MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDDN5 is suitable device for SMPS, HID and general purpose applications. Features V DS = 5V = 3.A R DS(ON).75Ω Applications Power Supply PFC LED TV @V GS = V Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 5 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C=5 o C 3. A T C= o C.9 A Pulsed Drain Current () M A Power Dissipation T C=5 o C P D 37 W Derivate above 5 o C.9 W/ o C Peak Diode Recovery dv/dt (3) dv/dt 5.5 V/ns Repetitive Pulse Avalanche Energy () E AR 3.7 mj Avalanche current () I AR 3. A Single Pulse Avalanche Energy () E AS 5 mj Junction and Storage Range T J, T stg -55~5 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja Thermal Resistance, Junction-to-Case () R θjc 3. o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDDN5RH -55~5 o C D-PAK Reel and Tape Halogen Free Electrical Characteristics (Ta =5 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 5μA, V GS = V 5 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 5μA 3. - 5. Drain Cut-Off Current SS V DS = 5V, V GS = V - - μa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, =.5A.38.75 Ω Forward Transconductance g fs V DS = 3V, =.5A -.7 - S Dynamic Characteristics Total Gate Charge Q g -. - Gate-Source Charge Q gs V DS = V, = 3.6A, V GS = V -.35 - Gate-Drain Charge Q gd -.95 - Input Capacitance C iss - 6 - Reverse Transfer Capacitance C rss V DS = 5V, V GS = V, f =.MHz - 3 - Output Capacitance C oss - 3 - Turn-On Delay Time t d(on) - 8 - Rise Time t r V GS = 5V, V DS = 5V, = 3.6A, - - Turn-Off Delay Time t d(off) R G = 5Ω - 5 - Fall Time t f - 6 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - - 3. A Source-Drain Diode Forward Voltage V SD I S = 3.A, V GS = V - -.5 V Body Diode Reverse Recovery Time t rr - - ns I F = 3.6A, di/dt = A/μs (3) Body Diode Reverse Recovery Charge Q rr -.3 - μc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX)=5 C. 3. I SD 3.6A, di/dt 3A/us, V DD BVdss, R g =5Ω, Starting T J=5 C. L=9.3mH, I AS=3.A, V DD=5V, R g =5Ω, Starting T J=5 C
(A) BV DSS, (Normalized) Drain-Source Breakdown Voltage,Drain Current [A] R DS(ON) [Ω ] Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance 6 5 V gs =5.5V =6.V =6.5V =7.V =8.V =V =5V Notes. 5 μs Pulse Test. T C =5 3 3 VGS=V V GS =V 3 5 6 7 8 9 3 5 6 7 8 9 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics 3 5 6 7 8,Drain Current [A] Fig. On-Resistance Variation with Drain Current and Gate Voltage 3...5. V GS = V. =3.A. V GS = V. = 5 μa...5...9.5. -5 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 5 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. * Notes ;. Vds=3V R 5. V GS = V.5 s Pulse test 5 5 5-55. 3 5 6 7 8 9 V GS [V] Fig.5 Transfer Characteristics....6.8.. V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
Power (W), Drain Current [A], Drain Current [A] Z θ JC (t), Thermal Response V GS, Gate-Source Voltage [V] Capacitance [pf] Note : = 3.6A 5V 5V C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 8 V C iss 6 C rss Notes ;. V GS = V. f = MHz 3 5 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics V DS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) - - Single Pulse T J =Max rated T C =5 ms DC ms ms - V DS, Drain-Source Voltage [V] s - - D=.5...5.. single pulse Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3. /W -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig.9 Maximum Safe Operating Area Fig. Transient Thermal Response Curve 5 single Pulse R thjc = 3. /W T C = 5. 3.5 3..5. 5.5..5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation. 5 5 75 5 5 T C, Case [ ] Fig. Maximum Drain Current vs. Case
Physical Dimension D-PAK, 3L Dimensions are in millimeters, unless otherwise specified 5
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