STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T J = 175 C Minimized tail current V CE(sat) = 2.0 V (typ.) @ I C = 25 A 1 2 3 1 2 3 Tight parameters distribution Safe paralleling TO-247 TO-3P Low V F soft recovery co-packaged diode Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2, TAB) Microwave oven Resonant converters Description G (1) E (3) These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. Table 1. Device summary Order code Marking Package Packaging STGW28IH125DF G28IH125DF TO-247 Tube STGWT28IH125DF G28IH125DF TO-3P Tube February 2014 DocID025268 Rev 2 1/17 This is information on a product in full production. www.st.com 17
Contents Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)................................ 6 3 Test circuits.............................................. 11 4 Package mechanical data.................................... 12 5 Revision history........................................... 16 2/17 DocID025268 Rev 2
Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 1250 V I C Continuous collector current at T C = 25 C 60 A I C Continuous collector current at T C = C 30 A I (1) CP Pulsed collector current 120 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 C 60 A I F Continuous forward current at T C = C 30 A I FP(1) Pulsed forward current 120 A P TOT Total dissipation at T C = 25 C 375 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT 0.4 C/W R thjc Thermal resistance junction-case diode 1.47 C/W R thja Thermal resistance junction-ambient 50 C/W DocID025268 Rev 2 3/17
Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 1250 V V GE = 15 V, I C = 25 A 2 2.5 V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 25 A T J = 125 C 2.2 V GE = 15 V, I C = 25 A T J = 175 C 2.3 V GE = 15 V, I C = 50 A 2.65 I F = 25 A 1.2 1.6 I F = 50 A 1.45 I F = 25 A T J = 125 C 1.2 I F = 25 A T J = 175 C 1.2 V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma 5 6 7 V I CES Collector cut-off current (V GE = 0) V CE = 1250 V 25 μa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance - 2035 - pf C oes Output capacitance V CE = 25 V, f = 1 MHz, - 139 - pf C res V GE = 0 Reverse transfer capacitance - 52 - pf Q g Total gate charge - 114 - nc Q ge Gate-emitter charge V CC = 960 V, I C = 25 A, V GE = 15 V, see Figure 25-11 - nc Q gc Gate-collector charge - 69 - nc 4/17 DocID025268 Rev 2
Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(off) Turn-off delay time V CE = 600 V, I C = 25 A, - 128 - ns t f Current fall time R G = 10 Ω, V GE = 15 V, see - 82 - ns E (1) off Turn-off switching losses Figure 23-0.72 - mj t d(off) Turn-off delay time V CE = 600 V, I C = 25 A, - 132 - ns t f Current fall time R G = 10 Ω, V GE = 15 V, - 190 - ns E (1) off Turn-off switching losses T J = 175 C, see Figure 23-1.53 - mj 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions Min. Typ. Max. Unit E off (1) Turn-off switching losses V CC = 900 V, R G = 10 Ω, I C = 50 A, L = 500 μh, C snub = 330 nf, see Figure 24 V CC = 900 V, R G = 10 Ω, I C = 50 A, L = 500 μh, C snub = 330 nf, T J = 175 C, see Figure 24-230 - - 520 - μj 1. Turn-off losses include also the tail of the collector current. DocID025268 Rev 2 5/17
Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. case temperature Ptot (W) GIPG300120140946FSR IC (A) GIPG300120140951FSR 60 300 50 200 40 30 VGE 15V, TJ 175 C 20 10 VGE 15V, TJ 175 C 0 0 50 150 TC( C) Figure 4. Output characteristics (T J = 25 C) 0 0 50 150 TC( C) Figure 5. Output characteristics (T J = 175 C) IC (A) VGE=15V GIPG300120140955FSR 13V IC (A) GIPG300120145FSR VGE=15V 13V 80 80 60 11V 60 11V 40 20 9V 40 20 9V 7V 0 0 1 2 3 4 5 VCE(V) Figure 6. V CE(sat) vs. junction temperature 0 0 1 2 3 4 5 VCE(V) Figure 7. V CE(sat) vs. collector current VCE(sat) (V) 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 VGE= 15V GIPG300120141019FSR IC= 50A IC= 25A IC= 12.5A VCE(sat) (V) 3.0 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 VGE= 15V GIPG300120141024FSR TJ= 175 C TJ= 25 C TJ= -40 C 1.4-50 0 50 150 TJ( C) 1.2 0 10 20 30 40 50 IC(A) 6/17 DocID025268 Rev 2
