG4050ETP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PDTD1xxxU series. 500 ma, 50 V NPN resistor-equipped transistors

Transcription:

The is a magnetic field sensor based on the multilayer Giant MagnetoResistive (GMR) effect. The Sensor contains a Wheatstone bridge with on-chip flux concentrators to improve the sensitivity. The sensor is ideal for measuring magnetic fields in a linear range from 1.8 mt up to 8 mt. A typical application is endpoint detection through a cylinder of stainless steel: A moving magnet inside a thick-walled cylinder is detected by a sensor from the outside. The is available as bond version (bare die) and as flip-chip or LGA-package for SMD assembly. Product Overview Article description Package Delivery Type APA-AE Flip-chip Tape on reel (5000) ACA-AB Die on wafer Waferbox AMA-AE LGA6S Tape on reel (2500) Minimum order quantities apply. Quick Reference Guide Symbol Parameter Min. Typ. Max. Unit V CC Supply voltage - 5.0 - V B Lin Linear magnetic range 1.8-8.0 mt S Sensitivity (in linear range) 8 10 13 mv/v/mt R B Bridge resistance 4.0 5.0 7.0 kω Absolute Maximum Ratings In accordance with the absolute maximum rating system (IEC60134). Symbol Parameter Min. Max. Unit V CC Supply voltage -9.0 +9.0 V Ambient temperature -40 +125 C Features Based on the GiantMagnetoResistive (GMR) effect Flip-chip assembly (BGA) Temperature range from -40 C to +125 C Advantages Large working distance Excellent absolute accuracy Large range of magnetic field strength Very small size Contactless field measuring Switching with adjustable switching thresholds Applications Endpoint detection in cylinders Reference monitoring Magnetic switches Stresses beyond those listed under Absolute maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.sensitec.com RoHS-Compliant Page 1 of 7

Magnetic Data Symbol Parameter Conditions Min. Typ. Max. Unit B Lin Linear magnetic flux density range (abs) See Fig.1 1.8-8.0 mt B sat Saturation magnetic flux density See Fig.1 - ±25 - mt At B sat the sensor delivers the maximal output voltage V peak. By exceeding the value of B sat the output signal is no longer unique. Electrical Data = 25 C; unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit V CC Supply voltage - 5.0 - V S Sensitivity B = (1.8...8) mt 8 10 13 mv/v/mt TC S Temperature coefficient of Sensitivity 2) = (-40 +125) C -0.26-0.22-0.18 %/K R B Bridge resistance 3) 4.0 5.0 7.0 kω TC RB Temperature coefficient of RB 4) = (-40 +125) C 0.17 0.20 0.23 %/K V peak Maximum output voltage 5) See Fig.1-110 - mv/v V OUT Voltage output delta 6) V OUT(3 mt) - V OUT(0 mt) 0 mt @ 90 deg 3 mt @ 0 deg 12.3-27.4 mv/v 2) TC S = 100 S (T2) - S (T S (T (T 2 - T 1 ) with T 1 = 25 C; T 2 = 125 C. 3) Bridge resistance between pads 1 and 3 and 2 and 4. 4) TC RB = 100 R B(T2) - R B(T R B(T (T 2 - T 1 ) with T 1 = 25 C; T 2 = 125 C. 5) Maximal output voltage at B sat. 6) Parameter checked on 96 samples. Fig. 1: Typical output voltage of the depending on the magnetic flux density. Page 2 of 7

Accuracy = 25 C; unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit V off Offset voltage per V CC See Fig. 1-5.0 - +5.0 mv/v TC Voff Temperature coefficient of V off = (-40 +125) C -20 7 +25 µv/v/k ε Lin Linearity error B = (1.8 8) mt; see Fig. 2-2 5 % of Vout H C Hysteresis error See Fig. 3-0.05 0.1 mt The hysteresis error is ascertained in the magnetic field, ramped from 10 mt to 10 mt and back to 10 mt. The value is specified for the linear range B Lin. Fig. 2: Definition of linearity error ε Lin (schematic). Fig. 3: Definition of hysteresis error H C (schematic). In Fig. 4 the resistors R 23 and R 41 are covered by two flux concentrators (shields) to prevent an applied magnetic field from influencing them. Therefore, when a field is applied, the resistors R 12 and R 34 decrease in resistance, while the other two resistors under the flux concentrator do not. This imbalance leads to the bridge output. Fig. 4: Simplified circuit diagram. Page 3 of 7

