BLF6G10-135RN; BLF6G10LS-135RN

Similar documents
BLF6G10LS-135R. 1. Product profile. Power LDMOS transistor. 1.1 General description. 1.2 Features

BLF6G10LS Product profile. Power LDMOS transistor. 1.1 General description. 1.2 Features

BLF7G22L-200; BLF7G22LS-200

BLF4G22-130; BLF4G22LS-130

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz

BLF7G20L-250P; BLF7G20LS-250P

BLA6H LDMOS avionics radar power transistor

BLF647P; BLF647PS. 1. Product profile. Broadband power LDMOS transistor. 1.1 General description. 1.2 Features and benefits

BLF8G20LS-400PV; BLF8G20LS-400PGV

BLF7G24L-160P; BLF7G24LS-160P

BLF4G10LS-120. UHF power LDMOS transistor. G p (db) P L (W)

Broadband LDMOS driver transistor. A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band.

BLL6G1214L Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

BLF7G27L-200PB. 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.

BLC9G20LS-160PV. 160 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 2000 MHz.

BLM6G10-30; BLM6G10-30G

BLC9G20XS-160AV. 160 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

DATA SHEET. BLF UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Mar 07.

DISCRETE SEMICONDUCTORS DATA SHEET M3D438. BLF1043 UHF power LDMOS transistor. Product specification Supersedes data of 2002 November 11.

BLC10G22LS-240PVT. 240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz.

BLF8G20LS-400PV; BLF8G20LS-400PGV

BLF888E; BLF888ES. UHF power LDMOS transistor

UHF variable capacitance diode. Voltage Controlled Oscillators (VCO) Electronic tuning in UHF television tuners

IMPORTANT NOTICE. use

BB Product profile. 2. Pinning information. 3. Ordering information. VHF variable capacitance diode. 1.1 General description. 1.

IMPORTANT NOTICE. use

PSMN D. N-channel TrenchMOS SiliconMAX standard level FET

BLF881; BLF881S. UHF power LDMOS transistor

PNP 5 GHz wideband transistor IMPORTANT NOTICE. use

NPN 4 GHz wideband transistor IMPORTANT NOTICE. use

PSMN026-80YS. N-channel LFPAK 80 V 27.5 mω standard level MOSFET

NPN 5 GHz wideband transistor IMPORTANT NOTICE. use

BF1108; BF1108R. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

N-channel TrenchMOS logic level FET

30 V, 230 ma P-channel Trench MOSFET

34 db, 870 MHz GaAs push-pull forward amplifier

20 V, 800 ma dual N-channel Trench MOSFET

60 V, 340 ma dual N-channel Trench MOSFET

60 V, 310 ma N-channel Trench MOSFET

BF909; BF909R. N-channel dual gate MOS-FETs IMPORTANT NOTICE. use

Planar PIN diode in a SOD523 ultra small SMD plastic package.

1 GHz, 22 db gain GaAs high output power doubler dbc CSO composite second-order V o = 48 dbmv at 862 MHz

30 / 30 V, 350 / 200 ma N/P-channel Trench MOSFET. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel)

1 GHz, 22 db gain GaAs high output power doubler

60 V, 320 ma N-channel Trench MOSFET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BF861A; BF861B; BF861C

Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.

60 V, 1 A PNP medium power transistors

60 / 50 V, 330 / 170 ma N/P-channel Trench MOSFET

BF1100; BF1100R IMPORTANT NOTICE. use

BC635; BCP54; BCX V, 1 A NPN medium power transistors

65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement

BAS16J. 1. Product profile. Single high-speed switching diode. 1.1 General description. 1.2 Features. 1.3 Applications. 1.4 Quick reference data

BUK A. N-channel TrenchMOS logic level FET

BUK A. N-channel TrenchMOS standard level FET

PMZ950UPEL. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMEG3030EP. 1. Product profile. 3 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

CLF1G ; CLF1G0060S-10

IMPORTANT NOTICE. use

BUK9Y19-75B. N-channel TrenchMOS logic level FET

50 V, 160 ma dual P-channel Trench MOSFET

Enhanced ultrafast dual rectifier diode. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I O(AV)

PMEG3020BER. 1. Product profile. 2 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

Two elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified

Dual P-channel intermediate level FET

Planar PIN diode in a SOD523 ultra small plastic SMD package.

