V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Driving Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =4.5V) V 46A < 5.9mΩ < 9.2mΩ Applications High Frequency Switching and Synchronous Rectification DCMotor Driver % UIS Tested % Rg Tested UltraSO8 TM Top View Bottom View D D S G G S G S Orderable Part Number Package Type Form Minimum Order Quantity Ultra SO8 Tape & Reel 3 Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter DrainSource Voltage GateSource Voltage Avalanche energy T A =25 C T A =7 C L=.3mH C Symbol Continuous Drain T C =25 C 46 I D Current G T C = C 46 Pulsed Drain Current C 55 Continuous Drain Current Avalanche Current C Power Dissipation A T C =25 C Junction and Storage Temperature Range T J, T STG 55 to 5 V DS V GS I DM 25 I DSM I AS E AS T A =25 C 6.2 P DSM Maximum Power Dissipation B T C = C.5 P D ± T A =7 C 4. 52 Units V V A A A mj W W C Thermal Characteristics Parameter Symbol Typ Maximum JunctiontoAmbient A t s 5 R qja Maximum JunctiontoAmbient A D SteadyState Maximum JunctiontoCase SteadyState.9 R qjc Max 5 2.4 Units C/W C/W C/W Rev..: October 7 www.aosmd.com Page of 6
Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =25mA, V GS =V V I DSS V DS =V, V GS =V Zero Gate Voltage Drain Current μa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =25mA.5 2. 2.5 V R DS(ON) V GS =V, I D =A 4.8 5.9 mω Static DrainSource OnResistance T J =25 C 7.3 8.9 V GS =4.5V, I D =A 7.2 9.2 mω g FS Forward Transconductance V DS =5V, I D =A 7 S V SD Diode Forward Voltage I S =A, V GS =V.7 V I S Maximum BodyDiode Continuous Current G 46 A DYNAMIC PARAMETERS C iss Input Capacitance 48 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 245 pf C rss Reverse Transfer Capacitance 3 pf R g Gate resistance f=mhz.9.8 2.7 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 3 nc Q g (4.5V) Total Gate Charge 8.5 4 nc V GS =V, V DS =V, I D =A Q gs Gate Source Charge 5.5 nc Q gd Gate Drain Charge 3 nc Q oss Output Charge V GS =V, V DS =V nc t D(on) TurnOn DelayTime 7.5 ns t r TurnOn Rise Time V GS =V, V DS =V, R L =.W, 2 ns t D(off) TurnOff DelayTime R GEN =3W 23 ns t f TurnOff Fall Time 3 ns t rr Body Diode Reverse Recovery Time I F =A, di/dt=5a/ms ns Q rr Body Diode Reverse Recovery Charge I F =A, di/dt=5a/ms 2 nc A. The value of R qja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A =25 C. The Power dissipation P DSM is based on R qja t s and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =5 C. D. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A =25 C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: October 7 www.aosmd.com Page 2 of 6
R DS(ON) (mw) I S (A) R DS(ON) (mw) Normalized OnResistance I D (A) I D (A) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V 4.5V V DS =5V 8 6V 4V 8 3.5V 25 C 25 C V GS =3V 2 3 4 5 2 3 4 5 6 Figure : OnRegion Characteristics (Note E) V GS (Volts) Figure 2: Transfer Characteristics (Note E) 5.8.6 V GS =4.5V.4 V GS =V I D =A 5 V GS =V.2 V GS =4.5V I D =A 5 5 25 3.8 25 5 75 25 5 75 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) 8 5 I D =A.E.E 2.E 25 C 9 25 C.E2 6.E3 25 C 3 25 C.E4 2 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage (Note E).E5..2.4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev..: October 7 www.aosmd.com Page 3 of 6
Z qjc Normalized Transient Thermal Resistance I D (Amps) Power (W) V GS (Volts) Capacitance (pf) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =V I D =A 5 C iss 6 4 2 5 C oss C rss 5 5 25 3 Q g (nc) Figure 7: GateCharge Characteristics Figure 8: Capacitance Characteristics... R DS(ON) limited ms ms ms 5 3 T J(Max) =5 C T C =25 C. DC ms ms. T J(Max) =5 C T C =25 C... V GS > or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Figure : Single Pulse Power Rating Junctionto Case (Note F) D=T on /T T J,PK =T C P DM.Z qjc.r qjc R qjc =2.4 C/W In descending order D=.5,.3,.,.5,.2,., single pulse. Single Pulse P DM T. E5.... Figure : Normalized Maximum Transient Thermal Impedance (Note F) T on Rev..: October 7 www.aosmd.com Page 4 of 6
Z qja Normalized Transient Thermal Resistance Eoss(uJ) Power (W) Power Dissipation (W) Current rating I D (A) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 5 75 25 5 25 5 75 25 5 T CASE ( C) Figure 2: Power Derating (Note F) T CASE ( C) Figure 3: Current Derating (Note F) T A =25 C.5 3 E5.. Figure 4: Coss stored Energy Figure 5: Single Pulse Power Rating JunctiontoAmbient (Note H) D=T on /T T J,PK =T A P DM.Z qja.r qja R qja =5 C/W In descending order D=.5,.3,.,.5,.2,., single pulse.. Single Pulse P DM T..... Figure 6: Normalized Maximum Transient Thermal Impedance (Note H) T on Rev..: October 7 www.aosmd.com Page 5 of 6
Figure Gate A: Charge Gate Charge Test Circuit Test Circuit & Waveform & Waveforms Qg V Qgs Qgd Ig Figure B: Resistive Resistive Switching Switching Test Test Circuit Circuit & Waveforms Waveforms RL Charge Rg 9% % td(on) t r t d(off) t f t on t off Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = /2 LI AR 2 AR BV DSS Rg Id Id I AR Figure Diode D: Recovery Diode Recovery Test Circuit Test Circuit & Waveforms & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: October 7 www.aosmd.com Page 6 of 6