TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information

Similar documents
TAT Ω phemt Adjustable Gain RF Amplifier

TAT Ω 5V MHz RF Amplifier

TAT8858-EB. CATV Infrastructure Push-Pull Amplifier. Applications. Ordering Information

TQP3M9008 High Linearity LNA Gain Block

TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information

TQP DC-6 GHz Gain Block

TQP3M9035 High Linearity LNA Gain Block

Applications Ordering Information

WJA V Active-Bias InGaP HBT Gain Block

TQP DC-6 GHz Gain Block

QPB7400SR QPB7400PCK. CATV 75Ω Adjustable Low Gain (9 11dB) RF Amplifier. Product Overview. Key Features. Functional Block Diagram.

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description

TQP7M W High Linearity Amplifier. Applications. Ordering Information

TQP3M9018 High Linearity LNA Gain Block

TGV2561-SM GHz VCO with Divide by 2

TAT6254C Fiber To The Home RF Amplifier MHz

TGL2201-SM T/R. Wideband Dual Stage VPIN Limiter. Applications. Ordering Information. Part No. ECCN Description

TQP3M9028 High Linearity LNA Gain Block

TQP7M W High Linearity Amplifier. Applications. Ordering Information

ECG055B-G InGaP HBT Gain Block

Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier

TGA4533-SM K-Band Power Amplifier

TAT7469 CATV 75 Ω phemt Dual RF Amplifier

TQP3M9008 High Linearity LNA Gain Block

TQL9093. Ultra low noise, Flat Gain LNA. Applications. Product Features. Functional Block Diagram. General Description.

TQP DC 6 GHz Gain Block

TQP4M9083 High Linearity 7-Bit, 31.75dB Digital Step Attenuator

AH323-G. 2W High Linearity 5V 2-Stage Amplifier. Applications. Product Features. Functional Block Diagram. General Description.

TAT MHz Variable Gain Return Path Amplifier

TQP GHz 8W High Linearity Power Amplifier

QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information

TQL9065 Ultra Low Noise 2-Stage Bypass LNA

QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGA2760-SM GHz Power Amplifier

TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier

TGA3500-SM 2-12 GHz Driver Amplifier

ECP100D 1Watt, High Linearity InGaP HBT Amplifier

ML485-G. Applications. Functional Block Diagram. Product Features. General Description. Pin Configuration. Ordering Information

QPL9096 Ultra Low-Noise, Bypass LNA

TGA3503-SM 2-30 GHz GaAs Wideband Gain Block

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

ECG002 InGaP HBT Gain Block

TGM2543-SM 4-20 GHz Limiter/LNA

TGA2818-SM S-Band 30 W GaN Power Amplifier

TQP MHz Power Amplifier. General Description. Product Features. Functional Block Diagram. Ordering Information

AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)

TGA3504-SM 2-30 GHz GaAs Wideband Gain Block

TGP2107-SM 6 to 18 GHz 6-Bit Digital Phase Shifter ( V C )

T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor

TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier

TGA2710-SM 8W GHz Power Amplifier

TGA2567-SM 2 20 GHz LNA Amplifier

TAT2814A DOCSIS 3.0 / Edge QAM Variable Gain Amplifier

TQP9113* 1 W Linear Amplifier. General Description. Product Features. Applications. Functional Block Diagram. Ordering Information

MHz SAW Filter

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

MHz SAW Filter

QPL9065SR. Ultra Low-Noise 2-Stage Bypass LNA. Product Description. Product Features. Applications. Functional Block Diagram. Ordering Information

QPB3311SR. 15 db Return Path Amplifier MHz. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGA2704-SM 8W 9-11 GHz Power Amplifier

TQM EVB B7 BAW Duplexer

TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier

QPC7336TR13. 45MHz to 1218MHz Variable Equalizer. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

TQM8M GHz Digital Variable Gain Amplifier

TGA4906-SM 4 Watt Ka-Band Power Amplifier

AH312-S8G. Not Recommended for New Designs. Applications. Product Features. Functional Block Diagram. General Description.

TGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc)

TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier

RFSW1012SR. Broadband SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Ordering Information

TGA2612-SM 6 12 GHz GaN LNA

QPB9325SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

T2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor

TQP4M9071 High Linearity 6-Bit, 31.5 db Digital Step Attenuator

QPB9318 Dual-Channel Switch LNA Module

TQP3M9039-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description

TQM EVB. Not for New Designs BC14/BC1/B25 BAW Duplexer. Applications. Functional Block Diagram. Product Features. General Description

TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier

QPD W, 48 V GHz GaN RF Power Transistor

TQM8M9077 PCB GHz Digital Variable Gain Amplifier. Applications. Product Features. Functional Block Diagram. General Description

TGA4532 K-Band Power Amplifier

TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier

TGA FL 20W Ku-Band GaN Power Amplifier

TQP9309SR. High Efficiency 0.5W Small Cell Power Amplifier. General Description. Product Features. Functional Block Diagram.

TQM GHz ¼ W Digital Variable Gain Amplifier

AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)

QPA1003P 1 8 GHz 10 W GaN Power Amplifier

TQP3M9041-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description

TGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information

QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.

QPA GHz GaAs Low Noise Amplifier

TGL2226-SM GHz 6-Bit Attenuator

TQP3M9040-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description

QPB2318SR. 15 db Balanced Return Path Amplifier MHz. Product Overview. Functional Block Diagram. Ordering Information

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty

GHz BAW Filter

Transcription:

Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block Diagram Gain, return loss and bias externally adjustable On-chip active bias for consistent bias current and repeatable performance DC MHz bandwidth Low noise: typical NF < db to MHz Flexible 5 V to 8 V biasing I DD (5V) = ma typical in application circuit 9 db typical gain in application circuit +4 dbm typical OIP3 +xx dbm typical PdB Low distortion: CSO -66 dbc, CTB -78 dbc ( dbmv/ch at input, 8 ch NTSC flat) phemt device technology SOT-89 package RF IN GND RFOUT External feedback resistor allowing gain and return loss adjustment General Description The is a low cost RF amplifier designed for applications from DC to MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers used in cable television applications such as optical receivers and low noise front ends. The has features allowing a great deal of designin flexibility. Gain and return loss are adjustable with an external feedback resistor. An internal bias circuit mitigates the effect of temperature and process variation and an external resistor may be used to adjust the bias current to optimize distortion or noise performance. There are no on-chip capacitors limiting the low freq response which extends down to DC. The is fabricated using 6-inch GaAs phemt technology to optimize performance and cost. It provides excellent gain and return loss consistency inherent to the phemt process. Pin Configuration Pin # Symbol RF IN GND 3 RF OUT 4 GND PADDLE Ordering Information Part No. -EB Standard T/R size = pieces on a 7 reel. Description 75 High linearity phemt amplifier (lead-free/rohs compliant SOT-89 Pkg) Amplifier evaluation board Preliminary Data Sheet: Rev B /4/ - of 8 - Disclaimer: Subject to change without notice

Specifications Absolute Maximum Ratings Parameter Storage Temperature Device Voltage Thermal Resistance (jnc. to case) jc Rating -65 to +5 o C +TBD V TBD o C/W Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units V cc 5 8 V I cc ma T J (for > 6 hours MTTF) TBD o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: 5ºC case temp, +5V Vsupply, DC to MHz, kω feedback resistor Parameter Conditions Min Typical Max Units Operational Frequency Range DC MHz Gain 9 db Gain Flatness +/-.7 db Noise Figure at GHz. db Input Return Loss 8 db Output Return Loss 8 db Output PdB +xx dbm Output IP3 See Note. +4 dbm Output IP See Note. +6 dbm CSO See Note. -66 dbc CTB See Note. -78 dbc Idd ma Notes:. At -7 dbm/tone at input.. dbmv/ch at input, 8 ch flat NTSC 3. Electrical specifications are measured at specified test conditions. 4. Specifications are not guaranteed over all recommended operating conditions. Preliminary Data Sheet: Rev B /4/ - of 8 - Disclaimer: Subject to change without notice

Reference Design DC- MHz +5V C6 L4 C5 R C4 R C3 L3 R5 IN C L U L R4 C 3 OUT R3 Notes:. See PC Board Layout, page 6 for more information Bill of Material Ref Des Value Description Manufacturer Part Number U Amplifier, SOT-89 TriQuint R kω Thick Film Res., 4, % various R Ω Thick Film Res., 6 various R3 N/L R4 Ω Thick Film Res., 4 various R5 75 kω Thick Film Res., 4, % various C, C. uf Ceramic Cap, 63, X7R, 6V, % various C3, C4. uf Ceramic Cap, 4, X7R, 6V, % various C5, C6. uf Ceramic Cap, 63, X7R, 6V, % various L, L 4.7 nh Ceramic Wire-Wound Ind, 4, 5% various L3 88 nh Ferrite Ind., Vertical Wire-Wound, 6, % various L4 9 nh Ferrite Ind., Vertical Wire-Wound, 8, % various Preliminary Data Sheet: Rev B /4/ - 3 of 8 - Disclaimer: Subject to change without notice

