Design Assistance Assembly Assistance Die handling cnsultancy Hi-Rel die qualificatin Ht & Cld die prbing Electrical test & trimming Custmised Pack Sizes / Qtys Supprt fr all industry recgnised supply frmats: Waffle Pack Gel Pak Tape & Reel Onsite strage, stckhlding & scheduling 00% Visual Inspectin MIL-STD 883 Cnditin A MIL-STD 883 Cnditin A On-site failure analysis Bespke 24 Hur mnitred strage systems fr secure lng term prduct supprt On-site failure analysis Cntact baredie@micrss.cm Fr price, delivery and t place rders www.analg.cm www.micrss.cm
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Typical Applicatins This is ideal fr: Features Nise Figure: 2.5 db Wideband Cmmunicatins Receivers Surveillance Systems Pint-t-Pint Radis Pint-t-Multi-Pint Radis Military & Space Test Instrumentatin Functinal Diagram Gain:.6 db @ 0 GHz PdB Output Pwer: +0 dbm Supply Vltage: +2V @ 55 ma Die Size: 3.0 x.435 x 0. mm General Descriptin The is a GaAs MMIC HEMT Lw Nise Distributed Amplifi er die which perates between 2 and 20 GHz. The amplifi er prvides.6 db f gain at 0 GHz, 2.5 db nise fi gure and +0 dbm f utput pwer at db gain cmpressin while requiring nly 55 ma frm a +2V supply vltage. The HMC- ALH02 amplifi er is ideal fr integratin int Multi- Chip-Mdules (MCMs) due t its small size. Electrical Specificatins, T A = +25 C, Vdd= 2V [], Idd = 55mA [2] Parameter Min. Typ. Max. Units Frequency Range 2-20 GHz Gain 8 0 db Input Return Lss 5 db Output Return Lss 2 db Output Pwer fr db Cmpressin 8 0 dbm Nise Figure 2.5 db Supply Current (Idd) 55 ma [] Unless therwise indicated, all measurements are frm prbed die [2] Adjust Vgg between -V t +0.3V (Typ. -0.5V) t achieve Idd= 55 ma - 4 Fr price, delivery, and t place rders, please cntact Hittite Micrwave Crpratin: 20 Alpha Rad, Chelmsfrd, MA 0824 Phne: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.cm
Linear Gain vs. Frequency 6 Nise Figure vs. Frequency 5 GAIN (db) 2 8 4 0 2 6 0 4 8 22 FREQUENCY (GHz) Input Return Lss vs. Frequency RETURN LOSS (db) 0-5 -0-5 NOISE FIGURE (db) Output Return Lss vs. Frequency RETURN LOSS (db) 4 3 2 0 2 6 0 4 8 22 FREQUENCY (GHz) 0-5 -0-5 -20-20 -25 2 6 0 4 8 22 FREQUENCY (GHz) -25 2 6 0 4 8 22 FREQUENCY (GHz) Nte: Measured Perfrmance Characteristics (Typical Perfrmance at 25 C) Vd= 2.0 V, Id = 55 ma Fr price, delivery, and t place rders, please cntact Hittite Micrwave Crpratin: 20 Alpha Rad, Chelmsfrd, MA 0824 Phne: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.cm - 5
Abslute Maximum Ratings Drain Bias Vltage +3.7 Vdc Gate Bias Vltage - t +0.3 Vdc RF Input Pwer 5 dbm Channel Temperature 80 C Outline Drawing ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Infrmatin [] Standard Alternate GP-2 (Gel Pack) [2] [] Refer t the Packaging Infrmatin sectin fr die packaging dimensins. [2] Fr alternate packaging infrmatin cntact Hittite Micrwave Crpratin. NOTES:. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS.004 SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002-6 Fr price, delivery, and t place rders, please cntact Hittite Micrwave Crpratin: 20 Alpha Rad, Chelmsfrd, MA 0824 Phne: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.cm
Pad Descriptins Pad Number Functin Pad Descriptin Interface Schematic RFIN This pas is AC cupled and matched t 50 Ohms. 2 Vdd 3, 5 Vgg Pwer Supply Vltage fr the amplifi er. See Assembly Diagram fr required external cmpnents. Gate cntrl fr amplifi er. Please fllw MMIC Amplifi er Biasing Prcedure applicatin nte. See assembly fr required external cmpnents. 4 RFOUT This pad is AC cupled and matched t 50 Ohms. Die Bttm GND Die Bttm must be cnnected t RF/DC grund. Fr price, delivery, and t place rders, please cntact Hittite Micrwave Crpratin: 20 Alpha Rad, Chelmsfrd, MA 0824 Phne: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.cm - 7
