Highly Linear and Low Noise Amplifer for Global Navigation Satellite Systems - GPS/GLONASS/Galileo/COMPASS from 1550 MHz to Applications Application Note AN251 Revision: Rev. 1.3 RF and Protection Devices
Edition 2011-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Application Note AN251 Revision History: Previous Revision: AN251 Rev.1.2, 2011-07-22 Page Subjects (major changes since last revision) 1 Title updated Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-02-24 Application Note AN251, Rev. 1.3 3 / 24
Table of Content, List of Figures and Tables Table of Content 1 GPS Front-End LNA for High Performance Integrated Solution... 6 2 Introduction... 7 3 Application Circuit... 10 4 Typical Measurement Results... 11 5 Measured Graphs for Galileo, GPS and GLONASS bands... 13 6 Miscellaneous Measured Graphs... 19 7 Evaluation Board... 21 8 Authors... 23 Application Note AN251, Rev. 1.3 4 / 24
Table of Content, List of Figures and Tables List of Figures Figure 1 in TSNP-7-6 Package (1.40mm x 1.26mm x 0.38mm)... 6 Figure 2 Block diagram of the for GNSS High Bands 1559-1615MHz applications... 9 Figure 3 application circuit... 10 Figure 4 Power gain of for Galileo, GPS and GLONASS bands... 13 Figure 5 Narrowband power gain of for Galileo, GPS and GLONASS bands... 13 Figure 6 Input matching of for Galileo, GPS and GLONASS bands... 14 Figure 7 Output matching of for Galileo, GPS and GLONASS bands... 14 Figure 8 Reverse isolation of for Galileo, GPS and GLONASS bands... 15 Figure 9 Noise figure of for Galileo, GPS and GLONASS bands... 15 Figure 10 Input 1 db compression point of at supply voltage of 1.8V for Galileo, GPS and Figure 11 GLONASS bands... 16 Input 1 db compression point of at supply voltage of 2.8V for Galileo, GPS and GLONASS bands... 16 Figure 12 Carrier and intermodulation products of for GPS band at Vcc=1.8V... 17 Figure 13 Carrier and intermodulation products of for GPS band at Vcc=2.8V... 17 Figure 14 Carrier and intermodulation products of for GLONASS band at Vcc=1.8V... 18 Figure 15 Carrier and intermodulation products of for GLONASS band at Vcc=2.8V... 18 Figure 16 Stability factor k of upto 10GHz... 19 Figure 17 Stability factor µ1 of upto 10GHz... 19 Figure 18 Stability factor µ2 of upto 10GHz... 20 Figure 19 Input and output matching for Galileo, GPS and GLONASS bands with Vcc=1.8V... 20 Figure 20 Input and output matching for Galileo, GPS and GLONASS bands with Vcc=2.8V... 21 Figure 21 Populated PCB picture of... 21 Figure 22 PCB layer stack... 22 List of Tables Table 1 Pin Definition... 9 Table 2 Switching Mode... 9 Table 3 Bill-of-Materials... 10 Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V... 11 Table 5 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V... 12 Application Note AN251, Rev. 1.3 5 / 24
GPS Front-End LNA for High Performance Integrated Solution 1 GPS Front-End LNA for High Performance Integrated Solution 1.1 Features High gain: 15.5 db High out-of-band input 3 rd -order intercept point: +10 dbm High input 1dB compression point: -5 dbm Low noise figure: 0.7 db Low current consumption: 4.4 ma Operating frequency: 1550- Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Very small TSNP-7-6 leadless package B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only three external SMD components necessary 2 kv HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package Figure 1 in TSNP-7-6 Package (1.40mm x 1.26mm x 0.38mm) 1.2 Applications - Global Positioning System (GPS) - GLONASS (Russian GNSS) - Galileo (European GNSS) - COMPASS (Chinese Beidou Navigation System) Application Note AN251, Rev. 1.3 6 / 24
