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Ultra low dropout, 500mA, CMOS LDO Http://www.sh-willsemi.com Descriptions The series are ultra low dropout, Low quiescent current, high PSRR CMOS LDO. The dropout voltage is 130mV (Typ.) at 500mA load current. Using CMOS construction, the quiescent current consumed by the is typically 150uA over the entire input voltage range, making it attractive for consumer, networking applications that demand high output current. The series are available in wide output voltage range version from 1.2V to V with 0.1V step. VOUT 5 SOT-23-5L NC 4 The series offer thermal shutdown (OTP) and current limit functions, to assure the stability of chip and power system at wrong condition, and it uses trimming technique to guarantee output voltage accuracy within ±2%. 1 2 3 VIN GND EN Pin Configuration (Top View) 5 4 The regulators are available in SOT-23-5L packages. Standard products are Pb-free and Halogen-free. Features Input voltage : 2.5V~5.5V Output voltage : 1.2V, 1.8V, V Output current : 500mA (Or upon request) PSRR : 65dB @ 1KHz Dropout voltage : 130mV @ =0.5A Output noise : uv Quiescent current : 150μA Typ. WS** YYWW 1 2 3 WS = Device code ** = Voltage code (33: V) YY = Year code WW = Week code Marking Order Information For detail information, Please refer to page 9. Applications LCD TV STB Computer, Graphic card Network communication equipments Others portable electronics devices Will Semiconductor Ltd. 1 May. 2014 Rev1.6

Typical Application Pin Description VIN 4.7uF 1 2 5 VOUT 4.7uF PIN Symbol Description 1 VIN Input 2 GND Ground ON 3 4 3 EN Enable, Active High 4 NC Not connect OFF 5 VOUT Output Block Diagram VIN VOUT Current Limit V REF EN Enable Control OTP GND Will Semiconductor Ltd. 2 May. 2014 Rev1.6

Absolute Maximum Ratings Parameter Symbol Value Unit Input voltage range -0.3~6.5 V Output voltage range -0.3~ V Power dissipation * 1 * 3 0.7 W P D Power dissipation * 2 * 3 0.5 W Thermal resistance * 1 180 C/W R θja Thermal resistance * 2 250 C/W Junction temperature T J 150 Lead temperature(10s) T L 260 Storage temperature Tstg -55 ~ 150 HBM ±8000 V ESD Ratings MM ±400 V Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. *1: Surface mounted on FR-4 Board using 1 square inch pad size, dual side, 1oz copper *2: Surface mounted on FR-4 board using minimum pad size, 1oz copper *3: Power dissipation is calculate by P D = ( - ) x Recommend Operating Ratings Parameter Symbol Value Unit Operating Supply voltage 2.5~5.5 V Operating Temperature Range Topr -40~85 Will Semiconductor Ltd. 3 May. 2014 Rev1.6

Electronics Characteristics (Ta=25, = +1V, C IN =C OUT =4.7uF, unless otherwise noted) Output Voltage Parameter Symbol Condition Min. Typ. Max. Unit <1.5V, =2.5V, =1mA 1.5V, =1mA Dropout Voltage V DROP =*0.98, =1A 250 450 mv - 30mV Current Limit I LIM =5V 0.65 A Line Regulation V LINE =V, =4.3~6.0V, =1mA * 0.98 + 30mV * 1.02 V 5 10 mv Load Regulation V Load =V, =1~500mA 10 30 mv Quiescent Current I Q =V, =0 150 200 ua Shut-down Current I SHDN V EN = 0V 0.1 1.0 ua Power Supply Ripple Rejection PSRR =(+1V) DC+0.2V P-P F=1KHz,=10mA =(+1V) DC+0.2V P-P F=10KHz, =10mA 65 58 db Output noise voltage e NO 10Hz to KHz, C OUT=4.7μF µv P-P EN logic high voltage V ENH =5.5V, =1mA 1.2 V EN logic low voltage V ENL =5.5V, =0mA 0.4 V Thermal shutdown threshold T SD 165 Thermal shutdown hysteresis T SD 30 Will Semiconductor Ltd. 4 May. 2014 Rev1.6

Output Voltage: Output Voltage: Output Voltage: Output Voltage: Quiescent Current: I Q (ua) Quiescent Current: I Q (ua) Typical characteristics (Ta=25, = +1V, C IN =C OUT =4.7uF, unless otherwise noted) 200 190 180 170 160 150 140 130 120 110 =V =0mA 4.0 4.5 5.0 5.5 6.0 Input Voltage: Quiescent current vs. Supply voltage 300 250 200 150 50 =V =0mA 0-50 -25 0 25 50 75 125 150 Ambient Temperature: ( ) Quiescent current vs. Ambient temperature =600mA 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 Input Voltage: Output voltage vs. Supply voltage =1mA -50-25 0 25 50 75 125 150 Ambient Temperature: ( ) Output voltage vs. Ambient temperature =5.5V =4.2V = -40 =V 0 200 300 400 500 600 Output Current: (ma) Output voltage vs. Output current =5.5V =4.2V = 25 =V 0 200 300 400 500 600 Output Current: (ma) Output voltage vs. Output current Will Semiconductor Ltd. 5 May. 2014 Rev1.6

Power Supply Ripple Rejection: PSRR (db) Power Supply Ripple Rejection: PSRR (db) Output Voltage: Dropout Voltage: V DROP (mv) =5.5V = 85 =4.2V =V 0 200 300 400 500 600 Output Current: (ma) 300 250 200 150 50 =V = 25 O C = 85 O C = -40 O C 0 0 200 300 400 500 600 Output Current: (ma) 90 80 70 60 50 40 30 20 10 Output voltage vs. Output current = 4.3V+0.2V P-P = V = 10mA 0 10 0 00 Ripple Frequency (HZ) PSRR 90 80 70 60 50 40 30 20 10 Dropout voltage vs. Output current = V+0.2V P-P = 1.8V = 10mA I O 0 10 0 00 Ripple Frequency (HZ) PSRR Startup with EN Shutdown with EN Will Semiconductor Ltd. 6 May. 2014 Rev1.6

Line Regulation Load Regulation Will Semiconductor Ltd. 7 May. 2014 Rev1.6

Package outline dimensions SOT-23-5L Symbol Dimensions In Millimeters Min. Typ. Max. A 1.050-1.250 A1 0.000-0. A2 1.050-1.150 b 0.300 0.4 0.500 c 0. - 0.200 D 20 20 E 1.500 1.6 1.700 E1 2.650 50 e 0.950 (Basic) e1 1.800 1.9 2.000 L 0.300 0.45 0.600 θ 0 o - 8 o Will Semiconductor Ltd. 8 May. 2014 Rev1.6

ORDER INFORMATION Ordering No. Package Marking Operating Temperature Shipping 12-5/TR 1.2 SOT-23-5L WS12/YYWW -40 ~ +85 C 3000/Tape and Reel 18-5/TR 1.8 SOT-23-5L WS18/YYWW -40 ~ +85 C 3000/Tape and Reel 30-5/TR SOT-23-5L WS30/YYWW -40 ~ +85 C 3000/Tape and Reel 33-5/TR SOT-23-5L WS33/YYWW -40 ~ +85 C 3000/Tape and Reel Will Semiconductor Ltd. 9 May. 2014 Rev1.6