SPDT RF Switch RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V

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High Power RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V The Big Deal High power handling, 32W @ 850 MHz - Pulsed High IIP3, +81 m Immune to latch-up CASE STYLE: JY2179 Product Overview Mini-Circuits is a MMIC SPDT reflective switch with an internal driver designed for wideband operation from 30 to 2700 MHz with high RF input power handling. This model provides high linearity, low insertion loss, fast switching speed and low current consumption in a tiny 5x5mm 32-lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. provides a high level of ESD protection and excellent repeatability. The switch operates on a single positive supply voltage with very low current consumption of 120µA (typical). Key Features Feature Wideband, 30 to 2700 MHz High power: 32W @ 850 MHz Pulsed 20W @ 850 MHz CW Low insertion loss: 0.25 @ 850 MHz 0.4 @ 2000 MHz High isolation: 34 at 1000 MHz 27 at 2700 MHz High linearity, +85 m IIP3 Small size, 5 x 5mm QFN package Advantages One model can be used in many applications, saving component count. Also ideal for wideband applications such as military and instrumentation. Suitable for signal routing applications with high power requirement such as antenna feeds in transmit systems and more. Provides excellent transmission of signal power from input to output and minimizes overall system loss. High isolation significantly reduces leakage of power into OFF ports. High linearity minimizes unwanted inter-modulation products which are difficult or impossible to filter in multi-carrier environments, or in the presence of strong interfering signal from adjacent circuitry or received by antenna. Small footprint for a high power switch saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. Page 1 of 5

High Power RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V 50Ω 30-2700 MHz Product Features High Power 45 m (32W) at 850 MHz, 44 m (25W) at 2 GHz - Pulsed High IIP3 85 m at 850 MHz, 81 m at 2.7 GHz Low Insertion Loss 0.25 at 850 MHz, 0.4 at 2 GHz Low current consumption, 120 µa typ. Immune to latch up Typical Applications Defense Communication Infrastructure Test and Measurements CASE STYLE: JY2179 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications General Description is a high power reflective SPDT switch with integral CMOS driver, operates with single positive supply voltage while consuming, 120 µa typical. It has been designed for wideband operation. It is packaged in a tiny 5mm x 5mm, 32-lead package and is rated MSL3 and passes 1.5KV for ESD (HBM). Simplified Schematic and Pad Description Function Pad Number RF COM 28 RF common/ SUM port* RF1 2 RF out #1/In port #1* RF2 23 RF out #1/In port #2* Control 13 CMOS Control IN VDD 12 Supply voltage GND 1,3-11,14-22, 24-27, 29-32, paddle RF ground *Must be held at 0V DC. If required add DC blocking capacitors on these ports. Description REV. OR M160359 RS/CP 170301 Page 2 of 5

RF Electrical Specifications 1, T AMB =25 C, 50Ω, V DD = +3.3V Parameter Condition (MHz) Min. Typ. Max. Units Frequency range 30 2700 MHz Insertion loss 2,4 1000-2000 0.4 0.60 30-1000 0.3 0.45 Isolation between Common port and RF1/RF2 Ports Isolation between RF1 and RF2 ports Return loss (ON STATE) Harmonics Input IP3 2000-2700 0.7 0.95 30-1000 34 35 1000-2000 27 28 2000-2700 23 24 30-1000 34 37 1000-2000 27 30 2000-2700 23 26 30-1000 30 1000-2000 20 2000-2700 20 2f=+45 m pulsed at 1 GHz -94-90 3f=+45 m pulsed at 1 GHz -84-80 c 850 85 m 2700 81 Input 0.1 Compression 3 30-2000 35.5 W 2000-2700 28.2 RF Input Power Operating CW 6 (Cold Switching) 30-2000 20.0 2000-2700 15.8 Hot Switching 30-2700 1.0 30-2000 31.6 RF Input Power Operating pulsed 5,7 2000-2700 25.1 Thermal Resistance Junction to case 35.6 C/W Operating Juction Temperature 140 C Notes: 1. Tested on Mini-Circuits test board TB-923+, using Agilent s N5230A network analyzer (see Characterization test circuit, Fig.1). 2. Insertion loss values are de-embedded from test board loss. 3. 0.1 Compression is a measure of linearity. For continuous operation do not exceed RF input power operating specs. 4. Insertion loss and return loss are improved by external matching, see Test board drawing. 5. 10% duty cycle, 4620 µ period. 6. Derate linearly to 10W (over 30-2000 MHz) and 8W (over 2000-2700 MHz) at 85 C 7. Derate linearly to 15.8W (over 30-2000 MHz) and 12.5W (over 2000-2700 MHz) at 85 C 8. Maximum control voltage high also cannot exceed VDD DC Electrical Specifications Parameter Min. Typ. Max. Units Supply voltage, V DD 2.3 5.5 V Supply current 130 200 µa Control voltage Low -0.3 0.6 V Control voltage High 8 1.17 3.6 V Control current 2.0 µa W W Switching Specifications Parameter Condition Min. Typ. Max. Units Switching time 50% Control to 90%/10% RF 15 25 µsec Switching time 50% Control to 0.01 Video feed-through Rise/Fall Time 10 to 90% or 90 to 10% V CTRL=100Hz, 0 to 3V V DD=3.3V 41 µsec 27 mv P-P 14 µsec Page 3 of 5

Absolute Maximum Ratings 9 Parameter Ratings Operating temperature -40 C to +85 C Storage temperature -65 C to 150 C V DD, Supply voltage -0.3 to 5.5V Voltage control -0.3V Min. 3.6 Max. RF Input power, CW 0.03-2 GHz 35.5W 2-2.7 GHz 28.2W Junction Temperature 200 C (10s max) 9. Operation of this device above any of these conditions may cause permanent damage. Truth Table (State of control voltage selects the desired switch state) State of Control voltage RF common to RF1 RF2 High ON OFF Low OFF ON ON- low insertion loss state OFF- Isolation State Characterization Test Circuit Component Value Size Manufacturer Remarks C1 0.2 pf 0402 Various C2 0.01µF 0603 Various C3 100 pf 0603 Various R1 0Ω 0603 Various L 0.195 See PL drawing W 0.012 See PL drawing Figure 1. Block Diagram of test Circuit used for characterization (DUT soldered on Mini-Circuit s TB-923+) Page 4 of 5

Product Marking 32 1 MCL HSW2 Marking may contain other features or characters for internal lot control Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Performance Data Case Style Tape & Reel Standard quantities available on reel Suggested Layout for PCB Design Evaluation Board Environmental Ratings Data Table Swept Graphs JY2179 Plastic package, exposed paddle F68 7 reels with 20, 50, 100, 200, 500, 1000 devices 13 reels with 3K devices PL-494 TB-923+ ENV83 ESD Rating Human Body Model (HBM): Class 1C (pass 1000V) in accordance with MIL-STD-883, Method 3015 MSL Rating Moisture Sensitivity: MSL3 in accordance with IPC/JEDEC J-STD-020D Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms ); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/mclstore/terms.jsp Page 5 of 5