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Transcription:

LITE-ON SEMICONDUCTOR BIDIRECTIONAL ESD PROTECTION DIODES STAND-OFF VOLTAGE - 12. Volts POWER DISSIPATION - 35 WATTS GENERAL DESCRIPTION Electro Static Discharge ( ESD ) protection diodes in ultra small SMD Plastic packages designed to protect one signal line from the damage caused by ESD and other transients. SOD323 SOD323 FEATURES Bidirectional ESD protection of one line. Max. peak pulse power : Ppp = 35W at tp = 8/2 us ESD protection>25kvper MIL-STD-883C, Method 315-6:Class3 IEC 61-4-2, level 4 ( ESD ), >15KV ( air ) ; >8KV ( contact ). Qualified to AEC-Q11 Rev_C F Detail X DIM. MIN. MAX. A.8 1.1 B.25.4 C.1.25 D 1.6 1.8 E 1.15 1.35 F 2.3 2.7 APPLICATION Computers and peripherals Communication system Notebooks. Desktops & Servers. B H G I C G.15.45 H ----.5 I.15.25 All Dimensions in millimeter Portable electronics Cellular handsets and accessories. PIN A SSIGNMENT 1 Cathode MECHANICAL DATA 2 Cathode Case Material: "Green" molding compound UL flammability classification 94V- (No Br.Sb, Cl) Terminals: Lead Free Plating (Matte Tin Finish) Component in accordance to RoHs 211/65/EU MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit Peak pulse Power ( 8/2us Waveform) PPPM 35 W Peak Pulse Current ( 8/2us Waveform) IPP 15 A Operating Junction Temperature Range TJ -55 to + 15 Storage Temperature Range Tstg -55 to + 15 Soldering Temperature, t max = 1s TL 26 ELECTRICAL CHARACTERISTICS (Tj= 25 unless otherwise noticed) Parameter Symbol Conditions MIn Max Unit Reverse standoff voltage VDRM --- --- 12. V Reverse leakage current IRM VDRM = 12 V --- 1 ua Breakdown voltage VBR IR = 1 ma 13.3 15.5 V Diode capacitance CJ VR = V, f = 1MHz ------ 1 pf Clamping voltage VCL IPP = 15A ( 8/2us ) --- 24 V REV. 4, FEB-216, KSIR23

12 1% Ipp: 8us 1% 9% Percent of Peak Pulse Current (%) 4 e -1 5% Ipp: 2us 1 2 3 4 Time (us) Percent of Peak Pulse Current % 1% tr =.7 ~1 ns 3 ns 6 ns Time (ns) Figure 1. 8/2 us pulse waveform according to IEC 61-4-5 Figure 2. ESD pulse waveform according to IEC 61-4-2 1 T J =25, tp (us) = 8/2 us exponentially decay waveform 1.2 1.8 Ppp Ppp (25 ) Peak pulse Power (W) Capacitance (pf) 1 1 1 1 1 1 1 Pulse Time (us) Figure 3. Power Dissipation versus Pulse Time 6 1. 5 4 3 1. 2 1 T J =25, f=1mhz, Vosc=1V 2 4 6 8 1 12 Reverse Voltage (V) Figure 5. Typical Junction Capactiance ) ) Ppp / Ppp (25 IR / IR (25.4 1. 1..1 e -1 5 1 15 2 Junction Temperature ( ) Figure 4. Peak pulse power versus TJ 25 5 75 1 125 15 Junction Temperature ( ) Figure 6. Reverse Leakage Current versus TJ

I/O1 +/-8KV ESD Contact discharge Figure 7. ESD Test Configuration Figure 8. Clamped +8 kv ESD voltage waveform Figure 9. Clamped -8 kv ESD voltage waveform

Marking & Orientation WBC WBC Note: Marking is none direction Packaging Information DEVICE Q'TY/REEL REEL DIA. (INCH) Q'TY/BOX Q'TY/CARTON 3 7 45 9K/18K SOD-323 Soldering Pad Layout

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