Data Sheet. AMMP to 32 GHz GaAs High Linearity LNA in SMT Package. Description. Features. Specifications (Vdd = 4.

Similar documents
Data Sheet. AMMP to 21 GHz GaAs High Linearity LNA in SMT Package. Description. Features. Specifications (Vdd = 4.0V, Idd = 120mA) Applications

Data Sheet. AMMP to 32 GHz GaAs High Linearity LNA in SMT Package. Description. Features. Specifications (Vdd = 4.

Data Sheet. AMMP GHz GaAs MMIC LNA/IRM Receiver in SMT Package. Description. Features. Specifications Vd=3.0V (83mA), Vg=-1.0V (0.

Data Sheet. AMMP to 32 GHz GaAs Low Noise Amplifier. Description. Features. Specifications (Vd=3.0V, Idd=65mA) Applications.

AMGP GHz 4W Power Amplifier Preliminary Data Sheet Feb Package Diagram

Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram

Data Sheet. AMMP GHz Variable Attenuator. Features. Description. Applications. Package Diagram. Functional Block Diagram

Data Sheet. VMMK to 4 GHz GaAs High Linearity LNA in Wafer Level Package. Features. Description. Specifications (Vdd = 3.

Features. Applications. Symbol Parameters/Conditions Units Min. Max.

Features. Applications

Data Sheet AMMC GHz Output 2 Active Frequency Multiplier. Description. Features. Applications

Data Sheet. AMMC GHz 0.2 W Driver Amplifier. Features. Description. Applications

Data Sheet. VMMK GHz E-pHEMT Wideband Amplifier in Wafer Level Package. Description. Features. Specifications (6GHz, 5V, 25mA Typ.

Data Sheet. MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function 3FYM. Description. Features.

AMMC GHz Output x2 Active Frequency Multiplier

Features. = +25 C, Vdd = 5V, Idd = 85 ma*

Data Sheet MGA High Gain, High Linearity Active Bias Low Noise Amplifier. Description. Features. Specifications

Features. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open

MGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications. Applications. All other pins NC Not Connected

MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias

Data Sheet. VMMK GHz Positive Gain Slope Low Noise Amplifier in SMT Package. Features. Description

Data Sheet. MGA High Gain, High Linearity, Active Bias, Low Noise Amplifier. Description. Features. Specifications

Data Sheet AMMC GHz Driver Amplifier. Features. Description. Applications

MGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications

Data Sheet. VMMK GHz UWB Low Noise Amplifier in SMT Package. Features. Description

Data Sheet. ALM GHz GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.

Data Sheet. ALM GHz 2.40 GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.

87x. MGA GHz 3 V Low Current GaAs MMIC LNA. Data Sheet

Data Sheet. MGA Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V, 10 ma (Typ.

CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description

MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

Data Sheet. MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function 31YM. Description. Features

TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance

TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance

Features. = +25 C, Vdd 1, 2, 3 = +3V

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Data Sheet. ALM GHz 1.0GHz 2 Watt High Linearity Amplifier. Description. Features. Specifications. Component Image.

Data Sheet. ALM GHz 3.9GHz 2 Watt High Linearity Amplifier. Description. Features. Component Image. Specifications WWYY XXXX

Data Sheet. VMMK GHz Variable Gain Amplifier in SMT Package. Features. Description. Specifications (6 GHz, Vdd = 5 V, Zin = Zout = 50 Ω)

Data Sheet. AMMC GHz 1W Power Amplifier. Features. Description. Applications

17-24 GHz Linear Driver Amplifier. S11 and S22 (db) -15

MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias

Data Sheet. MGA Dual LNA for Balanced Application MHz. Features. Description. Typical Performances. Component Image.

MGA-645T6 Data Sheet Description Features Component Image Typical Performance 4FYM Pin Configuration GND Top View Applications Simplified Schematic

Features. Specifications. Applications

Features. Specifications

1-24 GHz Distributed Driver Amplifier

MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier. Features. Specifications. Applications. RFin

Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1

Data Sheet. ALM MHz 870 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature. Features.

