AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies Low turn-off switching loss and softness Very good EMI behavior High short-circuit ruggedness Product Summary V CE I C (T C = C) 65V 5A V CE(sat) (T J =).7V Applications Motor Drives Sewing Machines Home Appliances Fan, Pumps, Vacuum Cleaner Other hard switching applications TO-F C G C E G E Orderable Part Number Package Type Form AOTF5B65M TOF Tube Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol AOTF5B65M Collector-Emitter Voltage 65 Gate-Emitter Voltage Continuous Collector Current T C = T C = C Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE 65V, Limited by T Jmax Continuous Diode T C = Forward Current T C = C Diode Pulsed Current, Limited by T Jmax Short circuit withstanding time ) V GE = 5V, V CC 4V, T J 5 C Power Dissipation AOTF5B65M T C = T C = C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, /8" from case for 5 seconds Thermal Characteristics T J, T STG T L -55 to 5 3 Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Symbol R θ JA R θ JC R θ JC AOTF5B65M 65 3.5 3.7 ) Allowed number of short circuits: <; time between short circuits: >s. ) TOF I C Follow TO/TO63. V CE V GE I C I CM I LM I FM t SC 3 ) 5 ) Minimum Order Quantity ±3 V A I F 3 ) A P D 5 ) Units V 5 µs 36 4 A A A W C C Units C/W C/W Rev..: April 5 www.aosmd.com Page of 9 C/W
Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J = 65 - - V V CE(sat) V F T J = -.7.5 T J =5 C -.3 - T J =5 C -. - T J = -.5.9 T J =5 C -.55 - T J =5 C -.5 - V GE(th) Gate-Emitter Threshold Voltage V CE =5V, I C =ma - 5. - V I CES T J = - - T J =5 C - - 5 T J =5 C - - I GES Gate-Emitter leakage current V CE =V, V GE =±3V - - ± na g FS C ies C oes C res Q g Q ge Q gc I C(SC) R g t D(on) t r t D(off) t f E on E off E total t rr t D(on) t r t D(off) t f E on E off E total t rr Q rr I rm Collector-Emitter Saturation Voltage Diode Forward Voltage Zero Gate Voltage Collector Current Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Emitter Charge V GE =5V, V CC =5V, I C =5A Gate to Collector Charge Short circuit collector current Gate resistance SWITCHING PARAMETERS, (Load Inductive, T J =) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time T J = Q rr Diode Reverse Recovery Charge I F =5A, di/dt=a/µs, V CC =4V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, T J =5 C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current V GE =5V, I C =5A V GE =V, I C =5A V CE =65V, V GE =V V CE =V, I C =5A V GE =V, V CC =5V, f=mhz V GE =5V, V CC =4V, t sc 5us, T J 5 C V GE =V, V CC =V, f=mhz T J = V GE =5V, V CC =4V, I C =5A, R G =Ω T J =5 C V GE =5V, V CC =4V, I C =5A, R G =Ω T J =5 C I F =5A, di/dt=a/µs, V CC =4V V V µa - - S - 95 - pf - - pf - 33 - pf - 3 - nc - 7.8 - nc - 5 - nc - 9 - A - 6.7 - Ω - 5 - ns - 8 - ns - 94 - ns - 4 - ns -.9 - mj -. - mj -.49 - mj - 98 - ns -.7 - µc - 5.4 - A - 4 - ns - - ns - - ns - 4 - ns -.3 - mj -.34 - mj -.66 - mj - 4 - ns -.3 - µc - 6.8 - A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: April 5 www.aosmd.com Page of 9
