BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

Similar documents
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

NSQA6V8AW5T2 Series Transient Voltage Suppressor

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

MBRA320T3G Surface Mount Schottky Power Rectifier

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m


NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

MBRA320T3G Surface Mount Schottky Power Rectifier

MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

MUN5311DW1T1G Series.

MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in

MMUN2111LT1G, SMMUN21xxLT3G. NSVMMUN2111LT1G Series. Bias Resistor Transistors

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor

MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70

MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals

MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon

BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK

BC856ALT1G Series. General Purpose Transistors. PNP Silicon

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers

BC846BM3T5G. General Purpose Transistor. NPN Silicon

MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection

BC857BTT1G. General Purpose Transistor. PNP Silicon

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features

NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators

MMBT5087L. Low Noise Transistor. PNP Silicon

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

SMF5.0AT1G Series, SZSMF5.0AT1G Series. 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package

MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS

1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package

MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS

BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

1SMA10CAT3G Series, SZ1SMA10CAT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

Transcription:

BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low.5 (Typ) @ I F = madc AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (T J = 5C unless otherwise noted) Rating Symbol alue Unit Reverse oltage R Forward Power Dissipation @ T A = 5C Derate above 5C Thermal Resistance (Note ) Junction-to-Ambient (Note ) P F 5.8 R JA 58 mw mw/c C/W Forward Current (DC) I F Max ma Non Repetitive Peak Forward Current t p < msec Repetitive Peak Forward Current Pulse Wave = sec, Duty Cycle = 66% I FSM 6 I FRM Junction Temperature T J 55 to +5 C Storage Temperature Range T stg 55 to +5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR 4 @ Minimum Pad.. FR 4 @. x. inch Pad. ma ma OLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES ANODE 5C M CASE 8 STYLE 9 CATHODE ANODE MARKING DIAGRAM 5C M = Device Code = Date Code = Pb Free Package (*Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Device Package Shipping BAT54CLTG SBAT54CLTG BAT54CLTG ORDERING INFORMATION, /, /, / For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, November, Rev. 8 Publication Order Number: BAT54CLT/D

BAT54CLTG, SBAT54CLTG ELECTRICAL CHARACTERISTICS (T A = 5C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown oltage (I R = A) Total Capacitance ( R =., f =. MHz) Reverse Leakage ( R = 5 ) (I F =. madc) (I F = madc) (I F = madc) Reverse Recovery Time (I F = I R = madc, I R(REC) =. madc, Figure ) (I F =. madc) (I F = madc) (BR)R C T 7.6 I R.5...4.4.5.5.8 t rr 5..9..5.4 pf A ns 8 + k. F H I F. F t r t p T % I F t rr T 5 OUTPUT PULSE GENERATOR DUT 5 INPUT SAMPLING OSCILLOSCOPE R 9% INPUT SIGNAL I R i R(REC) = ma OUTPUT PULSE (I F = I R = ma; measured at i R(REC) = ma) Notes:. A. k variable resistor adjusted for a Forward Current (I F ) of ma. Notes:. Input pulse is adjusted so I R(peak) is equal to ma. Notes:. t p» t rr Figure. Recovery Time Equivalent Test Circuit

BAT54CLTG, SBAT54CLTG 5C I F, FORWARD CURRENT (ma). 5C 85C 5C 4C 55C......4.5, FORWARD OLTAGE (OLTS).6 Figure. I R, REERSE CURRENT (A)... T A = 5C T A = 5C T A = 85C T A = 5C. 5 5 5 R, REERSE OLTAGE (OLTS) Figure. Leakage Current 4 C T, TOTAL CAPACITANCE (pf) 8 6 4 5 5 5 R, REERSE OLTAGE (OLTS) Figure 4. Total Capacitance

BAT54CLTG, SBAT54CLTG PACKAGE DIMENSIONS (TO 6) CASE 8 8 ISSUE AP A E A D e b HE SEE IEW C L L IEW C c.5 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89...5.4.44 A..6....4 b.7.44.5.5.8. c.9..8..5.7 D.8.9.4..4. E...4.47.5.55 e.78.9.4.7.75.8 L....4.8. L.5.54.69.4..9 H E..4.64.8.94.4 STYLE 9: PIN. ANODE. ANODE. CATHODE SOLDERING FOOTPRINT*.95.7.95.7.9.5.8. SCALE :..79 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: 675 75 or 8 44 86 Toll Free USA/Canada Fax: 675 76 or 8 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 79 9 Japan Customer Focus Center Phone: 8 587 5 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAT54CLT/D

Mouser Electronics Authorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: BAT54CLT