Introduction 2 Introduction The is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS) applications. It is based on Infineon Technologies B7HF Silicon- Germanium (SiGe:C) technology, enabling a cost-effective solution in a very small TSNP-7-6 package with ultra low noise figure, high gain, high linearity and low current consumption over a wide range of supply voltages from 3.6 V down to 1.5 V. The GNSS satellites are at an orbit altitude of more than 20,000 km away from earth s surface and transmit power in the range of +47 dbm. After taking losses (atmospheric, antenna etc.) into account, the received signal strength at the GNSS device input is very low in the range of -130 dbm. The ability of the GNSS device to receive such a low signal strength and provide meaningful information to the end-user depends strongly on the noise figure of the GNSS receive chain. This ability which is called receiver sensitivity can be improved by using a low-noise amplifier with low noise figure and high gain at the input of the receiver chain. The improved sensitivity results in a shorter Time-To-First-Fix (TTFF), which is the time required for a GNSS receiver to acquire satellite signals and navigation data, and calculate a position and also improved coverage area. Noise figure of the LNA defines the overall noise figure of the GNSS receiver system. This is where excels by providing noise figure as low as 0.7 db and high gain of 15.5 db, thereby improving the receiver sensitivity significantly. The ever growing demand to integrate more and more functionality into one device leads to many challenges when transmitter/receiver has to work simultaneously without degrading the performance of each other. In today s smart-phones a GNSS receiver simultaneously coexists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers transmit high power in the range of +24 dbm which due to insufficient isolation couple to the GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver frequency band. For example, GSM 1712.5 MHz mixes with UMTS 1850 MHz to produce third-order-product exactly at GPS. To quantify the effect, shows out-of-band input IP3 at GPS of +10.6 dbm as a result of frequency mixing between GSM 1713 MHz and UMTS 1851 MHz with power levels of -20 dbm. has a high in-band input 3 rd order intercept point (IIP3) of +0.37 dbm, so that it is especially suitable for the GPS function in mobile phones. Application Note AN251, Rev. 1.3 7 / 24
Introduction also offers sufficient rejection at 787.76MHz, which is band-13 of upcoming LTE and whose 2 nd harmonic is at GPS frequency, to meet specifications of 2 nd harmonic of band- 13 without any additional circuitry. has input referred band-13 second harmonic level of -48.5 dbm when the input signal of 787.76 MHz at -25 dbm is applied. The output of the is internally matched to 50 Ω, and a DC blocking capacitor is integrated on-chip, thus no external component is required at the output. Depending on the application, three or four external components on the input side are required. The device also