Distinguishing Between Mechanical and Electrostatic. Interaction in Single-Pass Multifrequency Electrostatic Force

Similar documents
Keysight Technologies Using Non-Contact AFM to Image Liquid Topographies. Application Note

SUPPORTING INFORMATION FOR

Electric polarization properties of single bacteria measured with electrostatic force microscopy

IMAGING P-N JUNCTIONS BY SCANNING NEAR-FIELD OPTICAL, ATOMIC FORCE AND ELECTRICAL CONTRAST MICROSCOPY. G. Tallarida Laboratorio MDM-INFM

Mapping piezoelectric response in nanomaterials using a dedicated non-destructive scanning probe technique. Supporting Information

Supporting Information. Atomic-scale Spectroscopy of Gated Monolayer MoS 2

Figure for the aim4np Report

Lateral Force: F L = k L * x

Investigate in magnetic micro and nano structures by Magnetic Force Microscopy (MFM)

; A=4π(2m) 1/2 /h. exp (Fowler Nordheim Eq.) 2 const

Rebirth of Force Spectroscopy: Advanced Nanomechanical, Electrical, Optical, Thermal and Piezoresponse Studies

Nanomechanical Mapping of a High Curvature Polymer Brush Grafted

ATOMIC FORCE MICROSCOPY

Basic methods in imaging of micro and nano structures with atomic force microscopy (AFM)

Supporting information: Visualizing the motion of. graphene nanodrums

Nanoscale Material Characterization with Differential Interferometric Atomic Force Microscopy

A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

Physics Faculty Publications and Presentations

Prepare Sample 3.1. Place Sample in Stage. Replace Probe (optional) Align Laser 3.2. Probe Approach 3.3. Optimize Feedback 3.4. Scan Sample 3.

attosnom I: Topography and Force Images NANOSCOPY APPLICATION NOTE M06 RELATED PRODUCTS G

- Near Field Scanning Optical Microscopy - Electrostatic Force Microscopy - Magnetic Force Microscopy

Supporting Information

An advanced impedance calibration method for nanoscale microwave imaging

Electrical Properties of Chicken Herpes Virus Based on Impedance Analysis using Atomic Force Microscopy

Study of shear force as a distance regulation mechanism for scanning near-field optical microscopy

Indentation Cantilevers

Using Nanoelectrical Solutions to expand the capability of AFM Dr. Peter De Wolf

Atomic Force Microscopy (Bruker MultiMode Nanoscope IIIA)

Cutting-edge Atomic Force Microscopy techniques for large and multiple samples

Supplementary Figure 1 Schematic illustration of fabrication procedure of MoS2/h- BN/graphene heterostructures. a, c d Supplementary Figure 2

Microscopic Structures

Atomic Force Microscopes

Park NX-Hivac: Phase-lock Loop for Frequency Modulation Non-Contact AFM

Akiyama-Probe (A-Probe) guide

AFM Lab Aplication note P01. AD8429 Piezoresponse Force Microscopy Amplifier

Standard Operating Procedure

Constant Frequency / Lock-In (AM-AFM) Constant Excitation (FM-AFM) Constant Amplitude (FM-AFM)

Scanning Microwave. Expanding Impedance Measurements to the Nanoscale: Coupling the Power of Scanning Probe Microscopy with the PNA

Circular Dichroism Microscopy Free from Commingling Linear Dichroism via Discretely Modulated Circular Polarization

A Project Report Submitted to the Faculty of the Graduate School of the University of Minnesota By

Manufacturing Metrology Team

Akiyama-Probe (A-Probe) guide

Measurement of Microscopic Three-dimensional Profiles with High Accuracy and Simple Operation

Supporting information for: Breaking Degeneracy of Tautomerization. Metastability from Days to Seconds

The NanomechPro Toolkit: Accurate Tools for Measuring Nanoscale Mechanical Properties for Diverse Materials

INDIAN INSTITUTE OF TECHNOLOGY BOMBAY

Alejandro Mendez, Ph.D. President & CEO Mendezized Metals Corporation

Outline: Introduction: What is SPM, history STM AFM Image treatment Advanced SPM techniques Applications in semiconductor research and industry

Supplementary information for Stretchable photonic crystal cavity with

Rudolf C. Hoffmann, Mareiki Kaloumenos, Silvio Heinschke, Peter Jakes, Emre Erdem Rüdiger-A. Eichel, and Jörg J. Schneider *,

Fine structure of the inner electric field in semiconductor laser diodes studied by EFM.