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

Data Sheet. MGA-632P8 Low Noise, High Linearity Active Bias Low Noise Amplifier. Features. Description. Specifications.

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance

MMA C3 6-22GHz, 0.1W Gain Block Data Sheet

Data Sheet. ALM High Linearity MHz Variable Gain Amplifier. Description. Features. Typical Performances.

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Data Sheet. AMMC GHz Amplifier. Description. Features. Applications

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic

MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

Features. Specifications

MGA Current Adjustable Low Noise Amplifier

Data Sheet. MGA-565P8 20 dbm P sat. High Isolation Buffer Amplifier. 1Bx. Features. Description. Specifications. Applications. Simplified Schematic

Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*

CMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description

Data Sheet. MGA-685T6 Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V 10 ma (Typ.

CMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description

Features. Specifications. Note:

CMD GHz Distributed Driver Amplifier. Features. Functional Block Diagram. Description

CMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description

Data Sheet. MGA High Linearity ( ) GHz Power Amplifier Module. Features. Description. Specifications. Applications.

Application Note 5012

17-24 GHz Linear Driver Amplifier. S11 and S22 (db -15. TriQuint Semiconductor: www. triquint.com (972) Fax (972)

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

MMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012

Features. Specifications

Features. Specifications

MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier. Features. Specifications. Applications. RFin

CMD GHz Distributed Low Noise Amplifier RFIN

Features. Specifications. Applications. Vcc

Data Sheet VMMK to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package. Features. Description. Specifications.

Features. = +25 C, Vdd = 5V

Features. Preliminary. = +25 C, IF = 1 GHz, LO = +13 dbm*

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range

GHz Low Noise Amplifier

Data Sheet. ALM W Analog Variable Gain Amplifier. Description. Features. Specifications. Pin connections and Package Marking.

Data Sheet AMMC KHz 80 GHz TWA. Description. Features. Typical Performance (Vd=5V, Idsq=0.1A) Component Image.

CMD GHz Low Noise Amplifier

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

MLA-01122B-H GHz Low Noise MMIC Amplifier in Hermetic Package

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Features. = +25 C, As a Function of LO Drive & Vdd. IF = 1 GHz LO = -4 dbm & Vdd = +4V

Transcription:

AMMP-622 18 to 2 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Avago s AMMP-622 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface mount package. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or subsequential low noise block or a transmitter driver. The MMIC has gain stages and requires a V, 18mA power supply for optimal performance. Since this MMIC covers several bands, it can reduce part inventory and increase volume purchase options The MMIC is fabricated using PHEMT technology. The surface mount package eliminates the need of chip & wire assembly for lower cost. This MMIC is fully SMT compatible with backside grounding and I/Os. Pin Connections (Top View) Features Surface Mount Package,. x. x 1.2 mm Single Power Supply Pin Unconditionally Stable Ohm Input and Output Match Specifications (Vdd =.V, Idd = 18mA) RF Frequencies: 18-2 GHz High Output IP: 29dBm High Small-Signal Gain: 2dB Typical Noise Figure: db Applications 8 1 2 7 6 pf pf Pin Function 1 2 Vdd RFout 6 Vg 7 8 RFin Microwave Radio systems Satellite VSAT, DBS Up/Down Link LMDS & Pt-Pt mmw Long Haul Broadband Wireless Access (including 82.16 and 82. WiMax) WLL and MMDS loops Commercial grade military Top view Package base: GND Note: 1. This MMIC uses depletion mode phemt devices. 2. Negative voltage is used for the gate bias Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note AR: Electrostatic Discharge Damage and Control

