PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM 3k Rads(Si) 3. 3.4A TO-257AA Description IR HiRel R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 9MeV/(mg/cm 2 ). Their combination of very low R DS(on) and faster switching times reduces power loss and increases power density in today s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features Low R DS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight ESD Rating: Class 2 per MIL-STD-75, Method 2 Absolute Maximum Ratings Parameter Units I D @ V GS = 2V, T C = 25 C Continuous Drain Current 3.4 I D @ V GS = 2V, T C = C Continuous Drain Current 2. A I DM Pulsed Drain Current 3.6 P D @T C = 25 C Maximum Power Dissipation 75 W Linear Derating Factor.6 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 97 mj I AR Avalanche Current 3.4 A E AR Repetitive Avalanche Energy 7.5 mj dv/dt Peak Diode Recovery dv/dt 8. V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range Pckg. Mounting Surface Temp. 3 (.63 in. /.6mm from case for s) C Weight 4.3 (Typical) g For Footnotes refer to the page 2. 26-9-2
Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D =.ma BV DSS / T J Breakdown Voltage Temp. Coefficient.5 V/ C Reference to 25 C, I D =.ma Static Drain-to-Source On-State R DS(on) 3. V GS = 2V, I D = 2.A Resistance V GS(th) Gate Threshold Voltage 2. 4. V V DS = V GS, I D =.ma Gfs Forward Transconductance 3.7 S V DS = 5V, I D = 2.A I DSS Zero Gate Voltage Drain Current V DS = 48V, V GS = V µa 25 V DS = 48V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = 2V na Gate-to-Source Leakage Reverse - V GS = -2V Q G Total Gate Charge 52 I D = 3.4A Q GS Gate-to-Source Charge 4 nc V DS = 3V Q GD Gate-to-Drain ( Miller ) Charge 7 V GS = 2V t d(on) Turn-On Delay Time 25 V DD = 3V tr Rise Time 7 I D = 3.4A ns t d(off) Turn-Off Delay Time 44 R G = 7.5 t f Fall Time 7 V GS = 2V Ls +L D Total Inductance 6.8 nh Measured from Drain lead (6mm /.25 in from package) to Source lead (6mm/.25 in from package) with Source wire internally bonded from Source pin to Drain pad C iss Input Capacitance 267 V GS = V C oss Output Capacitance 79 pf V DS = 25V C rss Reverse Transfer Capacitance. ƒ =.MHz R G Gate Resistance. ƒ =.MHz,open drain Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) 3.4 I SM Pulsed Source Current (Body Diode) 3.6 A V SD Diode Forward Voltage.2 V T J = 25 C,I S = 3.4A, V GS = V t rr Reverse Recovery Time 74 ns T J = 25 C, I F = 3.4A, V DD 5V Q rr Reverse Recovery Charge 2. µc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case.67 C/W R JA Junction-to-Ambient 8 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = 5V, starting T J = 25 C, L = 6.7mH, Peak I L = 3.4A, V GS = 2V I SD 3.4A, di/dt 56A/µs, V DD 6V, T J 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with V GS Bias. 2 volt V GS applied and V DS = during irradiation per MIL-STD-75, Method 9, condition A. Total Dose Irradiation with V DS Bias. 48 volt V DS applied and V GS = during irradiation per MlL-STD-75, Method 9, condition A. 2 26-9-2
Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation Parameter Radiation Characteristics IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Up to 3 krads (Si) Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D =.ma V GS(th) Gate Threshold Voltage 2. 4. V V DS = V GS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - na V GS = -2V I DSS Zero Gate Voltage Drain Current µa V DS = 48V, V GS = V R DS(on) R DS(on) Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Min. Max. 3. V GS = 2V, I D = 2.A 3. V GS = 2V, I D = 2.A V SD Diode Forward Voltage.2 V V GS = V, I D = 3.4A Part numbers IRHY67C3CM and IRHY63C3CM IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm 2 )) Energy (MeV) Range (µm) V DS (V) @VGS=V @VGS=-4V @VGS=-2V @VGS=-2V Kr 32.4 679 83.3 6 6 6 6 Xe 56.2 6 83.5 6 6 6 Au 89.5 555 84 6 6 8 VDS 6 4 2 Kr Xe Au -5 - -5-2 VGS For Footnotes, refer to the page 2. Fig a. Typical Single Event Effect, Safe Operating Area 3 26-9-2
C, Capacitance (pf) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) VGS TOP 5V 2V V 8.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V 2V V 8.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V. 4.5V 2µs PULSE WIDTH, Tj = 25 C.. V DS, Drain-to-Source Voltage (V) 2µs PULSE WIDTH, Tj = 5 C.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I D = 3.4A 2. T J = 5 C T J = 25 C.5.. V DS = 5V 2 s PULSE WIDTH 3 4 5 6 7 8 V GS, Gate-to-Source Voltage (V).5 V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 2 6 V GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 6 I D = 3.4A V DS = 48V V DS = 3V V DS = 2V 2 C iss 2 8 8 4 C oss C rss V DS, Drain-to-Source Voltage (V) 4 FOR TEST CIRCUIT SEE FIGURE 3 4 8 2 6 2 24 28 32 36 4 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 4 26-9-2
I SD, Reverse Drain Current (A) I D, Drain Current (A) I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) s T J = 5 C T J = 25 C ms. V GS = V..2.4.6.8..2.4.6 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage. ms Tc = 25 C Tj = 5 C DC Single Pulse. V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 3 2 Fig a. Switching Time Test Circuit 25 5 75 25 5 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms D =.5 Thermal Response ( Z thjc )...2..5.2. SINGLE PULSE ( THERMAL RESPONSE ) E-5.... t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 26-9-2
E AS, Single Pulse Avalanche Energy (mj) 2 6 I D TOP.5A 2.2A BOTTOM 3.4A 2 8 4 Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS 25 5 75 25 5 Starting T J, Junction Temperature ( C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current tp I AS Fig 2b. Unclamped Inductive Waveforms Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6 26-9-2
Case Outline and Dimensions TO-257AA BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR HiRel Headquarters: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) 252-75 IR HiRel Leominster: 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 IR HiRel San Jose: 252 Junction Avenue, San Jose, California 9534, USA Tel: (48) 434-5 Data and specifications subject to change without notice. 7 26-9-2
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