NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

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4-Channel EMI Filter with Integrated ESD Protection The is a four channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 5 pf deliver a cutoff frequency of 25 MHz and stop band attenuation greater than 35 db from 900 MHz to 2.4 GHz. This performance makes the part ideal for parallel interfaces with data rates up to 83 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth and WLAN signals. The is available in the low profile 8 lead 2.0 mm x 2.0 mm DFN8 surface mount package. Features/Benefits ±5 kv ESD Protection on each channel (IEC6000 4 2 Level 4, Contact Discharge) R/C Values of 200 and 5 pf deliver Exceptional S2 Performance Characteristics of 25 MHz f 3dB and 35 db Stop Band Attenuation from 900 MHz to 2.4 GHz Integrated EMI/ESD System Solution in DFN Package Offers Exceptional Cost, System Reliability and Space Savings This is a Pb Free Device Applications EMI Filtering for LCD and Camera Data Lines EMI Filtering and Protection for I/O Ports and Keypads ORDERING INFORMATION Device Package Shipping TG MARKING DIAGRAM DFN8 CASE 506AQ PLASTIC RS M RS = Specific Device Code M = Month Code = Pb Free Package (Note: Microdot may be in either location) DFN8 (Pb Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD80/D. Filter + ESD n R = 200 C d = 5 pf C d = 5 pf See Table for pin description Figure. Electrical Schematic Filter + ESD n (S2) db 0 5 0 5 20 25 Channels, 4 30 35 40 45 Channels 2, 3 50.0E+06.0E+07.0E+08.0E+09.0E+0 FREQUENCY (Hz) Figure 2. Insertion Loss Characteristics Semiconductor Components Industries, LLC, 203 February, 203 Rev. 2 Publication Order Number: /D

2 3 4 GND 8 7 6 5 (Bottom View) Figure 3. Pin Diagram Table. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter & 8 Filter + ESD Channel Filter 2 2 & 7 Filter + ESD Channel 2 Filter 3 3 & 6 Filter + ESD Channel 3 Filter 4 4 & 5 Filter + ESD Channel 4 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6000 4 2 Contact Discharge V PP 5 kv Steady State Power per Resistor P R 00 mw Steady State Power per Package P T 400 mw Operating Temperature Range T OP 40 to 85 C Storage Temperature Range T STG 55 to 50 C Maximum Lead Temperature for Soldering Purposes (.8 in from case for 0 seconds) T L 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V RWM 5.0 V Breakdown Voltage V BR I R =.0 ma 6.0 7.0 8.0 V Leakage Current I R V RWM = 3.3 V 00 na Resistance R A I R = 20 ma 70 200 230 Diode Capacitance C d V R = 2.5 V, f =.0 MHz 2 5 8 pf Line Capacitance C L V R = 2.5 V, f =.0 MHz 24 30 36 pf 3 db Cut Off Frequency (Note ) f 3dB Above this frequency, appreciable attenuation occurs 25 MHz 6 db Cut Off Frequency (Note ) f 6dB Above this frequency, appreciable attenuation occurs 200 MHz. 50 source and 50 load termination. 2

TYPICAL PERFORMANCE CURVES (T A = 25 C unless otherwise specified) (S2) db 0 5 0 5 20 25 Channels, 4 30 35 40 45 Channels 2, 3 50.0E+06.0E+07.0E+08.0E+09.0E+0 FREQUENCY (Hz) Figure 4. Insertion Loss Characteristics NORMALIZED CAPACITANCE 2.0.5.0 0.5 0 0.0 2.0 3.0 4.0 5.0 REVERSE BIASED VOLTAGE (V) Figure 5. Typical Line Capacitance vs. Reverse Bias Voltage (Normalized to Capacitance @ 2.5 V) 208 206 204 RESISTANCE ( ) 202 200 98 96 94 92 40 30 20 0 0 0 20 30 40 50 60 70 80 90 TEMPERATURE ( C) Figure 6. Typical Resistance vs. Temperature 3

Theory of Operation The combines ESD protection and EMI filtering conveniently into a small package for today s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application. Application Example The accepted practice for specifying bandwidth in a filter is to use the 3 db cutoff frequency. Utilizing points such as the 6 db or 9 db cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of s and 0 s transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the pattern -0--0 such that for a signal with a data rate of 00 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series approximation of a square wave, shown below in Equations and 2 in the Fourier series approximation. From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed. Therefore, to reasonably pass a square wave of frequency x the minimum filter bandwidth necessary is 3x. All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 7 and apply three different data waveforms. To calculate these three different frequencies, the 3 db, 6 db, and 9 db bandwidths will be used. Equation : x(t) 2 2 a n 2n sin((2n ) t) 0 (eq. ) Equation 2 (simplified form of Equation ): x(t) 2 2 sin( 0t) sin(3 0t) 3 sin(5 0t) (eq. 2) 5 3 db 6 db 9 db Magnitude (db) f f 2 f 3 00k M 0M 00M G 0G Frequency (Hz) Figure 7. Filter Bandwidth From the above paragraphs it is shown that the maximum supported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data rate multiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies. Table 2. Frequency Chart Bandwidth Maximum Supported Frequency Third Harmonic Frequency 3 db 00 MHz 33.33 MHz (f ) 00 MHz 6 db 200 MHz 66.67 MHz (f 2 ) 200 MHz 9 db 300 MHz 00 MHz (f 3 ) 300 MHz 4

Considering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter, the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 8a. If a signal with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 8b. In the case that a 00 MHz signal is input to this filter, the third harmonic term is attenuated even further and results in even more rounding of the signal edges as is shown in Figure 8c. The result is the degradation of the data being transmitted making the digital data ( s and 0 s) more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity. While some filter products may specify the 6 db or 9 db bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. To ensure the best signal integrity possible, it is best to use the 3 db bandwidth to calculate the achievable data rate. Input Waveform a) Frequency = f Output Waveform Input Waveform b) Frequency = f 2 Output Waveform Input Waveform c) Frequency = f 3 Output Waveform Figure 8. Input and Output Waveforms of Filter 5

PACKAGE DIMENSIONS DFN8 2x2, 0.5P CASE 506AQ ISSUE B PIN ONE REFERENCE 2X 0.0 C 2X 0.0 0.0 C 0.08 C NOTE 4 D ÇÇ ÇÇ C TOP VIEW SIDE VIEW A A B E (A3) A C L SEATING PLANE DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS EXPOSED Cu L MOLD CMPD DETAIL B ALTERNATE CONSTRUCTION L NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.5 AND 0.30 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A 0.80.00 A 0.00 0.05 A3 0.20 REF b 0.20 0.30 D 2.00 BSC D2.0.30 E 2.00 BSC E2 0.50 0.70 e 0.50 BSC K 0.20 L 0.25 0.45 L 0.5 DETAIL A 8X L D2 4 E2 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE.40 8X 0.57 K e e/2 8 5 BOTTOM VIEW 8X b 0.0 C 0.05 C A B NOTE 3 0.75 2.30 8X 0.50 0.30 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth a registered trademark of Bluetooth SIG. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 8027 USA Phone: 303 675 275 or 800 344 3860 Toll Free USA/Canada Fax: 303 675 276 or 800 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 790 290 Japan Customer Focus Center Phone: 8 3 587 050 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative /D