PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM 3 krads (Si) 35m 3A* Description IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 9MeV/(mg/cm 2 ). Their combination of low RDS(on) and faster switching times reduces the power losses and increases power density in today s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. QPL Part Number JANSF2N7648T3 Low-Ohmic TO-257AA Features Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Electrically Isolated Ceramic Eyelets Light Weight ESD Rating: Class 2 per MIL-STD-75, Method Absolute Maximum Ratings Symbol Parameter Value Units I D @ V GS = 2V, T C = 25 C Continuous Drain Current 3* I D2 @ V GS = 2V, T C = C Continuous Drain Current 22 A I DM @T C = 25 C Pulsed Drain Current P D @T C = 25 C Maximum Power Dissipation 75 W Linear Derating Factor.6 W/ C V GS Gate-to-Source Voltage ± V E AS Single Pulse Avalanche Energy 65 mj I AR Avalanche Current 3 A E AR Repetitive Avalanche Energy 7.5 mj dv/dt Peak Diode Recovery dv/dt 3 V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Lead Temperature (.63 in./.6mm from case for s) 3 Weight 4.3 (Typical) g * Current is limited by package For Footnotes, refer to the page 2. International Rectifier HiRel Products, Inc.
Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma BV DSS / T J Breakdown Voltage Temp. Coefficient. V/ C Reference to 25 C, I D =.ma R DS(on) Static Drain-to-Source On-Resistance 35 m V GS = 2V, I D2 = 22A V GS(th) Gate Threshold Voltage 2. 4. V V GS(th) / T J Gate Threshold Voltage Coefficient -8.9 mv/ C V DS = V GS, I D =.ma Gfs Forward Transconductance 4 S V DS = 5V, I D2 = 22A I DSS. V DS = 8V, V GS = V Zero Gate Voltage Drain Current µa V DS = 8V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = V na Gate-to-Source Leakage Reverse - V GS = -V Q G Total Gate Charge 44 I D = 3A Q GS Gate-to-Source Charge nc V DS = 5V Q GD Gate-to-Drain ( Miller ) Charge 2 V GS = 2V t d(on) Turn-On Delay Time 25 V DD = 5V t r Rise Time 35 I D = 3A ns t d(off) Turn-Off Delay Time 45 R G = 7.5 t f Fall Time 3 V GS = 2V Ls +L D Total Inductance 6.8 nh Measured from Drain lead (6mm /.25 in from package) to Source lead (6mm/.25 in from package) C iss Input Capacitance 8 V GS = V C oss Output Capacitance 44 pf V DS = 25V C rss Reverse Transfer Capacitance 3.3 ƒ =.MHz R G Gate Resistance. ƒ =.MHz, open drain Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) 3* I SM Pulsed Source Current (Body Diode) V SD Diode Forward Voltage.2 V T J = 25 C,I S = 3A, V GS = V t rr Reverse Recovery Time 4 2 ns T J = 25 C, I F = 3A, V DD 25V Q rr Reverse Recovery Charge 8 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) * Current is limited by package Thermal Resistance Symbol Parameter Min. Typ. Max. Units R JC Junction-to-Case.67 C/W R JA Junction-to-Ambient (Typical Socket Mount) 8 C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = V, starting T J = 25 C, L = 2.5mH, Peak I L = 22A, V GS = V I SD 3A, di/dt 37A/µs, V DD V, T J 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with V GS Bias. 2 volt V GS applied and V DS = during irradiation per MIL-STD-75, Method 9, condition A. Total Dose Irradiation with V DS Bias. 8 volt V DS applied and V GS = during irradiation per MlL-STD-75, Method 9, condition A. 2 International Rectifier HiRel Products, Inc. A
Radiation Characteristics IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation Up to 3 krads (Si) Symbol Parameter Units Test Conditions Min. Max. BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma V GS(th) Gate Threshold Voltage 2. 4. V V DS = V GS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = V I GSS Gate-to-Source Leakage Reverse - na V GS = -V I DSS Zero Gate Voltage Drain Current. µa V DS = 8V, V GS = V R DS(on) R DS(on) Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (Low-Ohmic TO-257AA) 36 m V GS = 2V, I D2 = 22A 35 m V GS = 2V, I D2 = 22A V SD Diode Forward Voltage.2 V V GS = V, I S = 3A. Part numbers () and IRHYS9A33CM (JANSF2N7648T3) IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @ VGS = V @ VGS = -V @ VGS = -5V @ VGS = -V 37 ± 5% 47 ± 7.5% 5 ± 7.5% 59.8 ± 5% 753 ± 7.5% 6 ± 7.5% 89.8 ± 5% 55 ± 7.5% 82 ± 7.5% Bias VDS (V) 8 6 4-2 -4-6 -8 - LET = 37 ± 5% LET = 59.8 ± 5% LET = 89.8 ± 5% Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc.