BUK764R0-75C. N-channel TrenchMOS standard level FET. 12 V Motor, lamp and solenoid loads High performance automotive power systems

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

N-channel TrenchMOS logic level FET. High efficiency due to low switching and conduction losses

BF1118; BF1118R; BF1118W; BF1118WR

PMD5003K. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data

BAP Product profile. 2. Pinning information. 3. Ordering information. Silicon PIN diode. 1.1 General description. 1.2 Features and benefits

75 MHz, 30 db gain reverse amplifier

Dual rugged ultrafast rectifier diode, 20 A, 200 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

DISCRETE SEMICONDUCTORS DATA SHEET M3D058. BLF346 VHF power MOS transistor. Product specification Supersedes data of 1996 Oct 02.

PMZ550UNE. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

BB Product profile. 2. Pinning information. 3. Ordering information. FM variable capacitance double diode. 1.1 General description

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

200 MHz, 35 db gain reverse amplifier. High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC).

BSS138AKA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

20 V, 2 A P-channel Trench MOSFET

20 V, single P-channel Trench MOSFET

Four planar PIN diode array in SOT363 small SMD plastic package.

Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mw ElectroStatic Discharge (ESD) protection: 2 kv HBM

NX7002AK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

VHF variable capacitance diode

BLM7G1822S-40PB; BLM7G1822S-40PBG

PSMN5R0-100PS. N-channel 100 V 5 mω standard level MOSFET in TO-220. High efficiency due to low switching and conduction losses

BAS16VV; BAS16VY. Triple high-speed switching diodes. Type number Package Configuration. BAS16VV SOT666 - triple isolated BAS16VY SOT363 SC-88

NX3020NAK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMCM4401UNE. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

BTA202X series D and E

PMEG6010CEH; PMEG6010CEJ

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Passivated sensitive gate triac in a SOT54 plastic package. General purpose switching and phase control

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMZB350UPE. 1. Product profile. 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet. 1.1 General description

Transcription:

BLF6G0-5RN; BLF6G0LS-5RN Rev. 0 January 00 Product data sheet. Product profile. General description 5 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 000 MHz. Table. Typical performance Typical RF performance at T case = 5 C in a class-ab production test circuit. Mode of operation f V DS P L(AV) ACPR (MHz) (V) (W) (db) (%) (dbc) -carrier W-CDMA 869 to 894 8 6.5.0 8.0 9 [] [] Test signal: GPP; test model ; 64 DPCH; PAR = 7.5 db at 0.0 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.. Features Typical -carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 8 V and an I Dq of 950 ma: Average output power = 6.5 W Power gain =.0 db Efficiency = 8.0 % ACPR = 9 dbc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 000 MHz) Internally matched for ease of use Compliant to Directive 00/95/EC, regarding restriction of hazardous substances (RoHS)

. Applications. Pinning information RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 000 MHz frequency range Table. Pinning Pin Description Simplified outline Graphic symbol BLF6G0-5RN (SOT50A) drain gate source [] sym BLF6G0LS-5RN (SOT50B) drain gate source [] sym [] Connected to flange.. Ordering information Table. 4. Limiting values Type number Ordering information Package Name Description Version BLF6G0-5RN - flanged LDMOST ceramic package; mounting holes; SOT50A leads BLF6G0LS-5RN - earless flanged LDMOST ceramic package; leads SOT50B Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 604). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage - 65 V V GS gate-source voltage 0.5 + V I D drain current - A T stg storage temperature 65 +50 C T j junction temperature - 5 C BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 of