Lecture 20: Optical Tools for MEMS Imaging

Keysight Technologies Scanning Microwave Microscopy Solutions for Quantitative Semiconductor Device Characterization.

Article begins on next page

High-Resolution Bubble Printing of Quantum Dots

SUPPLEMENTARY INFORMATION

Author(s) Issue Date Text Version author. DOI / /18/9/095501

University of MN, Minnesota Nano Center Standard Operating Procedure

January, 2004 Jeju Island. Acknowledgements OTFL

Asylum Research. MFP-3D Infinity. Endless Applications. Unlimited Potential. Performance / Versatility / Support

Advanced Nanoscale Metrology with AFM

SUPPLEMENTARY INFORMATION

The effect of rod orientation on electrical anisotropy in silver nanowire networks for ultra-transparent electrodes

Akiyama-Probe (A-Probe) technical guide This technical guide presents: how to make a proper setup for operation of Akiyama-Probe.

Standard Operating Procedure of Atomic Force Microscope (Anasys afm+)

Supplementary Information

Supplemental information for Selective GaSb Radial Growth on Crystal Phase Engineered InAs Nanowires

~--7. I IIIII lll r10 /~s , I I r I I I I J I

Supplementary Information: Nanoscale. Structure, Dynamics, and Aging Behavior of. Metallic Glass Thin Films

Supplementary Figure 1. Effect of the spacer thickness on the resonance properties of the gold and silver metasurface layers.

AFM of High-Profile Surfaces

Atomic Force Microscopy (I)

Electronic Characterization of Materials Using Conductive AFM

ANALYSIS OF ELECTRON CURRENT INSTABILITY IN E-BEAM WRITER. Jan BOK, Miroslav HORÁČEK, Stanislav KRÁL, Vladimír KOLAŘÍK, František MATĚJKA

Elimination of bistability in constant-phase mode in atomic force microscopy

Application Note #548 AcuityXR Technology Significantly Enhances Lateral Resolution of White-Light Optical Profilers

SENSOR+TEST Conference SENSOR 2009 Proceedings II

Supporting Information

Supporting Information

Supporting Information

SUPPORTING INFORMATION

SUPPLEMENTARY INFORMATION

Nanosurf Nanite. Automated AFM for Industry & Research.

UNIVERSITY OF WATERLOO Physics 360/460 Experiment #2 ATOMIC FORCE MICROSCOPY

Agilent Technologies Gli analizzatori di reti della serie-x

Microvasculature on a chip: study of the Endothelial Surface Layer and the flow structure of Red Blood Cells

The file. signal, and. the. from

Optotop. 3D Topography. Roughness (Ra opt, Rq opt, and Rz opt) Height Distribution. Porosity Distribution. Effective Contact Area

SUPPLEMENTARY INFORMATION

Low Contrast Dielectric Metasurface Optics. Arka Majumdar 1,2,+ 8 pages, 4 figures S1-S4

1. Introduction. 2. Concept. reflector. transduce r. node. Kraftmessung an verschiedenen Fluiden in akustischen Feldern

Reconfigurable Complementary Monolayer MoTe2. Field-Effect Transistors for Integrated Circuits. Supporting Information

Nanonics Systems are the Only SPMs that Allow for On-line Integration with Standard MicroRaman Geometries

ATOMIC FORCE MICROSCOPY

CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER

A New Profile Measurement Method for Thin Film Surface

A broadband achromatic metalens for focusing and imaging in the visible

S1. Current-induced switching in the magnetic tunnel junction.

