I F = I R = 100 ma, I rr = 0.1 I R, Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

Similar documents
DB4X501K0R Silicon epitaxial planar type

DB2J50100L DB2J50100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For high speed switching circuits. Internal Connection

BAS16 Silicon epitaxial planar type

DA3J101F0L DA3J101F0L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3

DA2J10100L DA2J10100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

DA4X106U0R Silicon epitaxial planar type

DA6X102S0R Silicon epitaxial planar type

BAS16 Silicon epitaxial planar type

DA6X106U0R Silicon epitaxial planar type

DB2W31800L DB2W31800L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 4. For rectification. Internal Connection

DA2J10400L DA2J10400L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

DA22F2100L DA22F2100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

DB2J41100L DB2J41100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

DA2S00100L DA2S00100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For band switching. Internal Connection

DSA7101. Silicon PNP epitaxial planar type. For low frequency amplification Complementary to DSC7101. Features. Marking Symbol: 4C.

DMC904F0. Silicon NPN epitaxial planar type. For high frequency amplification. Features. Marking Symbol: D3. Basic Part Number.

1 000 pcs / reel (standard) Max 40. Min - Symbol VR VF IF = 1.0 A

Packaging 1. Cathode 2. Anode V Zener operating resistance. 40 Reverse current IR VR = 2.0 V

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

130 Reverse current IR VR = 1 V. 20 A Temperature coefficient of zener voltage *3 SZ IZ = 5 ma mv/ C Note) 1.

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification DMG20401 in SMini6 type package

DB2L33500L1 For rectification

DME20B01. Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification. Features. Marking Symbol: A3

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits DMG26401 in SMini6 type package

Maintenance/ Discontinued

DB2L32400L For rectification

Min. Max 40. Symbol VR V Reverse Current IR VR = 40 V Terminal Capacitance Ct VR = 10 V, f = 1 MHz VF IF = 1.0 A

DB2F43100L For rectification

Maintenance/ Discontinued

FK Silicon N-channel MOS FET. For switching circuits. Overview. Package. Features. Marking Symbol: CV. Packaging

1.0 V Zener voltage *1, *2 VZ IZ = 5 ma Zener operating resistance RZ IZ = 5 ma. 40 Zener rise operating resistance RZK IZ = 0.

MTM232232LBF Silicon N-channel MOSFET

MTM761110LBF MTM761110LBF. Silicon P-channel MOSFET. for Switching. Internal Connection. Pin name

MTM232270LBF Silicon N-channel MOSFET

Maintenance/ Discontinued

FM6K62010L FM6K62010L. Silicon N-channel MOSFET(FET) Silicon epitaxial planar type(sbd) Doc No. TT4-EA Revision. 3

MTM861280LBF MTM861280LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 2. For Switching. Internal Connection.

FK330309EL FK330309EL. Silicon N-channel MOSFET For switching circuits. Doc No. TT4-EA Revision. 2. Internal Connection.

Maintenance/ Discontinued

FK6K02010L FK6K02010L. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin Name

FK L Silicon N-channel MOS FET

Maintenance/ Discontinued

FK L FK L. Silicon N-channel MOSFET. Doc No. TT4-EA Revision. 4. For switching FK in SMini3 type package

LNJ757W86RA. High Bright Surface Mounting Chip LED. ESS Type. Absolute Maximum Ratings T a = 25 C. Lighting Color

MTM861270LBF MTM861270LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 4. For Switching. Internal Connection.

FCAB22370L1 Gate resistor installed Dual N-channel MOS FET

MTM761100LBF MTM761100LBF. Silicon P-channel MOSFET For Switching. Doc No. TT4-EA Revision. 2. Internal Connection. Pin Name

Maintenance/ Discontinued

Maintenance/ Discontinued

FG R FG R. Silicon N-channel MOSFET(FET1) Silicon P-channel MOSFET(FET2) Doc No. TT4-EA Revision. 2.

FC8J33040L FC8J33040L. Dual N-channel MOSFET. Doc No. TT4-EA Revision. 2. For switching For DC-DC Converter. Internal Connection.

