V DSS 30 V V GS max ±20 V R DS(on) max 9.0 (@ V GS = V) m (@ V GS = 4.5V) 13.5 Qg (typical) 7.1 nc I D (@T C (Bottom) = 25 C) 25 A HEXFET Power MOSFET S G S S D D D D D PQFN 3.3X3.3 mm Applications Control MOSFET for high frequency buck converter Features Benefits Low Thermal Resistance to PCB (<4.5 C/W) Enable better Thermal Dissipation Low Profile (<1.2mm) Increased Power Density Industry-Standard Pinout results in Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8334PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ± 20 V I D @ T A = 25 C Continuous Drain Current, V GS @ V 13 I D @ T C(Bottom) = 25 C Continuous Drain Current, V GS @ V 43 I D @ T C(Bottom) = C Continuous Drain Current, V GS @ V 27 I D @ T C = 25 C Continuous Drain Current, V GS @ V 25 (Source Bonding Technology Limited) I DM Pulsed Drain Current 176 P D @T A = 25 C Power Dissipation 2.7 P D @T C(Bottom) = 25 C Power Dissipation 28 Linear Derating Factor 0.021 W/ C T J Operating Junction and -55 to + 150 T STG Storage Temperature Range A W C Notes through are on page 1 2016-2-23
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA BV DSS / T J Breakdown Voltage Temp. Coefficient 21 mv/ C Reference to 25 C, I D = 1.0mA R DS(on) Static Drain-to-Source On-Resistance 7.2 9.0 V GS = V, I D = 20A m 11.2 13.5 V GS = 4.5V, I D = 16A V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V V DS = V GS, I D = 25µA V GS(th) Gate Threshold Voltage Coefficient -6.6 mv/ C I DSS Drain-to-Source Leakage Current 1.0 V DS = 24V, V GS = 0V µa 150 V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage V GS = 20V na Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 44 S V DS = V, I D = 20A Q g Total Gate Charge 15 nc V GS = V, V DS = 15V, I D = 20A Q g Total Gate Charge 7.1 11 Q gs1 Pre-Vth Gate-to-Source Charge 2.5 V DS = 15V Q gs2 Post-Vth Gate-to-Source Charge 1.0 nc V GS = 4.5V Q gd Gate-to-Drain Charge 2.3 I D = 20A Q godr Gate Charge Overdrive 1.3 Q sw Switch Charge (Q gs2 + Q gd ) 3.3 Q oss Output Charge 5.7 nc V DS = 16V, V GS = 0V R G Gate Resistance 1.2 t d(on) Turn-On Delay Time 8.3 V DD = 15V, V GS = 4.5V t r Rise Time 14 ns I D = 20A t d(off) Turn-Off Delay Time 7.0 R G =1.8 t f Fall Time 4.6 C iss Input Capacitance 1180 V GS = 0V C oss Output Capacitance 260 pf V DS = V C rss Reverse Transfer Capacitance 1 ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 35 mj Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 25 (Body Diode) showing the A I SM Pulsed Source Current integral reverse 176 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T J = 25 C, I S = 20A, V GS = 0V t rr Reverse Recovery Time 13 20 ns T J = 25 C, I F = 20A, V DD = 15V Q rr Reverse Recovery Charge 19 29 nc di/dt = 380A/µs G D S Thermal Resistance Parameter Typ. Max. Units R JC (Bottom) Junction-to-Case 4.5 R JC (Top) Junction-to-Case 44 C/W R JA Junction-to-Ambient 47 R JA (<s) Junction-to-Ambient 30 2 2016-2-23
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V BOTTOM 2.5V VGS TOP V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V BOTTOM 2.5V 1 0.1 2.5V 60µs PULSE WIDTH Tj = 25 C 0.01 0.1 1 V DS, Drain-to-Source Voltage (V) 1 2.5V 60µs PULSE WIDTH Tj = 150 C 0.1 0.1 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 1.6 I D = 20A V GS = V 1.4 T J = 150 C 1.2 T J = 25 C 1.0 1.0 V DS = 15V 60µs PULSE WIDTH 1 2 3 4 5 6 7 8 V GS, Gate-to-Source Voltage (V) 0.8 0.6-60 -40-20 0 20 40 60 80 120 140 160 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 0 V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss 14.0 12.0.0 I D = 20A V DS = 24V V DS = 15V V DS = 6.0V C oss 8.0 6.0 C rss 4.0 2.0 1 V DS, Drain-to-Source Voltage (V) 0.0 0 2 4 6 8 12 14 16 18 20 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 2016-2-23
V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) µsec T J = 150 C Limited by package 1msec T J = 25 C 1 msec V GS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V SD, Source-to-Drain Voltage (V) 0.1 Tc = 25 C DC Tj = 150 C Single Pulse 0.01 0.1 1 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 50 2.8 Limited By Source Bonding Technology 2.6 40 2.4 2.2 30 2.0 1.8 I D = 25µA 20 1.6 I D = 250µA 1.4 1.2 I D = 1.0mA I D = 1.0A 1.0 0 25 50 75 125 150 T C, Case Temperature ( C) 0.8-75 -50-25 0 25 50 75 125 150 T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Drain-to Source Breakdown Voltage D = 0.50 1 0.1 0.20 0. 0.05 0.02 0.01 Thermal Response ( Z thjc ) C/W 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-23
R DS(on), Drain-to -Source On Resistance (m ) 30 25 I D = 20A 20 15 T J = 125 C T J = 25 C E AS, Single Pulse Avalanche Energy (mj) 160 140 120 I D TOP 4.3A 9.0A BOTTOM 20A 80 60 40 20 5 0 5 15 20 V GS, Gate -to -Source Voltage (V) 0 25 50 75 125 150 Starting T J, Junction Temperature ( C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V (BR)DSS 15V tp V DS L DRIVER R G 20V tp D.U.T I AS 0.01 + - V DD A I AS Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms 5 2016-2-23
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs VDD Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform 6 2016-2-23
PQFN 3.3 x 3.3 Outline C Package Details 8 7 6 5 1 2 3 4 1 2 3 4 8 7 6 5 PQFN 3.3 x 3.3 Outline G Package Details 8 7 6 5 #1 2 3 4 #1 2 3 4 8 7 6 5 For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf 7 2016-2-23
PQFN 3.3mm x 3.3mm Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX?YWW? XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ PQFN 3.3mm x 3.3mm Outline Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE DIMENSION (MM) DIMENSION (INCH) CODE MIN MAX MIN MAX Ao 3.50 3.70.138.146 Bo 3.50 3.70.138.146 Ko 1. 1.30.043.051 P1 7.90 8..311.319 W 11.80 12.20.465.480 W1 12.30 12.50.484.492 Qty 4000 Reel Diameter 13 Inches CODE Ao Bo Ko W P1 DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-23
Qualification Information Qualification Level Consumer (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS Compliant PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Notes: Starting T J = 25 C, L = 0.18mH, R G = 50, I AS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at T J of approximately 90 C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology. Pulse drain current is limited by source bonding technology. 9 2016-2-23
Revision History Date 6/5/2014 Updated schematic on page 1. Updated tape and reel on page 8. 7/1/2014 Remove SAWN package outline on page 7. 2/23/2016 Comments Updated datasheet with corporate template Corrected typo switch time test condition from V DD = 30V to V DD = 15V on page2 Updated package outline to reflect the PCN # (241-PCN30-Public) for Option C and Option G on page 7. Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 2016-2-23