integrates an on-chip ESD protection which can resist until 2 kv (referenced to Human Body Model). The integrated power on/off feature provides for low power consumption and increased stand-by time for GNSS handsets. Moreover, the low consumption (4.4 ma) makes the device suitable for portable technology like GNSS receivers and mobiles phones. The Internal circuit diagram of the is presented in Figure 2. Table 1 show the pin assignment of. Table 2 shows the truth table to turn on/off by applying different voltage to the PON pin. Application Note AN251, Rev. 1.3 8 / 24
Introduction Figure 2 Block diagram of the for GNSS High Bands 1559-1615MHz applications Table 1 Pin Definition Pin Symbol Comment 1 DEG Emitter degneration 2 AI Amplifier Input 3 BIAS Collector to Base bias 4 AO Amplifier Output 5 VCC Voltage supply 6 PON Power On/Off mode 7 VSS Grounding Table 2 Switching Mode Mode Symbol ON/OFF Control Voltage Min Max On PON, on 1.0V VCC Off PON, off 0 0.4 Application Note AN251, Rev. 1.3 9 / 24
Application Circuit 3 Application Circuit 3.1 Schematic Diagram Figure 3 application circuit 1 Table 3 Bill-of-Materials Symbol Value Unit Package Manufacturer Comment C1 (optional) 1 µf 0402 Various RF bypass for low frequencies C2 (optional) 33 pf 0402 Various DC block C3 1 pf 0402 Various Input matching L1 82 nh 0402 Bias feed, RF choke Murata LQW series self resonance frequency @ 1.575 GHz L2 7.3 nh 0402 Murata LQW series Input matching / noise matching N1 TSNP-7-6 Infineon SiGe LNA M1 2 ~ 0.55 nh Microstrip line for gain setting 1 This application circuit is implemented using high-q inductors. For application with low-q inductors please refer to application note AN253 2 Total board inductance = inductance of the microstrip line (~500pH) + inductance of via (~50pH) Please refer to application note AN258 for more details on realization of small inductor values on a PCB by using microstriplines. Application Note AN251, Rev. 1.3 10 / 24
Typical Measurement Results 4 Typical Measurement Results Table 4 and Table 5 show typical measurement results of the application circuit shown in Figure 3. The values given in this table include losses of the board and the SMA connectors if not otherwise stated. Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 1.8 V DC Current Icc 4.6 ma Frequency System Frequency Range Sys Galileo/COMPASS GPS GLONASS Freq 1559-1593 1575 1602- Gain G 15.5 15.4 15.2 db Noise Figure NF 0.76 0.77 0.76 db Input Return Loss RLin 11.1 11.3 11.4 db PCB and SMA connectors of 0.05dB losses substracted Output Return Loss Reverse Isolation RLout 15.9 16.6 16.8 db IRev 20.2 20.1 19.9 db Input P1dB IP1dB -7.5-7.2-6.4 dbm f galileo = f gps = f GLONASS = Output P1dB OP1dB 7.0 7.2 7.8 dbm LTE band-13 2 nd Harmonic Input IP3 In-band Output IP3 In-band Input IP3 out-of-band H2 input referred -48.2 dbm IIP3-0.13-0.03 1.06 dbm OIP3 15.5 15.5 16.4 dbm IIP3o 11 dbm Stability k >1 -- f IN = 787.76 MHz P IN = -25 dbm f 1gal/gps = f 2gal/gps = 1576MHz f 1GLONASS =1609 MHz f 2GLONASS =1610 MHz Input power= -30dBm f 1 = 1713 MHz f 2 = 1851 MHz Input power= -20dBm Unconditionnally Stable from 0 to 10GHz Application Note AN251, Rev. 1.3 11 / 24
Table 5 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 4.7 ma Frequency System Frequency Range Sys Galileo/COMPASS GPS Glonass Freq 1559-1593 1575 1602- Gain G 15.6 15.5 15.3 db Noise Figure NF 0.77 0.76 0.76 db Input Return Loss RLin 11.7 12.0 12.2 db PCB and SMA connectors of 0.05dB losses substracted Output Return Loss Reverse Isolation RLout 15.3 16.2 17.4 db IRev 20.6 20.5 20.2 db Input P1dB IP1dB -4.6-4.4-3.6 dbm f galileo = f gps = f GLONASS = Output P1dB OP1dB 10.0 10.1 10.7 dbm LTE band-13 2 nd Harmonic Input IP3 In-band Output IP3 In-band Input IP3 out-of-band H2 input referred -48.5 dbm IIP3 0.37 0.37 1.23 dbm OIP3 15.9 15.9 16.6 dbm IIP3o 10.6 dbm Stability k >1 -- f IN = 787.76 MHz P IN = -25 dbm f 1gal/gps = f 2gal/gps = 1576MHz f 1GLONASS =1609 MHz f 2GLONASS =1610 MHz Input power= -30dBm f 1 = 1713 MHz f 2 = 1851 MHz Input power= -20dBm Unconditionnally Stable from 0 to 10GHz Application Note AN251, Rev. 1.3 12 / 24
S21 (db) S21 (db) Measured Graphs for Galileo, GPS and GLONASS bands 5 Measured Graphs for Galileo, GPS and GLONASS bands 20 15 10 15.5 db 15.44 db 15.23 db 15.56 db Gain 15.5 db 15.32 db Gain at Vcc=1.8V Gain at Vcc=2.8V 5 0-5 -10-15 -20 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Figure 4 Power gain of for Galileo, GPS and GLONASS bands 16 15.8 15.6 15.4 15.556 db Narrowband gain 15.502 db 15.324 db Gain at Vcc=1.8V Gain at Vcc=2.8V 15.2 15 15.498 db 15.438 db 15.234 db 14.8 14.6 14.4 14.2 14 1500 1525 1550 1575 1600 1625 1650 1675 1700 Figure 5 Narrowband power gain of for Galileo, GPS and GLONASS bands Application Note AN251, Rev. 1.3 13 / 24
S22 (db) S11 (db) Measured Graphs for Galileo, GPS and GLONASS bands 0 Input matching -5 S11 at Vcc=1.8V S11 at Vcc=2.8V -10-11.3 db -11.05 db -11.35 db -15-11.7 db -11.99 db -12.15 db -20 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Figure 6 Input matching of for Galileo, GPS and GLONASS bands 0 Output matching -5 S22 at Vcc=1.8V S22 at Vcc=2.8V -10-15 -20-15.86 db -16.56 db -16.84 db -15.28 db -16.21 db -17.39 db 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Figure 7 Output matching of for Galileo, GPS and GLONASS bands Application Note AN251, Rev. 1.3 14 / 24
NF (db) S12 (db) Measured Graphs for Galileo, GPS and GLONASS bands -10 Isolation S12 at Vcc=1.8V -15-20 -20.17 db -20.08 db -19.9 db -20.24 db S12 at Vcc=2.8V -25-30 -20.56 db -20.45 db -35-40 -45 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Figure 8 Reverse isolation of for Galileo, GPS and GLONASS bands 1 Noise figure NF at Vcc=1.8V NF at Vcc=2.8V 0.9 0.8 0.759 0.774 0.756 0.7 0.765 0.76 0.755 0.6 0.5 1559 1567 1575 1583 1591 1599 1607 1615 Figure 9 Noise figure of for Galileo, GPS and GLONASS bands Application Note AN251, Rev. 1.3 15 / 24
Gain (db) Gain (db) Measured Graphs for Galileo, GPS and GLONASS bands 20 18-25 dbm 15.55 db Compression point at 1dB with Vcc=1.8V P1dB at Vcc=1.8V Galileo (1559MHz) P1dB at Vcc=1.8V GPS (1575MHz) P1dB at Vcc=1.8V GLONASS (1615MHz) 16 14-25 dbm 15.3 db -25 dbm 15.32 db -7.524 dbm 14.55 db -6.38 dbm 14.3 db 12-7.214 dbm 14.32 db 10-25 -20-15 -10-5 0 Power (dbm) Figure 10 Input 1 db compression point of at supply voltage of 1.8V for Galileo, GPS and GLONASS bands 20 18 Compression point at 1dB with Vcc=2.8V P1dB at Vcc=2.8V Galileo (1559MHz) P1dB at Vcc=2.8V GPS (1575MHz) P1dB at Vcc=2.8V GLONASS (1615MHz) 16 14 12-25 dbm 15.6 db -25 dbm 15.39 db -25 dbm 15.41 db -4.641 dbm 14.6 db -4.386 dbm 14.41 db -3.646 dbm 14.39 db 10-25 -20-15 -10-5 0 Power (dbm) Figure 11 Input 1 db compression point of at supply voltage of 2.8V for Galileo, GPS and GLONASS bands Application Note AN251, Rev. 1.3 16 / 24