Electrical characteristics Figure 8. Forward bias safe operating area Figure 9. Transfer characteristics IC (A) GIPG300120141043FSR 1 μs IC (A) 80 VCE=10V TJ=25 C GIPG300120141054FSR 10 1 Single pulse Tc= 25 C, TJ<= 175 C C = 25 C, VGE= 15V T 175 C; V 10 μs μs 1 ms 60 40 20 TJ=175 C 0.1 1 10 0 VCE(V) Figure 10. Diode V F vs. forward current 0 6 8 10 12 VGE(V) Figure 11. Normalized V GE(th) vs junction temperature VF (V) 2.4 2.2 2.0 TJ= 175 C TJ= 25 C GIPG300120141110FSR VGE(th) (norm) 1.1 1.0 GIPD281020131600FSR IC= 1mA VCE= VGE 1.8 1.6 0.9 1.4 1.2 TJ= -40 C 0.8 1.0 0.8 0.7 0.6 0 20 40 60 80 IF(A) Figure 12. Normalized V (BR)CES vs. junction temperature 0.6-50 0 50 150 TJ( C) Figure 13. Capacitance variation V(BR)CES (norm) 1.08 GIPG300120141121FSR C (pf) GIPG300120141124FSR IC= 2mA 0 Cies 1.0 Coes 10 Cres 0.9-50 0 50 150 TJ( C) 1 0.1 1 10 VCE(V) DocID025268 Rev 2 7/17
Electrical characteristics Figure 14. Gate charge vs. gate-emitter voltage Figure 15. Switching loss vs collector current VGE (V) 16 12 IC= 25A IGE= 1mA VCC= 960V GIPG300120141130FSR EOFF (μj) 2500 2000 VCC = 600V, VGE = 15V, RG = 10Ω TJ = 175 C GIPG300120141133FSR 1500 8 0 TJ = 25 C 4 500 0 0 20 40 60 80 120 Qg(nC) 0 0 10 20 30 40 50 IC(A) Figure 16. Switching loss vs gate resistance EOFF (μj) 2200 2000 1800 1600 1400 1200 0 800 600 VCC = 600 V, VGE = 15 V, IC = 25 A TJ = 175 C 400 0 10 20 GIPG300120141141FSR TJ = 25 C 30 40 RG(Ω) Figure 17. Switching loss vs temperature EOFF (μj) 1600 1400 1300 1200 1 0 900 800 700 VCC= 600V, VGE= 15V, RG= 10Ω, IC= 25A 600 10 40 70 130 GIPG300120141158FSR 160 TJ( C) Figure 18. Switching loss vs collector-emitter voltage Figure 19. Switching times vs. collector current EOFF (μj) 250 200 VGE= 15V, RG= 10Ω, IC= 25A GIPG300120141206FSR TJ= 175 C t (ns) TJ= 175 C, VGE= 15V, RG= 10Ω, VCC= 600V tdoff GIPG300120141346FSR 150 tf 50 TJ= 25 C 0 250 450 650 850 VCE(V) 10 0 10 20 30 40 50 IC(A) 8/17 DocID025268 Rev 2
Electrical characteristics Figure 20. Switching times vs. gate resistance t (ns) TJ= 175 C, VGE= 15V, IC= 25A, VCC= 600V GIPG300120141353FSR tdoff tf 10 0 10 20 30 40 RG(Ω) DocID025268 Rev 2 9/17
Electrical characteristics Figure 21. Thermal impedance for IGBT K d=0.5 ZthTO2T_A 0.2 0.1 10-1 0.05 0.02 0.01 10-2 Single pulse 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 22. Thermal impedance for diode 10/17 DocID025268 Rev 2
Test circuits 3 Test circuits Figure 23. Test circuit for inductive load switching Figure 24. Test circuit for capacitive load switching Csnub AM01504v1 AM17096v2 Figure 25. Gate charge test circuit Figure 26. Switching waveform 90% VG 10% 90% VCE Tr(Voff) 10% Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 10% AM01505v1 AM01506v1 DocID025268 Rev 2 11/17
Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 27. TO-247 drawing 0075325_G 12/17 DocID025268 Rev 2
Package mechanical data Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 5.70 DocID025268 Rev 2 13/17
Package mechanical data Figure 28. TO-3P drawing 8045950_A 14/17 DocID025268 Rev 2
Package mechanical data Table 9. TO-3P mechanical data Dim. mm Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.90 E 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 18.40 18.60 øp 3.10 3.30 Q 5 Q1 3.80 DocID025268 Rev 2 15/17
Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 20-Jan-2014 1 Initial release. 03-Feb-2014 2 Document status promoted form preliminary to production data. Updated Table 2: Absolute maximum ratings, Table 4: Static characteristics, Table 5: Dynamic characteristics, Table 6: IGBT switching characteristics (inductive load) and Table 7: IGBT switching characteristics (capacitive load). Inserted Section 2.1: Electrical characteristics (curves). Minor text changes. 16/17 DocID025268 Rev 2
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