Charge Characterization Of An Electrically Charged Fiber Via Electrostatic Force Microscopy

PFM Experiments with High Voltage DC/AC Bias

Transcription:

SUPPORTING INFORMATION Distinguishing Between Mechanical and Electrostatic Interaction in Single-Pass Multifrequency Electrostatic Force Microscopy on a Molecular Material Marta Riba-Moliner, Narcis Avarvari, David. B. Amabilino, Arántzazu González-Campo, Andrés Gómez-Rodríguez *, Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08913 Bellaterra, Barcelona, Spain Laboratoire MOLTECH-Anjou UMR 6200, UFR Sciences, CNRS, Université d Angers, Bât. K, 2 Bd. Lavoisier, 49045 Angers, France School of Chemistry, The University of Nottingham, University Park, Nottingham NG72RD United Kingdom S1 The free amplitude of resonance of the cantilever was taken as a reference value (2.4 V, in dynamic mode). Then, the tip was progressively approached to a pure gold surface until its free amplitude of resonance became affected due to the proximity to the surface, until both were in contact (Fig. S1). With the linear fitting of the region, at the left side of point A, the calibration constant for the amplitude signal could be found, which transforms voltage units into nanometer 1

units. With such calibration constant, we could provide a value of the specific tip-sample distance while performing single pass EFM and Bimodal images, which was found to be 40-60 nm. In order to acquire the EFM and Bimodal images, a reduction of 25-35% of free amplitude value was used as a setpoint value. These parameters were in accordance with the literature, with the aim, on the one hand, to provide high quality topographic images in the repulsive regime and, on the other, without exerting to much force with the tip to the sample. Fig. S1 Curve of the amplitude vs. distance to quantify and calibrate the free amplitude in the first mode of resonance of the cantilever. Linear fit was approached. 2

S2 The amplitude in the second mode of resonance had to be calibrated as well, also though the plotting of the curve amplitude versus the distance (Fig. S2). In this case, the amplitude of vibration of the cantilever was amplified with a factor of x16 to ensure a good signal-to-noise ratio. Fitting the region of the curve that comprised the interaction tip-surface zone (Fig. S2, below point A), the specific set-point for the second mode of vibration could be ranged between 0.2-1 nm, depending on the specific properties of the sample. Fig. S2 Curve of the amplitude vs. distance to quantify and calibrate the free amplitude in the second mode of resonance of the cantilever. Linear fit was approached. 3

S3 A control experiment to compare the outgoing signal of working in resonance and out of resonance, in terms of signal-to-noise ratio, was elaborated. The reference sample was scanned in Single-pass Electrostatic Force Microscopy, at the interface between the gold and the silicon region. During the scan, the amplitude and frequency of the tip voltage was changed, as it can be seen in Fig. S3. This experiment also demonstrates the dependence of the electrostatic signal with the voltage used as well as with the frequency used. Working in resonance increased dramatically the electrostatic signal compared with working out of it, the signal increased by 300% (Fig. S3a-c). This evidence would enable a further decrease of the tip voltage, resulting in a gain of electrical lateral resolution, as the electrostatic field distribution under the tip has a circular distribution. From the profile depicted in Fig. S3b, the differentiation of the electrostatic response of the materials in the reference substrate could be clearly observed by using the second resonance frequency of the cantilever. The dependence of the amplitude of vibration of the cantilever with the AC voltage was also established, as expected, together with the increasing independence of the signal of the driving voltage using the second frequency of the resonance. The amplitude signal recorded for the gold part was obviously more intense due to its conductive nature. 4

Fig. S3 a) Amplitude image of the reference substrate (20x20 µm) acquired by changing selectively the AC voltage and the frequency of resonance at 1 V and 10 khz, 2 V and 10 khz, 2 v and 471.58 khz and 1 V and 471.58 khz, from the top to the bottom. b) The amplitude vs. distance profile on the X-axis and, c) the amplitude vs. distance profile on the Y-axis. The DC voltage was kept constant during the scan at -2 V tip bias. 5