Absolute Maximum Ratings [1] Parameters / Conditions Symbol Unit Max Drain to Ground Voltage Vdd V. Gate-Drain Voltage Vgd V -8 Drain Current Idd ma Gate Bias Voltage Vg V +.8 Gate Bias Current Ig ma 1 RF CW Input Power Max Pin dbm Max channel temperature Tch C + Storage temperature Tstg C -6 + Maximum Assembly Temp Tmax C 26 for s 1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd, Vg, Ig and Pin were determined at an ambient temperature of 2 C unless noted otherwise. DC Specifications/ Physical Properties [2] Parameter and Test Condition Symbol Unit Min Typ Max Drain Supply Current (Vd=. V) Idd ma 1 Drain Supply Voltage Vd V Gate Bias Current Ig ma.1 Gate Bias Voltage Vg V -1.1 -.9 -.8 Thermal Resistance() θjc C/W.1 2. Ambient operational temperature TA=2 C unless noted. Channel-to-backside Thermal Resistance (Tchannel = C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 2 C calculated from measured data. AMMP-622 RF Specifications [] TA= 2 C, Vdd =. V, Idd =1 ma, Zo= W Parameters and Test Conditions Freq. (GHz) Symbol Units Minimum Typical Maximum Sigma Small-Signal Gain [], 26, 29 Gain db 19 2 Noise Figure into W [], 26, 29 NF db. Output Power at 1dB Gain Compression P-1dB dbm 18 Output Power at db Gain Compression Psat dbm Output Third Order Intercept Point OIP dbm 29 Isolation Iso db - Input Return Loss RLin db - Output Return Loss RLout db -. Refer to characteristic plots for detailed individual frequency performance.. All tested parameters guaranteed with measurement accuracy ± 1.dB for gain and ±.db for NF. 2

AMMP-622 Typical Performance [1], [2] (T A = 2 C, Vdd=V, Idd=18mA, Z in = Z out = W unless noted) S21 (db) NoiseFigure (db) 2 1 1 2 Figure 1. Small-signal Gain 18 22 2 26 28 2 Figure 2. Noise Figure S11 (db) - - -1 - OP1dB (dbm) 1-2 1 2 Figure. Input Return Loss 18 22 2 26 28 2 Figure. Output P-1dB S22 (db) - - -1 - -2 1 2 Figure. Output Return Loss OIP (dbm) 2 1 18 22 2 26 28 2 Figure 6. Output IP Note: 1. S-parameters are measured on R&D Eval Board as shown in Figure. Effects of connectors and board traces are included in results. 2. Noise Figure is measured on R&D Eval Board as shown in Figure, and with a db pad at the input. Board and Connector losses are already deembeded from the data.

AMMP-622 Typical Performance (cont.) (T A = 2 C, Vdd=V, Idd=18mA, Z in = Z out = W unless noted) S12 (db) - - - - -6-7 1 2 Figure 7. Isolation Idd (ma) 17 1 8.. Vdd (V) Figure 8. Total Current S21 (db) V V V 1 2 Figure 9. Gain over Vdd NoiseFigure (db) 2 V V 1 V 18 22 2 26 28 2 Figure. Noise Figure over Vdd S11 (db) - - -1 - -2 V V V 1 2 S22 (db) - - -1 - -2 - V V V 1 2 Figure 11. Input Return Loss Over Vdd Figure 12. Output Return Loss Over Vdd

AMMP-622 Typical Performance (cont.) (T A = 2 C, Vdd=V, Idd=18mA, Z in = Z out = W unless noted) OP1dB (dbm) 2 1 V V V 18 22 2 26 28 2 OIP (dbm) 2 V 1 V V 18 22 2 26 28 2 Figure 1. Output P-1dB over Vdd Figure 1. Output IP Over Vdd S21 (db) 2C 8C NoiseFigure (db) 2 1 -C 2C -C 1 2 8C 18 22 2 26 28 2 Figure 1. Gain over Temp Figure 16. Noise Figure over Temp - - S11 (db) - -1 - -2 2C -C 8C 1 2 S22 (db) - -1-2C -2 8C -C - 1 2 Figure 17. Input Return Loss Over Temp Figure 18. Output Return Loss Over Temp