R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V 2V V 8.V 7.V 6.V BOTTOM 5.V VGS TOP 5V 2V V 8.V 7.V 6.V BOTTOM 5.V 5.V 5.V µs PULSE WIDTH, Tj = 25 C. V DS, Drain-to-Source Voltage (V) µs PULSE WIDTH, Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2. I D = 3A.5 T J = 5 C T J = 25 C. V DS = 5V s PULSE WIDTH 2 4 6 8 2 4 V GS, Gate-to-Source Voltage (V) V GS = 2V.5-6 -4-4 6 8 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature R DS(on), Drain-to -Source On Resistance (m 9 8 7 I D = 3A R DS (on), Drain-to -Source On Resistanc (m ) 8 7 6 5 T J = 5 C 6 5 4 T J = 5 C 4 3 T J = 25 C 3 T J = 25 C V GS = 2V 4 6 8 2 4 6 8 4 6 8 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 4 International Rectifier HiRel Products, Inc.
C, Capacitance (pf) I SD, Reverse Drain Current (A) I D, Drain Current (A) V GS, Gate-to-Source Voltage (V) V (BR)DSS, V GS(th) Gate threshold Voltage (V) 25 I D =.ma 4. 3.5 3. Drain-to-Source Breakdown Voltage (V) 2.5 5 2..5. I D = 5µA I D = 25µA I D =.ma ID = 5mA 5-6 -4-4 6 8 4 6 4 36 3 28 T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature V GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6.5-6 -4-4 6 8 4 6 T J, Temperature ( C ) Fig 8. Typical Threshold Voltage Vs Temperature I D = 3A V DS = 8V V DS = 5V V DS = V 24 C oss 2 C iss 6 8 8 4 C rss 4 FOR TEST CIRCUIT SEE FIGURE 7 5 5 25 3 35 4 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage 35 3 LIMITED BY PACKAGE 25 T J = 5 C T J = 25 C 5 V GS = V..4.6.8..2.4.6.8 2. V SD, Source-to-Drain Voltage (V) Fig. Typical Source-Drain Diode Forward Voltage 5 25 5 75 25 5 T C, Case Temperature ( C) Fig 2. Maximum Drain Current Vs.Case Temperature 5 International Rectifier HiRel Products, Inc.
I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) OPERATION IN THIS AREA LIMITED BY RDS(on) 8 6 TOP BOTTOM I D 5A 22A 3A s 4. Tc = 25 C Tj = 5 C Single Pulse ms ms DC V DS, Drain-to-Source Voltage (V) 25 5 75 25 5 Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig 4. Maximum Avalanche Energy Vs. Drain Current D =.5. PDM...2 t t2 Thermal Response ( Z thjc )..5 SINGLE PULSE. ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-5.... t, Rectangular Pulse Duration (sec) Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 International Rectifier HiRel Products, Inc.
V (BR)DSS tp I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Gate Charge Waveform Fig 7b. Gate Charge Test Circuit Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 7 International Rectifier HiRel Products, Inc.
Case Outline and Dimensions - Low-Ohmic TO-257AA A.3 [.5].66 [.4].42 [.4] Ø 3.8 [.5] 3.56 [.4] 5.8 [.] 4.83 [.9].4 [.45].89 [.35] 3.63 [.537] 3.39 [.527] 6.89 [.665] 6.39 [.645].92 [.43].42 [.4] B 2 3 C 6.5 [.65] 5.24 [.6].7 [.28] MAX. 2.54 [.] 2X 3X Ø.88 [.35].64 [.25] 3.5 [.] Ø.5 [.] C A B NOTES:. DIMENSIONING & TOLERANCING PER ANSI Y4.5M-994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA. LEAD ASSIGNMENT = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: + (866) 95-959 and International Tel: +49 89 234 65555 Leominster, Massachusetts 453, USA Tel: + (978) 534-5776 San Jose, California 9534, USA Tel: + (48) 434-5 Data and specifications subject to change without notice. 8 International Rectifier HiRel Products, Inc.
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