Application Board Typical Performance Case temperature noted on graphs. Vsupply = 5V. S (db) CSO & CTB (dbc) 5 4 3 9 8 7 6 5 5 55 6 65 7 75 8 85 9 95 +85 C +5 C -4 C Gain 35 65 975 3 CSO & CTB 8 ch NTSC @ + dbmv/ch FLAT Input CSO +85 C CSO +5 C CSO -4 C CTB -4 C CTB +5 C CTB +85 C 3 4 5 6 3 S (db) S (db) 5 5 5 3 35 4 5 5 5 3 35 4 Noise Figure +85 C +5 C -4 C Input Return Loss 35 65 975 3 Output Return Loss +85 C +5 C -4 C 35 65 975 3 NF (db).5.5 +5 C.5 35 65 975 3 Preliminary Data Sheet: Rev B /4/ - 4 of 8 - Disclaimer: Subject to change without notice

Detailed Device Description Bias Network 3 3 The was designed to be a low cost general purpose amplifier suitable for a wide range of applications. The is a high gain cascode amplifier with no internal shunt feedback. large 3 Cascode An on-chip biasing network sets the operating conditions for the FETs. This network stabilizes bias current against changes in temperature as well as against the normal process variations expected from wafer to wafer. Stabilized bias current will lead to more consistent RF performance. Simplified RFIC Schematic APPLICATION SCHEMATIC Customers may set the gain and return loss of their amplifier by selecting an appropriate external feedback resistor. Feedback Resistor TAT 7457.uF Reducing the value of the feedback resistor will reduce the gain and lower the input and output impedances. Low noise TIA designers may set the value of feedback to a high value (>k ohm) for best performance. FIG. Biasing through VNA Bias Tee 3 Open Loop Gain in 75 ohms S (db) 5 5 DB( S(,) ) (L) No Feedback DB( S(,) ) (R) No Feedback DB( S(,) ) (R) No Feedback -5 - -5 - Return Losses (db) There are no on-chip capacitors that limit the low frequency response, enabling the frequency response to extend to DC. The open loop gain (no external feedback) and high frequency gain performance is shown in the plot to the left. 5 5v, 5mA -5 4 6 Frequency (GHz) -3 Biasing Options for Improved Performance Distortion and noise performance may be optimized with simple changes to the application circuit. Preliminary Data Sheet: Rev B /4/ - 5 of 8 - Disclaimer: Subject to change without notice

Noise performance may be improved by adding a large resistor R3 of approximately kω to ground. This resistor will reduce the bias current and improve noise. Best distortion occurs on a 6v supply; however for improved distortion on a 5v supply, bias current may be increased by adding a large pull up resistor R5 of approximately 75 kω in parallel with the feedback capacitor. Applications Information PC Board Layout Core is.6 FR-4, є r = 4.7. Metal layers are -oz copper. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, Refer to http://www.triquint.com/ Mechanical Information Package Information and Dimensions This package is lead-free/rohs-compliant. The plating material on the leads is % Matte Tin. It is compatible with both lead-free (maximum 6 C reflow temperature) and lead (maximum 45 C reflow temperature) soldering processes. The will be marked with a designator and an alphanumeric lot code. Preliminary Data Sheet: Rev B /4/ - 6 of 8 - Disclaimer: Subject to change without notice

Mounting Configuration Notes:. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35 mm (#8/.35 ) diameter drill and have a final, plated thru diameter of.5 mm (. ).. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. All dimensions are in millimeters (inches). Angles are in degrees. Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-, Lead free solder, 6 C. ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class TBD Passes TBD V min. Human Body Model (HBM) JEDEC Standard JESD-A4 Class TBD Passes TBD V min. Charged Device Model (CDM) JEDEC Standard JESD-C This part is compliant with EU /95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating Level x at +6 C convection reflow The part is rated Moisture Sensitivity Level x at TBD C per JEDEC standard IPC/JEDEC J-STD-. Preliminary Data Sheet: Rev B /4/ - 7 of 8 - Disclaimer: Subject to change without notice

Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +.77.56.4498 Email: info-sales@tqs.com Fax: +.53.56.485 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Data Sheet: Rev B /4/ - 8 of 8 - Disclaimer: Subject to change without notice