Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.34 R DS(on) () at V GS = 4.5 V.4 I D (A) 35 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Fully lead (Pb)-free device Thin.9 mm height Material categorization: for definitions of compliance please see /doc?9992 D D 8 mm Top View 8. mm 4 S Bottom View 3 S 2 S G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS Gate-Source Voltage V GS ± 2 V Continuous Drain Current 35 I D 78 Continuous Source Current (Diode Conduction) I S 24 A Pulsed Drain Current a I DM 2 Single Pulse Avalanche Current I AS 68 L =. mh Single Pulse Avalanche Energy E AS 23 mj Maximum Power Dissipation 36 P D 45 W Operating Junction and Storage Temperature Range T J, T stg -55 to +75 Soldering Recommendations (Peak Temperature) c, d 26 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja 5 C/W Junction-to-Case (Drain) R thjc. Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. When mounted on " square PCB (FR4 material). c. See solder profile (/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S6-24-Rev. A, 3-Jun-6 Document Number: 76643 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SPECIFICATIONS (, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS =, I D = 25 μa - - V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 μa.5 2 2.5 Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V - - ± na Zero Gate Voltage Drain Current I DSS V GS = V V DS = V, T J = 25 C - - 5 μa V GS = V V DS = V - - V GS = V V DS = V, T J = 75 C - - 5 On-State Drain Current a I D(on) V GS = V V DS 5 V 5 - - A V GS = V I D = 2 A -.28.34 Drain-Source On-State Resistance a R DS(on) V GS = 4.5 V I D = A -.33.4 V GS = V I D = 2 A, T J = 25 C - -.58 V GS = V I D = 2 A, T J = 75 C - -.74 Forward Transconductance b g fs V DS = 5 V, I D = 5 A - 84 - S Dynamic b Input Capacitance C iss - 562 735 Output Capacitance C oss V GS = V V DS = 25 V, f = MHz - 285 375 pf Reverse Transfer Capacitance C rss - 22 29 Total Gate Charge c Q g - 97 5 Gate-Source Charge c Q gs V GS = V V DS = 5 V, I D = A - 5 - nc Gate-Drain Charge c Q gd - 2 - Gate Resistance R g f = MHz.95.92 3 Turn-On Delay Time c t d(on) - 9 3 Rise Time c t r V DD = 5 V, R L = 5-4 6 Turn-Off Delay Time c t d(off) I D A, V GEN = V, R g = - 69 ns Fall Time c t f - 87 35 Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM - - 2 A Forward Voltage V SD I F = 4 A, V GS = V -.83.2 V Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S6-24-Rev. A, 3-Jun-6 2 Document Number: 76643 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 4 2 V GS = V thru 4 V 8 84 56 28 V GS = 3 V st line 6 4 2 st line 2 4 6 8 V DS - Drain-to-Source Voltage (V) T C =-55 C 2 4 6 8 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5. g fs - Transconductance (S) 2 9 6 3 T C =-55 C st line R DS(on) - On-Resistance (Ω).8.6.4.2 V GS = V V GS = 4.5 V st line 3 6 9 2 5 Transconductance. 2 4 6 8 On-Resistance vs. Drain Current C - Capacitance (pf) 75 5 25 C rss C oss C iss st line V GS - Gate-to-Source Voltage (V) 8 6 4 2 I D = A V DS = 5 V st line 2 4 6 8 V DS - Drain-to-Source Voltage (V) 2 4 6 8 Q g - Total Gate Charge (nc) Capacitance Gate Charge S6-24-Rev. A, 3-Jun-6 3 Document Number: 76643 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) R DS(on) - On-Resistance (Normalized) 2.5 2..7.3.9 I D = A V GS = 4.5 V V GS = V.5-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) st line I S - Source Current (A)... T J = 5 C T J = 25 C.2.4.6.8..2 V SD - Source-to-Drain Voltage (V) st line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 25.2 V DS - Drain-to-Source Voltage (V) 2 7 3 9 I D = ma 5-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) st line R DS(on) - On-Resistance (Ω).6.2.8.4. T J = 5 C T J = 25 C 2 4 6 8 V GS - Gate-to-Source Voltage (V) st line Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage.5 I DM limited V GS(th) Variance (V). -.3 -.7 -. I D = 5 ma I D = 25 μa -.5-5 -25 25 5 75 25 5 75 T J - Temperature ( C) st line Limited by R DS(on) () μs ms ms ms, s, s, DC. BVDSS limited Single pulse... V DS - Drain-to-Source Voltage (V) () V GS > minimum V GS at which R DS(on) is specified st line Threshold Voltage Safe Operating Area S6-24-Rev. A, 3-Jun-6 4 Document Number: 76643 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
THERMAL RATINGS (T A = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance. Duty cycle =.5.2..5.2 Single pulse. -4-3 -2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance. Duty cycle =.5.2..5.2 Single pulse. -4-3 -2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?76643. S6-24-Rev. A, 3-Jun-6 5 Document Number: 76643 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
PowerPAK 8 x 8L Case Outline Package Information b2 W D2 E E A L L W θ b b e D D Top view (single) b2 K W Bottom view (single) D3 K D3 θ.25 gauge line E E W3 W2 E2 E3 A3 C A F W3 W2 E2 E3 D4 D4 b b D e D Top view (dual) Bottom view (dual) DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A.7.8.9.67.7.75 A..8.3..3.5 A3.55.62.7.22.24.28 b.92..8.36.39.43 b.2..8.4.43.46 b2 7.8 7.9 8..37.3.35 c.2.25.3.8..2 D 8. 8. 8.25.35.39.325 D 7.8 7.9 8..37.3.35 D2 6.7 6.8 6.9.264.268.272 D3 2.85 2.95 3.5.2.6.2 D4 6. 6.2 6.3.24.244.248 e.95 2. 2.5.77.79.8 E 7.9 8. 8..3.35.39 E 6.2 6.22 6.32.24.245.249 E2 3.94 4.4 4.4.4.59.63 E3 4.69 4.79 4.89.85.89.93 F.5..5.2.4.6 L.62.72.82.24.28.32 L.92.7.22.36.42.48 K.8.9..3.35.39 W.3.4.5.2.6.2 W.3.4.5.2.6.2 W2 4.39 4.49 4.59.73.77.8 W3 4.54 4.64 4.74.79.83.87 θ 6 4 6 4 θ 3 8 3 8 C4-89-Rev. A, 6-Oct-4 DWG: 626 Revision: 6-Oct-4 Document Number: 67734 For technical questions, contact: pmostechsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
PAD Pattern Recommended Minimum PADs for PowerPAK 8 x 8L Single 4.5 (.6) 3.55 (.4) 6.9 (.27) 8. (.3).5 (.2) Y 4.59 (.8) 3.99 (.6).44 (.2).54 (.2).29 (.5) 6. (.24) 8.25 (.32) (, ) X.85 (.3).94 (.8) 3.23 (.3) 4.5 (.6).82 (.3) 3.62 (.4) 2.47 (.) 2.3 (.8).5 (.5).88 (.3) Dimensions in millimeters (inches) Note Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 8-Apr-5 Document Number: 67477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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