/. L2U5VMA-6C GENERAL DESCRIPTION ESD PROTECTION DIODE The L2U5VMA-6C is ultra low capacitance TVS arrays designed to protect high Speed data interfaces. This Series has been specifically designed to protect Sensitive components which are connected to high-speed data and transmission lines from over voltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients) FEATURES Flow-Through design. Protects Six I/O lines and one V CC line Max. peak pulse power : P PP = 2W at T P = 8/2 us Low capacitance:.4 pf (I/O to GND) IEC 6-4-2, level 4 (ESD),>±3KV (air) ;>±4KV ( contact ) Qualified to AEC-Q Rev_C APPLICATION High Definition Multi-Media Interface (HDMI) USB 3. include the Super speed and High speed signal MECHANICAL DATA Case material: Green molding compound UL flammability classification 94V- (No Br, Sb, Cl) Halogen-free Terminals: Lead Free Plating (Matte Tin Finish) Component in accordance to RoHs 2/65/EU STAND-OFF VOLTAGE 5. Volts POWER DISSIPATION - 2 Watts SLP42P SLP42P DIM. MIN. MAX. A.45.55 A..5 A3.52 REF. D 4.24 4.76 D.3.5 E.924 2.76 E.7.9 k e.2 MIN..8 TYP. b.5.25 L.224.376 All dimension in millimeter PIN ASSIGNMENT, 4, 5, 6, 7, Input Lines 2 Vcc 9 Ground 3,8 NC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. ABSOLUTE RATINGS PARAMETER SYMBOL VALUE UNIT Peak pulse power (8/2us waveform) P PP 2 W Peak pulse current (8/2us waveform) I PP.5 A Operating junction temperature range T J -55 to +25 C Storage temperature range T STG -55 to +5 C Soldering temperature, t max = s T L 26 C ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX UNIT Reverse standoff voltage --- V DRM -- -- 5 V Breakdown voltage I t = ma V BR 6 -- 9 V Reverse leakage current V DRM = 5V I RM -- --.5 ua Junction capacitance V R = ~2.5 V, f = MHz,Between I/O pins.24.3 V R = ~2.5 V, f = MHz, Any I/O pin to ground C J --.4.5 pf Clamping voltage I PP = A (8/2 us) V C -- -- V REV., Jul. - 28, KSIR97
RATING AND CHARACTERISTIC CURVES 2 FIG.- 8/2us pulse waveform according to IEC 6-4-5 FIG.2- ESD pulse waveform according to IEC 6-4-2 % Peak Pulse Current, (%) 9 8 7 6 5 4 3 2 Percent of Peak Pulse Current % 9% % 5 5 2 25 3 35 4 tr =.7 ~ ns 3 ns Time (ns) Time,T (ms) 6 ns FIG.3- power dissipation versus pulse time FIG.4- peak pulse power versus Tj.2 TJ =25 C, tp (us) = 8/2 us exponentially decay waveform Peak Pulse Power, (W) Pulse Times (us) Ppp / Ppp, (25 C).8.6.4.2 25 5 75 25 junction temperature, ( C) FIG.5- typical junction capacitance FIG.6- reverse leakage current versus Tj 2 Junction Capacitance,Cj (pf).5.5 IR / IR (25 C). 2 3 4 5 25 5 75 25 Reverse Breakdown Voltage,VBR (V) Junction Temperature ( C)
RATING AND CHARACTERISTIC CURVES I/O +/-8KV ESD Contact discharge V (i/o) Figure 7. ESD Test Configuration Figure 8. Clamped +8 kv ESD voltage waveform Figure 9. Clamped -8 kv ESD voltage waveform
MARKING AND PACKAGING INFORMATION Marking and Orientation : Packaging Information : DEVICE Q'TY/REEL REEL DIA. (INCH) Q'TY/BOX Q'TY/CARTON L2U5VMA-6C 3K 7 3K 6K SLP42P Soldering Pad Layout :
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