Assembly Diagram Nte : Bypass caps shuld be 00 pf (apprximately) ceramic (single-layer) placed n farther than 30 mils frm the amplifi er Nte 2: Best perfrmance btained frm use f <0 mil (lng) by 3 by 0.5 mil ribbns n input and utput.0 Ohms Nte 3: Gate bnd pads (VG) exist n the upper & lwer sides f the MMIC fr assembly cnvenience. Fr best perfrmance the unused pad shuld be attached t a 00pF cap t grund, but is nt required. - 8 Fr price, delivery, and t place rders, please cntact Hittite Micrwave Crpratin: 20 Alpha Rad, Chelmsfrd, MA 0824 Phne: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.cm
Munting & Bnding Techniques fr Millimeterwave GaAs MMICs The die shuld be attached directly t the grund plane eutectically r with cnductive epxy (see HMC general Handling, Munting, Bnding Nte). 50 Ohm Micrstrip transmissin lines n 0.27mm (5 mil) thick alumina thin fi lm substrates are recmmended fr bringing RF t and frm the chip (Figure ). If 0.254mm (0 mil) thick alumina thin fi lm substrates must be used, the die shuld be raised 0.50mm (6 mils) s that the surface f the die is cplanar with the surface f the substrate. One way t accmplish this is t attach the 0.02mm (4 mil) thick die t a 0.50mm (6 mil) thick mlybdenum heat spreader (mly-tab) which is then attached t the grund plane (Figure 2). Micrstrip substrates shuld be brught as clse t the die as pssible in rder t minimize bnd wire length. Typical die-t-substrate spacing is 0.076mm (3 mils). Handling Precautins Fllw these precautins t avid permanent damage. Strage: All bare die are placed in either Waffle r Gel based ESD prtective cntainers, and then sealed in an ESD prtective bag fr shipment. Once the sealed ESD prtective bag has been pened, all die shuld be stred in a dry nitrgen envirnment. Cleanliness: Handle the chips in a clean envirnment. DO NOT attempt t clean the chip using liquid cleaning systems. Static Sensitivity: Fllw ESD precautins t prtect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables t minimize inductive pick-up. General Handling: Handle the chip alng the edges with a vacuum cllet r with a sharp pair f bent tweezers. The surface f the chip has fragile air bridges and shuld nt be tuched with vacuum cllet, tweezers, r fi ngers. Munting The chip is back-metallized and can be die munted with AuSn eutectic prefrms r with electrically cnductive epxy. The munting surface shuld be clean and fl at. Eutectic Die Attach: A 80/20 gld tin prefrm is recmmended with a wrk surface temperature f 255 C and a tl temperature f 265 C. When ht 90/0 nitrgen/hydrgen gas is applied, tl tip temperature shuld be 290 C. DO NOT expse the chip t a temperature greater than 320 C fr mre than 20 secnds. N mre than 3 secnds f scrubbing shuld be required fr attachment. Epxy Die Attach: Apply a minimum amunt f epxy t the munting surface s that a thin epxy fi llet is bserved arund the perimeter f the chip nce it is placed int psitin. Cure epxy per the manufacturer s schedule. Wire Bnding 0.02mm (0.004 ) Thick GaAs MMIC 0.076mm (0.003 ) RF Grund Plane Wire Bnd 0.27mm (0.005 ) Thick Alumina Thin Film Substrate Figure. 0.02mm (0.004 ) Thick GaAs MMIC 0.076mm (0.003 ) 0.50mm (0.005 ) Thick Mly Tab RF Grund Plane Wire Bnd 0.254mm (0.00 ) Thick Alumina Thin Film Substrate Figure 2. Ball r wedge bnd with 0.025 mm ( mil) diameter pure gld wire is recmmended. Thermsnic wirebnding with a nminal stage temperature f 50 C and a ball bnding frce f 40 t 50 grams r wedge bnding frce f 8 t 22 grams is recmmended. Use the minimum level f ultrasnic energy t achieve reliable wirebnds. Wirebnds shuld be started n the chip and terminated n the package r substrate. All bnds shuld be as shrt as pssible <0.3 mm (2 mils). Fr price, delivery, and t place rders, please cntact Hittite Micrwave Crpratin: 20 Alpha Rad, Chelmsfrd, MA 0824 Phne: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.cm - 9