Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4 Emitter Base Voltage V EBO. Collector Current Continuous I C madc Collector Current Peak (Note ) I CM 8 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR Board (Note ) @ T A = C Derate above C P D.8 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 6 C/W Total Device Dissipation Alumina Substrate, (Note ) @ T A = C Derate above C P D.4 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 4 C/W Junction and Storage Temperature T J, T stg to + C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. FR =...6 in.. Alumina =.4..4 in. 99.% alumina.. Reference SOA curve. BASE COLLECTOR EMITTER SOT (TO6) CASE 8 STYLE 6 MARKING DIAGRAM A M A = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT, / Tape & Reel G SOT, / Tape & Reel (PbFree) MMBT96LT SOT, / Tape & Reel MMBT96LTG SOT (PbFree), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, July, Rev. 6 Publication Order Number: /D
ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V (BR)CEO (I C =. madc, I B = ) 4 Collector Base Breakdown Voltage (I C = Adc, I E = ) Emitter Base Breakdown Voltage (I E = Adc, I C = ) Base Cutoff Current (V CE =, V EB =. ) Collector Cutoff Current (V CE =, V EB =. ) (BR)CBO 4 V (BR)EBO. I BL I CEX nadc nadc ON CHARACTERISTICS (Note 4) DC Current Gain (I C =. madc, V CE =. ) (I C =. madc, V CE =. ) (I C = madc, V CE =. ) (I C = madc, V CE =. ) (I C = madc, V CE =. ) H FE 6 8 6 Collector Emitter Saturation Voltage (I C = madc, I B =. madc) (I C = madc, I B =. madc) Base Emitter Saturation Voltage (I C = madc, I B =. madc) (I C = madc, I B =. madc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I C = madc, V CE =, f = MHz) Output Capacitance (V CB =., I E =, f =. MHz) Input Capacitance (V EB =., I C =, f =. MHz) Input Impedance (I C =. madc, V CE =, f =. khz) Voltage Feedback Ratio (I C =. madc, V CE =, f =. khz) Small Signal Current Gain (I C =. madc, V CE =, f =. khz) Output Admittance (I C =. madc, V CE =, f =. khz) V CE(sat) V BE(sat).6..4.8.9 f T C obo 4. C ibo h ie. h re. h fe 4 h oe. 6 MHz pf pf k X 4 mhos Noise Figure (I C = Adc, V CE =., R S =. k, f =. khz) NF 4. db SWITCHING CHARACTERISTICS Delay Time Rise Time (V CC =., V BE =., I C = madc, I B =. madc) t d t r Storage Time (V CC =., I C = madc, t s Fall Time I B = I B =. madc) t f 4. Pulse Test: Pulse Width s, Duty Cycle.%. ns ns
f +. V < ns k V +9. V < ns k V.6 V ns DUTY CYCLE = % C S < 4 pf* < t < s DUTY CYCLE = % t.9 V N96 C S < 4 pf* * Total shunt capacitance of test jig and connectors Figure. Delay and Rise Time Equivalent Test Circuit Figure. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = C T J = C CAPACITANCE (pf)...... C obo C ibo......... 4 REVERSE BIAS (VOLTS) Figure. Capacitance Q, CHARGE (pc). V CC = 4 V I C /I B = Q T.... Figure 4. Charge Data Q A TIME (ns). V t d @ V OB = V..... Figure. Turn On Time I C /I B = t r @ V CC =. V V 4 V t, FALL TIME (ns) I C /I B = I C /I B =..... Figure 6. Fall Time V CC = 4 V I B = I B
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE =., T A = C, Bandwidth =. Hz) NF, NOISE FIGURE (db). 4... SOURCE RESISTANCE = I C =. ma SOURCE RESISTANCE = I C =. ma SOURCE RESISTANCE =. k I C = A NF, NOISE FIGURE (db) 8 6 4 f =. khz I C =. ma I C =. ma I C = A. SOURCE RESISTANCE =. k I C = A I C = A...4.. 4. 4 f, FREQUENCY (khz)...4.. 4. 4 R g, SOURCE RESISTANCE (k OHMS) Figure. Figure 8. h PARAMETERS (V CE =, f =. khz, T A = C) h fe, DC CURRENT GAIN h oe, OUTPUT ADMITTANCE ( mhos).................... Figure 9. Current Gain Figure. Output Admittance h ie, INPUT IMPEDANCE (k OHMS)................... h, VOLTAGE FEEDBACK RATIO (X 4 re )................. Figure. Input Impedance Figure. Voltage Feedback Ratio 4
h FE, DC CURRENT GAIN (NORMALIZED)...... TYPICAL STATIC CHARACTERISTICS T J = + C + C C V CE =. V........... Figure. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)..8 I C =. ma.6.4...... T J = C ma ma ma.......... I B, BASE CURRENT (ma) Figure 4. Collector Saturation Region V, VOLTAGE (VOLTS)..8.6.4. T J = C V BE(sat) @ I C /I B = V CE(sat) @ I C /I B = V BE @ V CE =. V, TEMPERATURE COEFFICIENTS (mv/ C)..... VC FOR V CE(sat) VB FOR V BE(sat) + C TO + C C TO + C + C TO + C C TO + C... V. 4 6 8 4 6 8 Figure. ON Voltages Figure 6. Temperature Coefficients
s ms ms ms. Thermal Limit IC (A). Single Pulse Test @ T A = C... V CE () Figure. Safe Operating Area 6
PACKAGE DIMENSIONS SOT (TO6) CASE 88 ISSUE AN A E A D e b HE SEE VIEW C L L VIEW C c. NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 8 THRU AND 9 OBSOLETE, NEW STANDARD 88. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89....4.44 A..6....4 b..44...8. c.9..8... D.8.9.4..4. E...4.4.. e.8.9.4...8 L....4.8. L..4.69.4..9 H E..4.64.8.94.4 STYLE 6: PIN. BASE. EMITTER. COLLECTOR.9. SOLDERING FOOTPRINT*.9..9..8. SCALE :..9 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 88 USA Phone: 4889 or 84486 Toll Free USA/Canada Fax: 48899 or 84486 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8898 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan Phone: 88 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. /D