5. Thermal characteristics 6. Characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit R th(j-case) thermal resistance from T case =80 C; P L = 5 W BLF6G0-5RN 0.68 K/W junction to case BLF6G0LS-5RN 0.56 K/W 7. Application information Table 6. Characteristics T j = 5 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V (BR)DSS drain-source breakdown voltage V GS =0V; I D =0.8mA 65 - - V V GS(th) gate-source threshold voltage V DS = 0 V; I D = 80 ma.4.9.4 V V GSq gate-source quiescent voltage V DS = 8 V; I D = 950 ma.6..6 V I DSS drain leakage current V GS =0V; V DS =8V - - μa I DSX drain cut-off current V GS =V GS(th) +.75 V; 4 - A V DS =0V I GSS gate leakage current V GS =V; V DS = 0 V - - 00 na g fs forward transconductance V DS =0V; I D =9A 7 - S R DS(on) drain-source on-state resistance V GS =V GS(th) +.75 V; - 0. - Ω I D =6.A C rs feedback capacitance V GS =0V; V DS =8V; f=mhz -.0 - pf Table 7. Application information Mode of operation: -carrier W-CDMA; PAR 7.5 db at 0.0 % probability on CCDF; GPP test model ; -64 PDPCH; f = 87.5 MHz; f = 876.5 MHz; f = 886.5 MHz; f 4 = 89.5 MHz; RF performance at V DS =8V; I Dq = 950 ma; T case =5 C; unless otherwise specified; in a class-ab production test circuit. Symbol Parameter Conditions Min Typ Max Unit P L(AV) average output power - 6.5 - W power gain P L(AV) = 6.5 W 0.0.0 - db RL in input return loss P L(AV) = 6.5 W - 0.0 6.5 db drain efficiency P L(AV) = 6.5 W 6.0 8.0 - % ACPR adjacent channel power ratio P L(AV) = 6.5 W - 9 6.5 dbc 7. Ruggedness in class-ab operation The BLF6G0-5RN and BLF6G0LS-5RN are capable of withstanding a load mismatch corresponding to VSWR = 0 : through all phases under the following conditions: V DS =8V; I Dq =950mA; P L =5 W; f=894mhz. BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 of

4 (db) 00aah864 75 60 (%) 45 0 0 5 9 0 0 40 80 0 60 P L (W) Fig. V DS =8V; I Dq = 950 ma; f = 88 MHz. One-tone CW power gain and drain efficiency as function of load power; typical values 00aah865 60 0 00aah866 (db) (%) IMD (dbc) IMD 45 0 IMD5 0 40 IMD7 0 5 50 9 0 0 5 50 75 00 P L(PEP) (W) 60 0 5 50 75 00 P L(PEP) (W) V DS =8V; I Dq = 950 ma; f = 88 MHz (±00 khz). V DS =8V; I Dq = 950 ma; f = 88 MHz (±00 khz). Fig. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values Fig. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 4 of

4 00aah867 50 0 00aah868 (db) 40 (%) ACPR (dbc) 0 0 0 40 0 0 9 0 0 4 6 48 60 P L(AV) (W) 50 0 0 40 60 P L(AV) (W) V DS =8V; I Dq = 950 ma; f = 88 MHz; f =886MHz; carrier spacing 5 MHz. V DS =8V; I Dq = 950 ma; f = 88 MHz; f = 886 MHz; carrier spacing 5 MHz. Fig 4. -carrier W-CDMA power gain and drain efficiency as function of average load power; typical values Fig 5. -carrier W-CDMA adjacent power channel ratio as a function of average load power; typical values 8. Test information V GG V DD R C C8 C9 C0 C C8 R C0 R C4 L C6 input 50 Ω C C7 output 50 Ω C C7 C6 C5 C C C4 C5 C9 00aah869 Fig 6. The drawing is not to scale. Test circuit for operation at 800 MHz BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 5 of

R C8 C9 C8 L C0 Q C0 C R C C4 R C6 C C C5 C7 C9 C6 C7 IN 800-000 MHz V.0 C4 C5 C C OUT 800-000 MHz V.0 00aah870 Fig 7. The striplines are on a double copper-clad Taconic RF5 Printed-Circuit Board (PCB) with ε r =.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Component layout Table 8. List of components See Figure 6 and Figure 7. Component Description Value Remarks C, C, C0, C4, C7 multilayer ceramic chip capacitor 68 pf [] solder vertically C, C4, C5 multilayer ceramic chip capacitor 8. pf [] solder vertically C6, C7 multilayer ceramic chip capacitor 0 pf [] solder vertically C8, C9, C, C electrolytic capacitor 00 nf Vishay or capacitor of same quality. C, C5 multilayer ceramic chip capacitor 4.7 μf; 50 V [] C6 multilayer ceramic chip capacitor.0 pf [] solder vertically C8, C9, C0 electrolytic capacitor 0 μf; 6 V L ferrite SMD bead Ferroxcube BDS //4.6-4S or equivalent Q BLF6G0LS-5RN R, R, R SMD resistor 9. Ω; 0. W [] American Technical Ceramics type 00B or capacitor of same quality. [] TDK or capacitor of same quality. BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 6 of

9. Package outline Flanged LDMOST ceramic package; mounting holes; leads SOT50A D A F D U B q C c L H U p E E w M A M B M A b w M C M Q 0 5 0 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D E E F H L p Q q U U w w mm 4.7.4.8.57 0.5 0.08 0.0 9.6 9.96 9.66 9.50 9.0 9.5 9.5.4 0.89 9.94 8.9 5. 4..8..70.45 7.94 4.6.9 9.9 9.65 0.5 0.5 inches 0.86 0.5 0.505 0.495 0.006 0.00 0.788 0.77 0.786 0.774 0.74 0.66 0.75 0.64 0.045 0.05 0.785 0.745 0.0 0.70 0. 0. 0.067 0.057.00.45.5 0.90 0.80 0.0 0.0 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT50A 99--8 0-0-0 Fig 8. Package outline SOT50A BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 7 of

Earless flanged LDMOST ceramic package; leads SOT50B D A F D D U c L H U E E b w M D M Q 0 5 0 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D E E F H L Q U U w mm inches 4.7.4 0.86 0.5.8.57 0.505 0.495 0.5 0.08 0.006 0.00 0.0 9.6 0.788 0.77 9.96 9.66 0.786 0.774 9.50 9.0 0.74 0.66 9.5 9.5 0.75 0.64.4 0.89 0.045 0.05 9.94 8.9 0.785 0.745 5. 4. 0.0 0.70.70.45 0.067 0.057 0.70 0.45 0.85 0.805 9.9 9.65 0.90 0.80 0.5 0.00 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT50B 0-0-0 07-05-09 Fig 9. Package outline SOT50B BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 8 of

0. Abbreviations Table 9. Acronym GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wideband Code Division Multiple Access. Revision history Table 0. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G0-5RN_0LS-5RN_ 000 Product data sheet - BLF6G0-5RN_0LS-5RN_ Modifications Section. General description lower frequency range extended to 700 MHz from 800 MHz. Section. Features lower frequency range extended to 700 MHz from 800 MHz. Section. Applications lower frequency range extended to 700 MHz from 800 MHz. Section Legal information export control disclaimer added. BLF6G0-5RN_0LS-5RN_ 00900 Product data sheet - - BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 9 of

. Legal information. Data sheet status Document status [][] Product status [] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.. Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.. Disclaimers General Information in this document is believed to be accurate and reliable. However, does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an product can reasonably be expected to result in personal injury, death or severe property or environmental damage. accepts no liability for inclusion and/or use of products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 604) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities..4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G0-5RN_0LS-5RN_ NXP B.V. 00. All rights reserved. Product data sheet Rev. 0 January 00 0 of

4. Contents Product profile........................... General description...................... Features............................... Applications........................... Pinning information...................... Ordering information..................... 4 Limiting values.......................... 5 Thermal characteristics.................. 6 Characteristics.......................... 7 Application information................... 7. Ruggedness in class-ab operation......... 8 Test information......................... 5 9 Package outline......................... 7 0 Abbreviations........................... 9 Revision history......................... 9 Legal information....................... 0. Data sheet status...................... 0. Definitions............................ 0. Disclaimers........................... 0.4 Trademarks........................... 0 Contact information..................... 0 4 Contents.............................. Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 00. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: January 00 Document identifier: BLF6G0-5RN_0LS-5RN_