75 6 V 7V 5V 3V V 6 48 36 3V 5V 7V V 3 5 3 4 5 6 7 V CE (V) Figure : Output Characteristic (T j = ) 9V V GE = 7V 4 3 4 5 6 7 V CE (V) Figure : Output Characteristic (T j =5 C ) V 9V V GE =7V V CE =V 36 36 7 8 5 C I F (A) 7 8-4 C 5 C 9-4 C 9 3 6 9 5 V GE (V) Figure 3: Transfer Characteristic.5.5.5 3 V F (V) Figure 4: Diode Characteristic 5.5 4 3A V CE(sat) (V) 3 I C =3A I C =5A V SD (V).5 5A 5A I C =7.5A.5 IF=A 5 5 75 5 5 Temperature ( C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature 5 5 75 5 5 Temperature ( C ) Figure 6: Diode Forward voltage vs. Junction Temperature Rev..: April 5 www.aosmd.com Page 3 of 9
5 V CE =5V I C =5A C ies V GE (V) 9 6 3 Capacitance (pf) C oes C res 8 6 4 3 4 Q g (nc) Figure 7: Gate-Charge Characteristics 8 6 4 3 4 V CE (V) Figure 8: Capacitance Characteristic 5 4 Power Disspation(W) 3 5 5 75 5 5 T CASE ( C) Figure : Power Disspation as a Function of Case E- 6 E-3 Current rating 8 4 I CE(S) (A) E-4 E-5 E-6 E-7 V CE =65V V CE =5V 5 5 75 5 5 T CASE ( C) Figure : Current De-rating E-8 5 5 75 5 5 Temperature ( C ) Figure : Diode Reverse Leakage Current vs. Junction Temperature Rev..: April 5 www.aosmd.com Page 4 of 9
Td(off) Tf Td(on) Tr Td(off) Tf Td(on) Tr Switching Time (ns) Switching Time (ns) 5 5 5 3 Figure 3: Switching Time vs. I C (T j =5 C,V GE =5V,V CE =4V,R g =Ω) 4 8 6 R g (Ω) Figure 4: Switching Time vs. R g (T j =5 C,V GE =5V,V CE =4V,I C =5A) Switching Time (ns) Td(off) Tf Td(on) Tr V GE(TH) (V) 7 6 5 4 3 5 5 75 5 5 T J ( C) Figure 5: Switching Time vs.t j (V GE =5V,V CE =4V,I C =5A,R g =Ω) 5 5 75 5 5 T J ( C) Figure 6: V GE(TH) vs. T j Rev..: April 5 www.aosmd.com Page 5 of 9
SwitchIng Energy (mj).5.5.5 Eoff Eon Etotal Switching Energy (mj).5.5.5 Eoff Eon Etotal 5 5 5 3 Figure 7: Switching Loss vs. I C (T j =5 C,V GE =5V,V CE =4V,R g =Ω) 4 8 6 R g (Ω) Figure 8: Switching Loss vs. R g (T j =5 C,V GE =5V,V CE =4V,I C =5A) Eoff Eoff Switching Energy (mj).8.6.4. Eon Etotal Switching Energ y (mj).8.6.4. Eon Etotal 5 5 75 5 5 T J ( C) Figure 9: Switching Loss vs. T j (V GE =5V,V CE =4V,I C =5A,R g =Ω) 5 3 35 4 5 V CE (V) Figure : Switching Loss vs. V CE (T j =5 C,V GE =5V,I C =5A,R g =Ω) Rev..: April 5 www.aosmd.com Page 6 of 9
4 5 5 5 C 6 5 C 3 4 Q rr (nc) 8 4 Q rr 5 C I rm 4 6 8 I rm (A) T rr (ns) 3 T rr 5 C S 9 6 3 S 5 5 5 3 I F (A) Figure : Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (V GE =5V,V CE =4V,di/dt=A/µs) 5 5 5 3 I F (A) Figure : Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (V GE =5V,V CE =4V,di/dt=A/µs) 5 5 5 3 5 C 4 4 4 Q rr (nc) 9 6 3 Q rr 5 C 3 4 5 6 7 8 di/dt (A/µS) Figure 3: Diode Reverse Recovery Charge and Peak Current vs. di/dt (V GE =5V,V CE =4V,I F =5A) I rm 3 I rm (A) T rr (ns) 3 T rr 5 C 5 C S 3 4 5 6 7 8 di/dt (A/µS) Figure 4: Diode Reverse Recovery Time and Softness Factor vs. di/dt (V GE =5V,V CE =4V,I F =5A) 8 6 S Rev..: April 5 www.aosmd.com Page 7 of 9
Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =3.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P DM T on T. E-6 E-5.... Pulse Width (s) Figure 5: Normalized Maximum Transient Thermal Impedance for IGBT Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =3.7 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P DM T on T. E-6 E-5.... Pulse Width (s) Figure 6: Normalized Maximum Transient Thermal Impedance for Diode Rev..: April 5 www.aosmd.com Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev..: April 5 www.aosmd.com Page 9 of 9