as Bare Die and Flip-Chip Pinning Pad Symbol Parameter 1 V CC Supply voltage 2 +V out Positive output voltage 3 GND Ground 4 -V out Negative output voltage Note: Pin 1 is not marked on the chip. Since the chip is symmetrical, its orientation is only defined by its long and short side. Fig. 5: Top: on its pad / bump side shown with the direction of its sensitivity. Bottom: Marked side of the flip-chip version only. Mechanical Data Symbol Parameter Min. Typ. Max. Unit A Length 1435 1460 1485 µm B Width 935 960 985 µm Bare die C Height 240 250 260 µm d Diameter - 230 - µm A Length 1425 1460 1485 µm B Width 935 960 985 µm Flip-chip C Height 400 410 420 µm d Diameter - 300 - µm S Standoff 2) - 240 - µm a Pitch a - 1000 - µm b Pitch b - 500 - µm e Margin - 230 - µm Fig. 6: Chip outline of. After reflow. 2) Diameter of solder ball before reflow. Data for Packaging and Interconnection Technologies Symbol Parameter Conditions Value Unit Bare die Flip-chip Pad material Au - Pad thickness 0.4 µm Solder ball material SnAg2.6Cu0.6 - Maximum solder temperature For 6 s 260 C Page 4 of 7

AMA LGA6S Pinning Pad Symbol Parameter 1 +V out Positive output voltage 2 NC Not connected 3 GND Ground 4 V CC Supply voltage 5 -V out Negative output voltage 6-8 NC Not connected Fig. 7: AKA. Dimensions Fig. 8 LGA6S for AMA. Page 5 of 7

General Information Product Status Article APA-AB ACA-AB AMA-AE Note Status The product is in series production. The product is in series production. The product is in series production. The status of the product may have changed since this data sheet was published. The latest information is available on the internet at www.sensitec.com. Disclaimer Sensitec GmbH reserves the right to make changes, without notice, in the products, including software, described or contained herein in order to improve design and/or performance. Information in this document is believed to be accurate and reliable. However, Sensitec GmbH does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Sensitec GmbH takes no responsibility for the content in this document if provided by an information source outside of Sensitec products. In no event shall Sensitec GmbH be liable for any indirect, incidental, punitive, special or consequential damages (including but not limited to lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) irrespective the legal base the claims are based on, including but not limited to tort (including negligence), warranty, breach of contract, equity or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Sensitec product aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the General Terms and Conditions of Sale of Sensitec GmbH. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Unless otherwise agreed upon in an individual agreement Sensitec products sold are subject to the General Terms and Conditions of Sales as published at www.sensitec.com. Sensitec GmbH Georg-Ohm-Str. 11 35633 Lahnau Germany Tel. +49 6441 9788-0 Fax +49 6441 9788-17 www.sensitec.com sensitec@sensitec.com Page 6 of 7

General Information Application Information Applications that are described herein for any of these products are for illustrative purposes only. Sensitec GmbH makes no representation or warranty whether expressed or implied that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Sensitec products, and Sensitec GmbH accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the Sensitec product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Sensitec GmbH does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using Sensitec products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). Sensitec does not accept any liability in this respect. Life Critical Applications These products are not qualified for use in life support appliances, aeronautical applications or devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Copyright 2017 by Sensitec GmbH, Germany All rights reserved. No part of this document may be copied or reproduced in any form or by any means without the prior written agreement of the copyright owner. The information in this document is subject to change without notice. Please observe that typical values cannot be guaranteed. Sensitec GmbH does not assume any liability for any consequence of its use. Sensitec GmbH Georg-Ohm-Str. 11 35633 Lahnau Germany Tel. +49 6441 9788-0 Fax +49 6441 9788-17 www.sensitec.com sensitec@sensitec.com Page 7 of 7