TLP251. Inverter For Air Conditioner Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive. Pin Configuration (top view)

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TOSHIB Photocoupler Gals Ired & Photo-IC Inverter For ir Conditioner Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive Unit: mm The TOSHIB consists of a Gals light emitting diode and a integrated photodetector. This unit is -lead DIP package. is suitable for gate driving circuit of IGBT or power MOS FET. Especially is capable of direct gate drive of lower power IGBTs. ( to ) Input threshold current: =m(max.) Supply current (I CC ): m(max.) Supply voltage ( ): 0 Output current (I O ): ±0.(max.) Switching time (t plh / t phl ): μs(max.) Isolation voltage: 200rms(min.) UL recognized: UL77, file no.e79 cul approved:cs Component cceptance Service No., File No.E79 Option(D) DE pproved : DIN EN077-- (Note) TOSHIB 0C Weight: 0. g (typ.) Pin Configuration (top view) (Note):When a EN077-- approved type is needed, Please designate Option(D) 2 7 Truth Table Tr Tr2 Input On On Off LED Off Off On : N.C. 2 : node : Cathode : N.C. : GND : (Output) 7 : N.C. : Schematic 2 I CC (T r ) F I O (T r 2) GND 0.μF bypass capcitor must be connected between pin and (see Note ). Start of commercial production 992-0 207-2-2

bsolute Maximum Ratings (Ta = 2 C) Characteristic Symbol Rating Unit Forward current 20 m Forward current derating (Ta 70 C) Δ / ΔTa 0. m / C LED Peak transient forward current (Note ) PT Reverse voltage R Diode power dissipation PD 0 mw Diode power dissipation derating (Ta 70 C) PD/ C -0.72 mw/ C Junction temperature T j 2 C H peak output current (P W 2.0μs, f khz) (Note 2) L peak output current (P W 2.0μs, f khz) (Note 2) I OPH 0. I OPL 0. Detector Output voltage Supply voltage Output voltage derating (Ta 70 C) (Ta 70 C) (Ta = C) 2 (Ta 70 C) (Ta = C) 2 Δ / ΔTa 0.7 / C Supply voltage derating (Ta 70 C) Δ / ΔTa 0.7 / C Output Power dissipation PO 00 mw Output Power dissipation derating (Ta 70 C ) ΔP O / C -. mw/ C Junction temperature T j 2 C Operating frequency (Note ) f 2 khz Operating temperature range T opr 20 to C Storage temperature range T stg to 2 C Lead soldering temperature(0s) T sol 20 C Isolation voltage (C, min.,r.h. 0%) (Note ) B S 200 rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note : Pulse width P W μs, 00pps Note 2: Expornential waveform Note : Expornential waveform, I OPH 0.2( 2.0μs), I OPL +0.2( 2.0μs) Note : Device considerd a two terminal device: Pins, 2, and shorted together, and pins,, 7 and shorted together. 2 207-2-2

Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input current, on (Note ) (ON) 7 0 m Input voltage, off F(OFF) 0 0. Supply voltage 0 0 Peak output current I OPH / I OPL ±0. Operating temperature T opr 20 2 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. dditionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note : Input signal rise time(fall time)<0.μs. Electrical Characteristics (Ta = 20 to 70 C, unless otherwise specified) Characteristic Symbol Test Cir cuit Test Condition Min. Typ.* Max. Unit Input forward voltage F = 0 m, Ta = 2 C.. Temperature coefficient of forward voltage Δ F / ΔTa = 0 m 2.0 m / C Input reverse current I R R =, Ta = 2 C 0 μ Input capacitance C T = 0, f = MHz, Ta = 2 C 20 pf Output current H level I OPH L level I OPL 2 =0 (Note ) = 0m = =0m = 2. 0. 0.2 0. 0.2 Output voltage H level H L level L = +, EE = R L = 200Ω, = m = +, EE = R L = 200Ω, F = 0..2. 2. H level I CCH = 0, = 0m Ta = 2 C 7. Supply current L level I CCL = 0, = 0m = 0, = 0m Ta = 2 C m = 0, = 0m Threshould input current Threshold input voltage Output L H Output H L LH FHL = +, EE = R L = 200Ω, > 0 = +, EE = R L = 200Ω, < 0.2 m 0. Supply voltage 0 Capacitance (input output) Resistance (input output) R s C s Note : ll typical values are at Ta=2 C Note : Duration of IO time 0μs s = 0, f = MHz Ta = 2 C s = 00, Ta = 2 C R.H. 0%.0 2.0 pf 0 2 0 Ω 207-2-2

Switching Characteristics (Ta = 20 to 70 C, unless otherwise specified) Propagation delay time Characteristic Common mode transient immunity at high level output Common mode transient immunity at low level output Symbol Test Cir cuit Test Condition Min. Typ.* Max. Unit L H t plh = m 0.2.0 = +, EE = μs H L t phl R L = 200 Ω 0.2.0 C MH C ML CM = 00, = m, = 0, Ta = 2 C CM = 00, = 0m, = 0, Ta = 2 C 000 / μs 000 / μs Note: ll typical values are at Ta=2 C Test Circuit : IOPH Test Circuit 2 : IOPL 0.μF 0.μF - I OPH I OPL - Test Circuit : OH Test Circuit : OL 0.μF 0.μF R L F R L H L EE EE 207-2-2

Test Circuit : tplh, tphl, tr, tf 0.μF t r t f H 0% R L GND L 0% 00Ω EE t p LH t p HL Test Circuit : CMH, CML SW B 0.μF CM + - 00 CM 0% 90% t r t f C ML 0() = tr ( μs) SW: ( = m) 2 C MH C MH 0() = t f ( μs) SW: B( = 0) C HL C ML (C MH ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. 207-2-2

F Δ F /ΔTa Forward current IF (m) 00 Ta = 2 C 0 0 0 0. 0. 0. 0.0 0.0 Forward voltage temperature coefficient ΔF /ΔTa (m/ C) -2. -2. -2.2-2.0 -. -. 0.0.0.2... 2.0 -. 0. 0. 0. 0 0 Forward voltage F () Forward current IF (m) 0 Ta 0 Ta llowable forward current IF (m) 0 20 0 llowable supply voltage CC () 0 20 0 0 0 20 0 0 0 00 0 0 20 0 0 0 00 mbient temperature Ta ( C) mbient temperature Ta ( C) I OPH, I OPL Ta 0. PW 2.0 μs, f KHz llowable peak output current IOPH, IOPL () 0. 0. 0.2 0. 0 0 20 0 0 0 00 mbient temperature Ta ( C) 207-2-2

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