S4 The sensitivity of the cantilever in and out of resonance to the DC forces could be compared by extracting the slope of the curves using a linear fit, concluding that working in resonance improved the sensitivity by a factor of approximately 4.8, Fig. S4a. On the other hand, changing DC bias from +2, to 0 and -2 V, changed the magnitude of the amplitude image as well as shifting the electrostatic phase image by almost 180º as expected if an electrostatic signal was recorded. This change was in concordance with the fact of changing from attractive to repulsive forces when the voltage changes, so it could be concluded that electrostatic signal was acquired, Fig. S4b and S4c. 6

Fig. S4 a) Amplitude vs. sample bias obtained from a tip bias of 2 V in AC (the second frequency of resonance of the cantilever, 471.58 khz) voltage and then changing to a DC voltage on the gold of the substrate of reference. b) Amplitude response and c) phase images of 20x20 µm from the substrate of reference acquired in EFM mode with a fixed tip bias of 2 V in AC and working in resonance. 7

S5 The results of another analyzed area of the sample are showed in Figure S5, where S5a is the topography of the scanned area, S5b is the bimodal amplitude image, S5c is the electrostatic amplitude image and S5d is a comparison of both Bimodal and EFM profiles. In the case of the Bimodal representing the amplitude response (Fig. S5b), the main fiber core showed differentiated regions, meaning that possessed uneven mechanical properties, while in EFM amplitude image (Fig. S5c) a more uniform contrast was spotted. Amplitude profiles can be used to observe that those mentioned regions of the fiber where the ones that differed when signals were overlapped. A zoomed in region of the fiber was included in Figure S5e and Figure S5f in order to truly distinguish the uneven mechanical properties of the fiber core. In this situation, we can interpret the data as a mixture of mechanical and electrical response, respect to the previous area analyzed. 8

Fig. S5 Images 2x2 µm corresponding to a) topography, amplitude response of b) Bimodal mode and c) EFM mode and, d) height and amplitude profiles obtained from Bimodal and EFM modes. e) and f) Zoomed of the EFM mode image indicated with a red-dashed square and bimodal mode indicated with a blue-dashed square, respectively. S6 To prove the bi-directionality of the effect, the substrate of reference was scanned using Bimodal mode. Two experiments were carried out, firstly, the tip was placed over the gold stripe and the sample bias was sequentially changed from -5 V to +5 V in DC at a 20 V/s of rate while scanning in Bimodal (Fig. S6a). Secondly, different voltages in DC were used to scan the substrate of reference, ranging from -2 V to +2 V in DC (Fig. S6b). 9

Fig. S6 a) Phase and amplitude response vs. sample bias plots in Bimodal acquired from the gold strip of the substrate of reference, the AC voltage was fixed at the second frequency of resonance of the cantilever (471.58 khz). b) Amplitude image 20x20 µm of the substrate of reference acquired by changing sequentially the voltage values in DC. 10

S7 In order to clarify the contribution of the interactions from electrostatic into Bimodal images, we performed an additional set of experiments over a Bimodal test sample. The test sample consisted of a blend of poly(styrene) (PS) and a polyolefin elastomer (PE) with Young s modulus of 2 GPa and 0.1 GPa, respectively (PS-LDPE-12M from Bruker). The sample was scanned connected to the DC generator of the AFM to obtain the Bimodal AFM (Fig. S7a and Fig. S7b). While performing the Bimodal images, the DC bias applied to the sample was changed, from +7VDC, to 0VDC and -7VDC, as denoted by green and red dashed lines of Fig. S7a. Bimodal phase image (Fig. S7b) denoted that it was barely affected by the electrostatic contributions due to the dielectric nature of the sample, thus no contributions from trapped charge inside the sample or by electrostatic interactions could be concluded. Fig. S7 a) Topography and, b) Bimodal phase image of the proposed test PS-LDPE-12M. Bimodal phase image reveals the different mechanical properties of the sample. Dots correspond to the softer regions of PE and the background to the PS. Upon different applied DC bias, no 11

change in the Bimodal phase was observed, confirming that this image was not affected for such applied bias. 12