FC R FC R. Dual N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin name

FC R FC R. Dual N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin name

FK6K0335ZL Resistors, Zener Diode installed N-channel MOS FET

FC R FC R. Dual N-channel MOSFET. For switching. Internal Connection. Pin name

Maintenance/ Discontinued

FA6K3342ZL Zener Diode installed separate type dual P-channel MOS FET

MTM763200LBF MTM763200LBF. Silicon N-channel MOSFET (FET1) Silicon P-channel MOSFET (FET2) Doc No. TT4-EA Revision. 2

FK L FK L. Silicon N-channel MOSFET. Doc No. TT4-EA Revision. 2. For switching FK in SSSMini3 type package

FK8V03040L Silicon N-channel MOSFET

Maintenance/ Discontinued

SC L Asymmetric Dual Silicon N-ch Power MOS FET

Maintenance/ Discontinued

Maintenance/ Discontinued

FCAB21520L1 Gate resistor installed Dual N-channel MOS FET

3 000 pcs / reel (standard) ± to Tch Tstg Rth(ch-a)

DATA SHEET. Part No. AN17821A

Maintenance/ Discontinued

FC6B22500L Gate resistor installed Dual N-channel MOS FET

MTM232270LBF MTM232270LBF. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching MTM13227 in SMini3 type package

MTM232230LBF MTM232230LBF. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 3. For switching. Internal Connection.

Maintenance/ Discontinued

FC6B21150L Gate resistor installed Dual N-channel MOS FET

Maintenance/ Discontinued

FCAB22370L Gate resistor installed Dual N-channel MOS FET

Maintenance/ Discontinued

Maintenance/ Discontinued

FC4B21320L Gate resistor installed Dual N-channel MOS FET

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays

Maintenance/ Discontinued

Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F I F = 10 ma V V

Maintenance/ Discontinued

Maintenance/ Discontinued

XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Composite Transistors. For switching/digital circuits

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Ultra small surface mounting type

LNCT22PK01WW. Description. Package. Feature. Pin assignment. Application Optical disk drive Sensing Industrial use. Absolute Maximum Ratings 3)

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

LNCQ28PS01WW. Description. Package. Features. Pin assignment. Applications. Absolute Maximum Ratings. Electrical and Optical Characteristics

Operating voltage Vop V Wavelength λ nm

Transcription:

Silicon epitaxial planar type For small current rectification DB2J316 in SSMini2 type package Unit: mm Features Low forward voltage V F Short reverse recovery time t rr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol:C7 Packaging 00L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings T a = 25 C Parameter Symbol Rating Unit Reverse voltage V R 30 V Repetitive peak reverse voltage V RRM 30 V Forward current (Average) I F(AV) 100 ma Peak forward current I FM 300 ma Non-repetitive peak forward surge current * 1 I FSM 1 A Junction temperature T j 125 C Operating ambient temperature T opr 40 to +85 C Storage temperature T stg 55 to +125 C Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) 1: Cathode 2: Anode Panasonic JEITA Code SSMini2-F5-B SC-79 SOD-523 Electrical Characteristics T a = 25 C±3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F I F = 100 ma 0.55 V Reverse current I R V R = 30 V 15 µa Terminal capacitance C t V R = 10 V, f = 1 MHz 2 pf Reverse recovery time * 1 t rr I F = I R = 100 ma, I rr = 0.1 I R, R L = 100 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 0.8 ns 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz *1: t rr measurement circuit Bias Application Unit (N-50BU) Input Pulse Output Pulse Pulse Generator (PG-10N) R s = 50 Ω A Wave Form Analyzer (SAS-8130) R i = 50 Ω V R t r t p 10% 90% t = 2 µs p t r = 0.35 ns δ = 0.05 t I F t rr I = 0.1 I rr R I F = 100 ma I R = 100 ma R L = 100 Ω t Publication date: May 2013 Ver. DED 1

Forward current I F (A) 1 10 1 10 2 10 3 10 4 I F V F I R V R C t V R Pulse test T a = 125 C 100 C 85 C 25 C 40 C Reverse current I R (A) 10 2 100 C 10 3 T a = 125 C 10 4 10 5 10 6 10 7 10 8 85 C 25 C 40 C Terminal capacitance C t (pf) 10 8 6 4 2 T a = 25 C 10 5 0 0.2 0.4 0.6 0.8 1.0 Forward voltage V F (V) 10 9 0 10 20 30 Reverse voltage V R (V) 0 0 10 20 30 Reverse voltage V R (V) Ver. DED 2

SSMini2-F5-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. DED 3

20100202 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Panasonic: 00L