5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES 5A,700V, R DS(on)(typ.) =0.8 @V GS =10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability ORDERING INFORMATION Part No. Package Marking Hazardous Substance Control Packing D TO-252-2L D Halogen free Tube DTR TO-252-2L D Halogen free Tape&reel MJ TO-251J-3L Halogen free Tube MN TO-251N-3L 5N70MN Halogen free Tube F TO-220F-3L F Halogen free Tube MU TO-251U-3L MU Halogen free Tube ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25 C) Ratings Characteristics Symbol D MJ/MU MN F Unit Drain-Source Voltage V DS 700 V Gate-Source Voltage V GS ±30 V Drain Current T C=25 C I D 5.0 T C=100 C 3.2 Drain Current Pulsed I DM 18 A Power Dissipation(T C=25 C) -Derate above 25 C P D 58 60 60 24 W 0.46 0.48 0.48 0.19 W/ C A http: //www.silan.com.cn Page 1 of 10
Ratings Characteristics Symbol D MJ/MU MN F Unit Single Pulsed Avalanche Energy (Note 1) E AS 180 mj Operation Junction Temperature Range T J -55~+150 C Storage Temperature Range T stg -55~+150 C THERMAL CHARACTERISTICS Ratings Characteristics Symbol D MJ/MU MN F Unit Thermal Resistance, Junction-to-Case R θjc 2.16 2.08 2.08 5.21 C/W Thermal Resistance, Junction-to-Ambient R θja 62.00 62.00 62.00 62.50 C/W ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25 C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BV DSS V GS=0V, I D=250µA 700 -- -- V Drain-Source Leakage Current I DSS V DS=700V, V GS=0V -- -- 1.0 µa Gate-Source Leakage Current I GSS V GS=±30V, V DS=0V -- -- ±100 na Gate Threshold Voltage V GS(th) V GS=V DS, I D=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance R DS(on) V GS=10V, I D=2.5A -- 0.8 0.9 Input Capacitance C iss -- 360 -- V DS=100V, V GS=0V, Output Capacitance C oss -- 21 -- f=1.0mhz Reverse Transfer Capacitance C rss -- 1.9 -- pf Turn-on Delay Time t d(on) -- 9.47 -- V DD=350V, I D=5.0A, Turn-on Rise Time t r -- 26.3 -- V GS=10V, R G=24 ns Turn-off Delay Time t d(off) -- 57.9 -- (Note 2,3) Turn-off Fall Time t f -- 25.7 -- Total Gate Charge Q g V DS=560V, I D=5.0A, -- 19.2 -- Gate-Source Charge Q gs V GS=10V -- 2.45 -- nc Gate-Drain Charge Q gd (Note 2,3) -- 11.7 -- http: //www.silan.com.cn Page 2 of 10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current I S Integral Reverse P-N Junction -- -- 5.0 Pulsed Source Current I SM Diode in the MOSFET -- -- 18.0 A Diode Forward Voltage V SD I S=5.0A,V GS=0V -- -- 1.4 V Reverse Recovery Time T rr I S=5.0A,V GS=0V, -- 305 -- ns Reverse Recovery Charge Q rr di F/dt=100A/µs -- 2.3 -- µc Notes: 1. L=79mH,I AS=2.0A,V DD=100V, R G=25, starting T J=25 C; 2. Pulse Test: Pulse width 300μs,Duty cycle 2%; 3. Essentially independent of operating temperature. http: //www.silan.com.cn Page 3 of 10
TYPICAL CHARACTERISTICS http: //www.silan.com.cn Page 4 of 10
TYPICAL CHARACTERISTICS(continued) http: //www.silan.com.cn Page 5 of 10
TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT VDS VGS 10V Qg Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform VGS VDS RL VDD VDS 90% 10V RG DUT 10% VGS td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform VDS L BVDSS EAS = 1 2 LI AS 2 BVDSS BVDSS - VDD ID IAS 10V tp RG DUT VDD VDD ID(t) VDS(t) tp Time http: //www.silan.com.cn Page 6 of 10
PACKAGE OUTLINE TO-252-2L UNIT: mm L4 TO-251J-3L UNIT: mm http: //www.silan.com.cn Page 7 of 10
PACKAGE OUTLINE(continued) TO-251N-3L UNIT: mm TO-220F-3L UNIT: mm http: //www.silan.com.cn Page 8 of 10
PACKAGE OUTLINE(continued) TO-251U-3L UNIT: mm Φ1.30±0.1 2.1~2.9 6±0.2 9.62±0.3 Disclaimer : Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers! http: //www.silan.com.cn Page 9 of 10
Part No.: D/MJ/MN/F/MU Document Type: Datasheet Copyright: Website: http: //www.silan.com.cn Rev.: 1.8 1. Update the package information of TO-251J-3L 2. Delete the package outline of TO-220F-3L(2) Rev.: 1.7 1. Add the package information of TO-251U-3L Rev.: 1.6 1. Delete the package information of TO-251D-3L Rev.: 1.5 1. Add the package information of TO-251D-3L Rev.: 1.4 1. Modify the ordering information 2. Modify the package information of TO-252-2L Rev.: 1.3 1. Modify the package information Rev.: 1.2 1. Add the information of TO-220F-3L package Rev.: 1.1 1. Modify the description Rev.: 1.0 1. First release http: //www.silan.com.cn Page 10 of 10