AMMP-622 Application and Usage IN 8 Vdd 1 2 Top View Package base: GND Figure 19. Usage of the AMMP-622 7 Vg V 6.1uF pf pf.1uf ~ -.9V OUT Biasing and Operation The AMMP-622 is normally biased with a positive drain supply connected to the VDD pin and a negative gate bias through bypass capacitors as shown in Figure 19. The recommended drain supply voltage is V and the gate bias is approximately -.9V to get the corresponding drain current of 18mA. It is important to have.1uf bypass capacitors and the capacitor should be placed as close to the component as possible. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise (Topt) matching. After adjusting the gate bias to obtain 18mA at Vdd = V, the AMMP-622 can be safely biased at V or V (while fixing the gate bias) as desired. At V, the performance is an optimal compromise between power consumption, gain and power/linearity. It is both applicable to be used as a low noise block or driver. At V, the amplifier is ideal as a front end low noise block where linearity is not highly required. At V, the amplifier can provide 1 to 2dBm more output power for LO or transmitter driver applications where high output power and linearity are often required. Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions. Figure. Evaluation/Test Board (available to qualified customer request) Vd1 Vd2 In Matching Network Matching Network Matching Network Out Vg1 Figure 21. Simplified AMMP-622 Schematic Vg2 6

Recommended SMT Attachment for x Package Ground vias should be solder filled NOTES: 1. Dimensions are in Inches [Millimeters] 2. All grounds must be soldered to PCB RF. Material is Rogers RO,. thick Figure 22. PCB Land Pattern and Stencil Layouts Temp ( C) Peak = ± C Melting point = 218 C The AMMP Packaged Devices are compatible with high volume surface mount PCB assembly processes. The PCB material and mounting pattern, as defined in the data sheet, optimizes RF performance and is strongly recommended. An electronic drawing of the land pattern is available upon request from Agilent Sales & Application Engineering. Manual Assembly Follow ESD precautions while handling packages. Handling should be along the edges with tweezers. Recommended attachment is conductive solder paste. Please see recommended solder reflow profile. Neither Conductive epoxy or hand soldering is recommended. Apply solder paste using a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical and electrical performance. Follow solder paste and vendor s recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temp. to avoid damage due to thermal shock. Packages have been qualified to withstand a peak temperature of 26 C for seconds. Verify that the profile will not expose device beyond these limits. A properly designed solder screen or stencil is required to ensure optimum amount of solder paste is deposited onto the PCB pads. The recommended stencil layout is shown in Figure 22. The stencil has a solder paste deposition opening approximately 7% to 9% of the PCB pad. Reducing stencil opening can potentially generate more voids underneath. On the other hand, stencil openings larger than % will lead to excessive solder paste smear or bridging across the I/O pads. Considering the fact that solder paste thickness will directly affect the quality of the solder joint, a good choice is to use a laser cut stencil composed of.127mm ( mils) thick stainless steel which is capable of producing the required fine stencil outline. The most commonly used solder reflow method is accomplished in a belt furnace using convection heat transfer. The suggested reflow profile for automated reflow processes is shown in Figure 2. This profile is designed to ensure reliable finished joints. However, the profile indicated in Figure 1 will vary among different solder pastes from different manufacturers and is shown here for reference only. Ramp 1 Preheat Ramp 2 Reflow Cooling Seconds Figure 2. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste

Package, Tape & Reel, and Ordering Information AMMP-622 Part Number Ordering Information Part Number Devices Per Container Container AMMP-622-BLKG Antistatic bag AMMP-622-TR1G 7 Reel AMMP-622-TR2G 7 Reel Top View Side View Carrier Tape and Pocket Dimensions.11 Back View For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 6 Avago Technologies Limited. All rights reserved. AV1-2EN - November 29, 6