AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggedness Product Summary V CE I C (T C = C) V 3A V CE(sat) (T C =5 C).V Applications Welding Machines Motor Drives UPS & Solar Inverters Very High Switching Frequency Applications Top View TO-47 C G AOKS3BD G C E E Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol AOKS3BD Units Collector-Emitter Voltage V Gate-Emitter Voltage V GE Spike Continuous Collector Current Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE V, Limited by T Jmax Power Dissipation V CE V GE V SPIKE T C =5 C I C I CM I LM t SC ± V 5ns 4 V T C = C Short circuit withstanding time V GE = 5V, V CE V, Delay between short circuits.s, T C =5 C T C =5 C T C = C P D 3 9 9 A Junction and Storage Temperature Range Maximum lead temperature for soldering T J, T STG -55 to 5 C purpose, /8" from case for 5 seconds Thermal Characteristics T L 3 C Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Symbol R θ JA R θ JC AOKS3BD. Units C/W C/W 8 83 A A µs W Rev..: May 5 www.aosmd.com Page of 7
Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J =5 C - - V V CE(sat) T J =5 C -..5 T J =5 C -.4 - T J =5 C -.5 - V GE(th) Gate-Emitter Threshold Voltage V CE =5V, I C =ma - 5. - V I CES T J =5 C - - T J =5 C - - T J =5 C - - I GES Gate-Emitter leakage current V CE =V, V GE =±V - - ± na g FS C ies C oes C res Q g Q ge Q gc I C(SC) R g t D(on) t r t D(off) t f E on E off E total t D(on) t r t D(off) t f E on E off E total Total Gate Charge Gate to Emitter Charge V GE =5V, V CE =48V, I C =3A Gate to Collector Charge Short circuit collector current, Max. short circuits, Delay between short circuits.s Gate resistance Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Parameter Collector-Emitter Saturation Voltage Zero Gate Voltage Collector Current Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS, (Load Iductive, T J =5 C) Total Switching Energy SWITCHING PARAMETERS, (Load Iductive, T J =5 C) Total Switching Energy Conditions V GE =5V, I C =3A V CE =V, V GE =V V CE =V, I C =3A V GE =V, V CE =5V, f=mhz V GE =5V, V CE =V, R G =5Ω f=mhz T J =5 C V GE =5V, V CE =V, I C =3A, R G =Ω, Parasitic Ιnductance=5nH and include diode (AOK3BD) reverse recovery T J =5 C V GE =5V, V CE =V, I C =3A, R G =Ω, Parasitic Inductance=5nH and include diode (AOK3BD) reverse recovery V µa - 3 - S - 34 - pf - - pf - 5 - pf - 34 - nc - 4.3 - nc -.7 - nc - 9 - A -.3 - Ω - - ns - 44 - ns - 58 - ns - - ns -. - mj -.4 - mj -.34 - mj - - ns - 45 - ns - 7 - ns - 9 - ns -.3 - mj -.4 - mj -.7 - mj THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: May 5 www.aosmd.com Page of 7
8 V GE = 7V V 7V 5V 3V V 3 4 5 7 9V 8 V 7V 5V 3V V V GE =7V 3 4 5 7 9V Figure : Output Characteristic (T j =5 C) Figure : Output Characteristic (T j =5 C) 8 V CE =V - C 5 C 5 C V CE(sat) (V) 5 4 3 I C =A I C =3A I C =5A 4 7 3 V GE (V) Figure 3: Transfer Characteristic 5 5 75 5 5 75 Temperature ( C) Figure 4: Collector-Emitter Saturation Voltage vs. Junction Temperature 8 7 V GE(TH) (V) 5 4 3 3 9 5 T J ( C) Figure 5: V GE(TH) vs. T j Rev..: May 5 www.aosmd.com Page 3 of 7
5 V CE =48V I C =3A C ies V GE (V) 9 3 Capacitance (pf) C oes C res 5 5 5 3 35 Q g (nc) Figure : Gate-Charge Characteristics 5 5 5 3 35 Figure 7: Capacitance Characteristic 5 Power Disspation(W) 5 5 5 5 75 5 5 T CASE ( C) Figure 9: Power Disspation as a Function of Case 5 Current rating 3 5 5 75 5 5 T CASE ( C) Figure : Current De-rating Rev..: May 5 www.aosmd.com Page 4 of 7
Switching Time (ns) Td(off) Tf Td(on) Tr Switching Time (ns),, Td(off) Tf Td(on) Tr 3 5 7 Figure : Switching Time vs. I C (T j =5 C, V GE =5V, V CE =V, R g =Ω) 3 9 R g (Ω) Figure : Switching Time vs. R g (T j =5 C, V GE =5V, V CE =V, I C =3A) Switching Time (ns) Td(off) Tf Td(on) Tr 5 5 T J ( C) Figure 3: Switching Time vs.t j ( V GE =5V, V CE =V, I C =3A, R g =Ω) Rev..: May 5 www.aosmd.com Page 5 of 7
8 3. SwitchIng Energy (mj) 4 Switching Energy (mj).5..5..5 Switching Energy (mj) 3 5 7.5.5.5 Figure 4: Switching Loss vs. I C (T j =5 C, V GE =5V, V CE =V, R g =Ω) Switching Energy (mj)..5..5..5 3 9 R g (Ω) Figure 5: Switching Loss vs. R g (T j =5 C, V GE =5V, V CE =V, I C =3A) 5 5 75 5 5 75 T J ( C) Figure : Switching Loss vs. T j (V GE =5V, V CE =V, I C =3A, R g =Ω). 5 3 35 45 5 Figure 7: Switching Loss vs. V CE (T j =5 C, V GE =5V, I C =3A, R g =Ω) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =. C/W In descending order D=.5,.3,.,.5,.,., single pulse P D T on T Single Pulse. E- E-5.... Pulse Width (s) Figure 8: Normalized Maximum Transient Thermal Impedance for IGBT Rev..: May 5 www.aosmd.com Page of 7
Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev..: May 5 www.aosmd.com Page 7 of 7