Power (dbm) Power (dbm) Measured Graphs for Galileo, GPS and GLONASS bands 0 Intermodulation for GPS band -10-20 -30-14.28 1576 MHz -14.32-40 -50-60 -70 1577 MHz -73.78-80 -90-100 1573 1574 1575 1576 1577 1578 Figure 12 Carrier and intermodulation products of for GPS band at Vcc=1.8V 0 Intermodulation for GPS band -10-20 -30-14.23 1576 MHz -14.27-40 -50-60 -70 1577 MHz -74.62-80 -90-100 1573 1574 1575 1576 1577 1578 Figure 13 Carrier and intermodulation products of for GPS band at Vcc=2.8V Application Note AN251, Rev. 1.3 17 / 24
Power (dbm) Power (dbm) Measured Graphs for Galileo, GPS and GLONASS bands 0 Intermodulation for GLONASS band -10-20 -30 1609 MHz -14.46 1610 MHz -14.53-40 -50-60 -70-80 1611 MHz -76.1-90 -100 1607 1608 1609 1610 1611 1612 Figure 14 Carrier and intermodulation products of for GLONASS band at Vcc=1.8V 0 Intermodulation for GLONASS band -10-20 -30 1609 MHz -14.39 1610 MHz -14.46-40 -50-60 -70 1611 MHz -76.43-80 -90-100 1607 1608 1609 1610 1611 1612 Figure 15 Carrier and intermodulation products of for GLONASS band at Vcc=2.8V Application Note AN251, Rev. 1.3 18 / 24
6 Miscellaneous Measured Graphs Miscellaneous Measured Graphs 3 Stability K factor Stability K factor at Vcc=1.8V Stability K factor at Vcc=2.8V 2 1.13 1 1.106 0 100 2100 4100 6100 8100 10000 Figure 16 Stability factor k of upto 10GHz 3 Stability Mu1 factor Stability Mu1 factor at Vcc=1.8V Stability Mu1 factor at Vcc=2.8V 2 1.642 1 1.509 0 100 2100 4100 6100 8100 10000 Figure 17 Stability factor µ1 of upto 10GHz Application Note AN251, Rev. 1.3 19 / 24
-1.0 0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 Miscellaneous Measured Graphs 3 Stability Mu2 factor Stability Mu2 factor at Vcc=1.8V Stability Mu2 factor at Vcc=2.8V 2 1.349 1 1.276 0 100 2100 4100 6100 8100 10000 Figure 18 Stability factor µ2 of upto 10GHz Input Input and Output matching with Vcc=1.8V Output 0.6 0.8 1.0 1.0 2.0 Swp Max 1615MHz 0.4 3.0 0.2 r 0.791711 x 0.475553 r 1.1184 x 0.582512 4.0 5.0 10.0 r 0.733601 x -0.0844743 r 0.815933 x -0.187204-10.0-0.2-5.0-4.0-0.4-3.0-2.0-0.6-0.8 Swp Min 1559MHz Figure 19 Input and output matching for Galileo, GPS and GLONASS bands with Vcc=1.8V Application Note AN251, Rev. 1.3 20 / 24
-1.0 0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 Evaluation Board Input Input and Output matching with Vcc=2.8V Output 0.6 0.8 1.0 1.0 2.0 Swp Max 1615MHz 0.4 3.0 0.2 r 0.785904 x 0.426873 r 1.09257 x 0.524272 4.0 5.0 10.0 r 0.710489 x -0.0552515 r 0.804721 x -0.147024-10.0-0.2-5.0-4.0-0.4-3.0-2.0-0.6-0.8 Swp Min 1559MHz Figure 20 Input and output matching for Galileo, GPS and GLONASS bands with Vcc=2.8V 7 Evaluation Board Figure 21 Populated PCB picture of Application Note AN251, Rev. 1.3 21 / 24
Evaluation Board Vias Rogers 4003C, 0.2mm Copper 35µm FR4, 0.8mm Figure 22 PCB layer stack Application Note AN251, Rev. 1.3 22 / 24
Authors 8 Authors Anthony Thomas, Engineer of Business Unit RF and Protection Devices. Jagjit Singh Bal, Engineer of Business Unit RF and Protection Devices. Dr. Chih-I Lin, Senior staff engineer of Business Unit RF and Protection Devices. Application Note AN251, Rev. 1.3 23 / 24
w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN251