Revision: Rev

Optimizing Rejection of LTE Band -13 (777-787 MHz) Jammers and Maintaining Low Noise Figure Using 0201 Components (0402 Inductor) Application Note AN267 Revision: Rev. 1.1 RF and Protection Devices

Edition 2012-04-24 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Application Note AN267 Revision History: Previous Revision: Rev. 1.0, 2011-07-25 Page Subjects (major changes since last revision) 8 Values for Table-2 updated 12 to 21 Marker position changed and corresponding values updated 12 to 16 S-parameter figures and LTE Band-13 2 nd Harmonic measurement result updated Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN267, Rev. 1.1 3 / 24

Table of Content, List of Figures and Tables Table of Content 1 GPS Front-End LNA for High Performance Integrated Solution... 6 2 Introduction... 7 3 Application Circuit... 11 4 Typical Measurement Results... 12 5 Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands... 14 6 Miscellaneous Measured Graphs... 19 7 Evaluation Board... 22 8 Authors... 23 Application Note AN267, Rev. 1.1 4 / 24

Table of Content, List of Figures and Tables List of Figures Figure 1 in TSLP-6-2 Package (0.70mm x 1.1mm x 0.40mm)... 6 Figure 2 package size in comparison with 0402 and 0201 components... 9 Figure 3 Block diagram of the for GNSS band 1559-1615MHz applications... 10 Figure 4 application circuit... 11 Figure 5 Power gain of for COMPASS, Galileo, GPS and GLONASS bands... 14 Figure 6 Narrowband power gain of for COMPASS, Galileo, GPS and GLONASS bands... 14 Figure 7 Input matching of for COMPASS, Galileo, GPS and GLONASS bands... 15 Figure 8 Output matching of for COMPASS, Galileo, GPS and GLONASS bands... 15 Figure 9 Reverse isolation of for COMPASS, Galileo, GPS and GLONASS bands... 16 Figure 10 Noise figure of for COMPASS, Galileo, GPS and GLONASS bands... 16 Figure 11 Input 1 db compression point of at supply voltage of 1.8V for Galileo, GPS and Figure 12 GLONASS bands... 17 Input 1 db compression point of at supply voltage of 2.8V for Galileo, GPS and GLONASS bands... 17 Figure 13 Carrier and intermodulation products of for GPS band at Vcc=1.8V... 18 Figure 14 Carrier and intermodulation products of for GPS band at Vcc=2.8V... 18 Figure 15 Stability factor k of upto 10GHz... 19 Figure 16 Stability factor µ1 of upto 10GHz... 19 Figure 17 Stability factor µ2 of upto 10GHz... 20 Figure 18 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=1.8V... 20 Figure 19 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=2.8V... 21 Figure 20 Populated PCB picture of... 22 Figure 21 PCB layer stack... 22 List of Tables Table 1 with different circuit topologies... 8 Table 2 Comparison of different application circuits at supply voltage of 2.8V... 8 Table 3 Pin Definition... 10 Table 4 Switching Mode... 10 Table 5 Bill-of-Materials... 11 Table 6 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V... 12 Table 7 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V... 13 Application Note AN267, Rev. 1.1 5 / 24

GPS Front-End LNA for High Performance Integrated Solution 1 GPS Front-End LNA for High Performance Integrated Solution 1.1 Features High gain: 15.8 db High out-of-band input 3 rd -order intercept point: +7 dbm High input 1dB compression point: -5 dbm Low noise figure: 0.65 db Low current consumption: 4.8 ma Operating frequency: 1550-1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Ultra small TSLP-6-2 leadless package Package dimensions: 0.70mm x 1.1mm x 0.40mm B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only two external SMD components necessary 2 kv HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package Figure 1 in TSLP-6-2 Package (0.70mm x 1.1mm x 0.40mm) 1.2 Applications - GPS (Global Positioning System) working in the L1 band at 1575.42 MHz - GLONASS (Russian GNSS) working in the L1 band from 1598.06 MHz to 1605.38 MHz - Galileo (European GNSS) working in the E2-L1-E1 band from to 1592 MHz - COMPASS (Chinese Beidou Navigation System) working in E2 band at 1561.10 MHz and E1 band at 1589.74 MHz Application Note AN267, Rev. 1.1 6 / 24

Introduction 2 Introduction The is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS) application. It is based on Infineon Technologies B7HF Silicon-Germanium (SiGe:C) technology, enabling a cost-effective solution in a ultra small TSLP-6-2 package with ultra low noise figure, high gain, high linearity and low current consumption over a wide range of supply voltages from 3.6 V down to 1.5 V. All these features make an excellent choice for GNSS LNA as it improves sensitivity, provide greater immunity against out-of-band jammer signals, reduces filtering requirement and hence the overall cost of the GNSS receiver. The GNSS satellites are at an orbit altitude of more than 20,000 km away from earth s surface and transmit power in the range of +47 dbm. After taking losses (atmospheric, antenna etc.) into account, the received signal strength at the GNSS device input is very low in the range of -130 dbm. The ability of the GNSS device to receive such a low signal strength and provide meaningful information to the end-user depends strongly on the noise figure of the GNSS receive chain. This ability which is called receiver sensitivity can be improved by using a low-noise amplifier with low noise figure and high gain at the input of the receiver chain. The improved sensitivity results in a shorter Time-To-First-Fix (TTFF), which is the time required for a GNSS receiver to acquire satellite signals and navigation data, and calculate a position. Noise figure of the LNA defines the overall noise figure of the GNSS receiver system. This is where excels by providing noise figure as low as 0.65 db and high gain of 15.8 db, thereby improving the receiver sensitivity significantly. The ever growing demand to integrate more and more functionality into one device leads to many challenges when transmitter/receiver has to work simultaneously without degrading the performance of each other. In today s smart-phones a GNSS receiver simultaneously coexists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers transmit high power in the range of +24 dbm which due to insufficient isolation couple to the GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver frequency band. For example, GSM 1712.7 MHz mixes with UMTS 1850 MHz to produce third-order-product exactly at GPS. To quantify the effect, shows Application Note AN267, Rev. 1.1 7 / 24

Introduction out-of-band input IP3 at GPS of +7.5 dbm as a result of frequency mixing between GSM 1712.7 MHz and UMTS 1850 MHz with power levels of -20 dbm and -65 dbm respectively. has a high out-of-band input 3 rd order intercept point (IIP3) of +7.5 dbm, so that it is especially suitable for the GPS function in mobile phones. Another issue which is frequently encountered in Smartphones nowdays, is the 2 nd harmonic of LTE Band-13 operating at 787.76 MHz. The 2 nd harmonic of LTE Band-13 falls exactly into the GPS band. In this application note has been optimized to keep noise figure below 0.85 db and also input referred band-13 2 nd harmonic level of around -119 dbm. Table 1 RFin C1 with different circuit topologies Application Circuit 1 Application Circuit 2 L1 Pon N1 GNDRF, 4 GNDRF, 4 AI, 5 PON, 6 AO, 3 VCC, 2 GND, 1 RFin C1 L3 C3 Pon N1 AI, 5 PON, 6 AO, 3 VCC, 2 GND, 1 Table 2 Comparison of different application circuits at supply voltage of 2.8V Application circuit Component values Noise Figure [db] Band-13 2 nd harmonic* [dbm] Out-of-band Input IP3** [dbm] S21 @ 1575.42 MHz [db] S21 @ 787.76 MHz [db] Circuit 1 C1=2pF, L1=10nH 1.0-56.1 6.7 15.80 2.53 Circuit 2 C1=2.7pF, L3***=6.2nH, C3=6.8pF 0.83-119.7 7.5 15.58-30.8 AN265 C1=1nF, L1=6.2nH 0.74-47.5 9.5 15.76 6.87 AN266 *This level is input-referred. C1=2pF, L3=5.6nH, C3=6.8pF 0.96-124.3 8.1 15.50-32.4 **Test conditions: f 1IN = 1712.7 MHz, P 1IN = -20 dbm, f 2IN = 1850 MHz, P 2IN = -65 dbm ***Only this inductor in above application circuits is 0402 size and rest are of 0201 size. Application Note AN267, Rev. 1.1 8 / 24

Introduction Depending upon requirement, performance can be optimized using various component values or circuit topologies. As can be seen from Table 2, different application circuits are designed to optimize noise figure and band-13 2 nd harmonic. This is achieved by using three external SMDs; two 0201 size capacitors and one 0402 size inductor 1. The L3-C3 notch is used to improve the rejection at 787.76 MHz. The component values C1-L3-C3 are then tuned so as to have optimal noise figure, band-13 2 nd harmonic level, gain and input matching. As the industry inclines toward assembly miniaturization and also surface mount technology matures, there is a desire to have smaller and thinner components. This is especially the case with portable electronics where higher circuit density is desired. has ultra small package with dimensions of 0.70mm x 1.1mm x 0.40mm and it requires only two components at its input, the capacitor at the input has to be used if a DC block is required and the inductor provides input matching.this reduces the application bill of materials and the PCB area thus making it an ideal solution for compact and cost-effective GNSS LNA. The output of the is internally matched to 50 Ω, and a DC blocking capacitor is integrated on-chip, thus no external component is required at the output. Figure 2 package size in comparison with 0402 and 0201 components 1 In this application note 0402 size inductor has been choosen so as to reduce noise figure. The same circuit topology is implemented using all 0201 SMDs in AN266. Application Note AN267, Rev. 1.1 9 / 24

Introduction The device also integrates an on-chip ESD protection which can resist until 2 kv (referenced to Human Body Model). The integrated power on/off feature provides for low power consumption and increased stand-by time for GNSS handsets. Moreover, the low current consumption (4.8 ma) makes the device suitable for portable technology like GNSS receivers and mobiles phones. The Internal circuit diagram of the is presented in Figure 3. Table 3 shows the pin assignment of. Table 4 shows the truth table to turn on/off by applying different voltage to the PON pin. Figure 3 Block diagram of the for GNSS band 1559-1615MHz applications Table 3 Pin Definition Pin Symbol Comment 1 GND General ground 2 VCC DC supply 3 AO LNA output 4 GNDRF LNA RF ground 5 AI LNA input 6 PON Power on control Table 4 Switching Mode Mode Symbol ON/OFF Control Voltage Min Max On PON, on 1.0V VCC Off PON, off 0 V 0.4 V Application Note AN267, Rev. 1.1 10 / 24

Application Circuit 3 Application Circuit 3.1 Schematic Diagram N1 GNDRF, 4 AO, 3 RFout RFin C1 Vcc L3 Pon AI, 5 PON, 6 VCC, 2 GND, 1 C2 (optional) C3 Figure 4 application circuit Table 5 Bill-of-Materials Symbol Value Unit Package Manufacturer Comment C1 2.7 pf 0201 Various DC block/input matching C2 (optional) 10 nf 0201 Various RF bypass L3 6.2 nh 0402 Murata LQW series Input matching C3 6.8 pf 0201 Various Input matching N1 TSLP-6-2 Infineon SiGe:C LNA PCB substrate FR4 Application Note AN267, Rev. 1.1 11 / 24

Typical Measurement Results 4 Typical Measurement Results Table 6 and Table 7 show typical measurement results of the application circuit shown in Figure 4. The values given in this table include losses of the board and the SMA connectors if not otherwise stated. Table 6 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 1.8 V DC Current Icc 4.8 ma Navigation System Frequency Range Sys COMPASS/ Galileo GPS GLONASS Freq 1559-1593 1575.42 1598-1606 MHz Gain G 15.5 15.5 15.5 db Noise Figure NF 0.81 0.83 0.81 db Input Return Loss RLin 9.1 9.4 9.9 db PCB and SMA connectors of 0.1 db losses substracted Output Return Loss Reverse Isolation RLout 13.9 14.8 16.6 db IRev 22.7 22.5 22.3 db Input P1dB IP1dB -11.3-9.6-10.3 dbm Output P1dB OP1dB 3.2 4.9 4.2 dbm LTE band-13 2 nd Harmonic Input IP3 In-band Output IP3 In-band Input IP3 out-of-band H2 input referred -119.6 dbm IIP3-5.0-5.0-3.6 dbm OIP3 10.5 10.5 11.9 dbm IIP3 OOB 7.6 dbm Stability k >1 -- f galileo = f gps = 1575 MHz f GLONASS = 1605 MHz f IN = 787.76 MHz, P IN = -25 dbm f H2 = 1575.52 MHz f 1gal/gps = 1575 MHz f 2gal/gps = 1576MHz f 1GLONASS =1602 MHz f 2GLONASS =1603 MHz Input power= -30dBm f 1 = 1712.7 MHz, P 1IN = -20 dbm f 2 = 1850 MHz, P 2IN = -65 dbm f IIP3 = Unconditionnally Stable from 0 to 10GHz Application Note AN267, Rev. 1.1 12 / 24

Table 7 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 5.0 ma Navigation System Frequency Range Sys COMPASS/ Galileo GPS GLONASS Freq 1559-1593 1575.42 1598-1606 MHz Gain G 15.6 15.6 15.6 db Noise Figure NF 0.83 0.83 0.82 db PCB and SMA connectors of 0.1 db losses substracted Input Return Loss Output Return Loss Reverse Isolation RLin 8.9 9.2 9.6 db RLout 12.8 13.6 15.2 db IRev 23.2 23.1 22.8 db Input P1dB IP1dB -9.3-9.4-8.0 dbm Output P1dB OP1dB 5.3 5.2 6.6 dbm LTE band-13 2 nd Harmonic Input IP3 In-band Output IP3 In-band Input IP3 out-of-band H2 input referred -119.7 dbm IIP3-5.0-5.0-3.6 dbm OIP3 10.6 10.6 12.0 dbm IIP3 OOB 7.5 dbm Stability k >1 -- f galileo = f gps = 1575 MHz f GLONASS = 1605 MHz f IN = 787.76 MHz, P IN = -25 dbm f H2 = 1575.52 MHz f 1gal/gps = 1575 MHz f 2gal/gps = 1576MHz f 1GLONASS =1602 MHz f 2GLONASS =1603 MHz Input power= -30dBm f 1 = 1712.7 MHz, P 1IN = -20 dbm f 2 = 1850 MHz, P 2IN = -65 dbm f IIP3 = Unconditionnally Stable from 0 to 10GHz Application Note AN267, Rev. 1.1 13 / 24

S21 (db) S21 (db) Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands 5 Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands 20 15 10 5 0-5 -10-15 -20-25 -30-35 -40 15.6 db 787.76 MHz -30.5 db Gain Gain at Vcc=1.8V Gain at Vcc=2.8V 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Frequency (MHz) Figure 5 Power gain of for COMPASS, Galileo, GPS and GLONASS bands 16.6 16.4 16.2 16 Narrowband gain Gain at Vcc=1.8V Gain at Vcc=2.8V 15.8 15.6 15.6 db 15.6 db 15.6 db 15.4 15.2 15.5 db 15.5 db 15.5 db 15 14.8 14.6 1500 1525 1550 1575 1600 1625 1650 Frequency (MHz) Figure 6 Narrowband power gain of for COMPASS, Galileo, GPS and GLONASS bands Application Note AN267, Rev. 1.1 14 / 24

S22 (db) S11 (db) Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands 0-3 Input matching S11 at Vcc=1.8V S11 at Vcc=2.8V -6-8.87 db -9.15 db -9.63 db -9-12 -9.09 db -9.38 db -9.86 db -15 1500 1525 1550 1575 1600 1625 1650 Frequency (MHz) Figure 7 Input matching of for COMPASS, Galileo, GPS and GLONASS bands 0 Output matching S22 at Vcc=1.8V S22 at Vcc=2.8V -5-10 -12.8 db -13.6 db -15.2 db -15-20 -13.9 db -14.8 db -16.6 db 1500 1525 1550 1575 1600 1625 1650 Frequency (MHz) Figure 8 Output matching of for COMPASS, Galileo, GPS and GLONASS bands Application Note AN267, Rev. 1.1 15 / 24

NF (db) S12 (db) Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands -15 Isolation S12 at Vcc=1.8V S12 at Vcc=2.8V -18-21 -22.7 db -22.5 db -22.3 db -24-23.2 db -23.1 db -22.8 db -27-30 1500 1525 1550 1575 1600 1625 1650 Frequency (MHz) Figure 9 Reverse isolation of for COMPASS, Galileo, GPS and GLONASS bands 1 Noise figure NF at Vcc=1.8V NF at Vcc=2.8V 0.9 0.83 0.83 0.82 0.8 0.81 0.83 0.81 0.7 0.6 0.5 1559 1567 1575 1583 1591 1599 1607 1615 Frequency (MHz) Figure 10 Noise figure of for COMPASS, Galileo, GPS and GLONASS bands Application Note AN267, Rev. 1.1 16 / 24

Gain (db) Gain (db) Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands 20 18 Compression point at 1dB with Vcc=1.8V P1dB at Vcc=1.8V Galileo (1559MHz) P1dB at Vcc=1.8V GPS (1575MHz) P1dB at Vcc=1.8V GLONASS (1605MHz) 16 14-25 dbm 15.4 db -25 dbm 15.3 db -25 dbm 15.4 db -10.3 dbm 14.4 db -11.3 dbm 14.3 db -9.64 dbm 14.4 db 12 10-25 -20-15 -10-5 0 Power (dbm) Figure 11 Input 1 db compression point of at supply voltage of 1.8V for Galileo, GPS and GLONASS bands 20 18 Compression point at 1dB with Vcc=2.8V P1dB at Vcc=2.8V Galileo (1559MHz) P1dB at Vcc=2.8V GPS (1575MHz) P1dB at Vcc=2.8V GLONASS (1605MHz) 16 14 12-25 dbm 15.52 db -25 dbm 15.38 db -25 dbm 15.42 db -9.39 dbm 14.42 db -8.03 dbm 14.52 db -9.33 dbm 14.38 db 10-25 -20-15 -10-5 0 Power (dbm) Figure 12 Input 1 db compression point of at supply voltage of 2.8V for Galileo, GPS and GLONASS bands Application Note AN267, Rev. 1.1 17 / 24

Power (dbm) Power (dbm) Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands 0 Intermodulation for GPS band -10-20 -30 1575 MHz -14.81 1576 MHz -14.87-40 -50-60 1574 MHz -65.49-70 -80-90 -100 1573 1574 1575 1576 1577 1578 Frequency (MHz) Figure 13 Carrier and intermodulation products of for GPS band at Vcc=1.8V 0 Intermodulation for GPS band -10-20 -30 1575 MHz -14.77 1576 MHz -14.84-40 -50-60 1574 MHz -65.63-70 -80-90 -100 1573 1574 1575 1576 1577 1578 Frequency (MHz) Figure 14 Carrier and intermodulation products of for GPS band at Vcc=2.8V Application Note AN267, Rev. 1.1 18 / 24

Miscellaneous Measured Graphs 6 Miscellaneous Measured Graphs 3 Stability K factor Stability K factor at Vcc=1.8V Stability K factor at Vcc=2.8V 2 1.26 1 1.23 0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Frequency (MHz) Figure 15 Stability factor k of upto 10GHz 3 Stability Mu1 factor Stability Mu1 factor at Vcc=1.8V Stability Mu1 factor at Vcc=2.8V 2 1.79 1 1.74 0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Frequency (MHz) Figure 16 Stability factor µ1 of upto 10GHz Application Note AN267, Rev. 1.1 19 / 24

-1.0 0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 Miscellaneous Measured Graphs 3 Stability Mu2 factor Stability Mu2 factor at Vcc=1.8V Stability Mu2 factor at Vcc=2.8V 2 1.39 1 1.36 0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Frequency (MHz) Figure 17 Stability factor µ2 of upto 10GHz Input Output Input and Output matching with Vcc=1.8V 0.6 0.8 2.0 Swp Max 1615MHz 0.2 0.4 r 1.28 x 0.375 r 1.31 x 0.136 1.0 1.0 r 1.15 x 0.79 r 1.37 x 0.702 3.0 4.0 5.0 10.0-10.0-0.2-5.0-4.0-0.4-3.0-2.0-0.6-0.8 Swp Min 1559MHz Figure 18 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=1.8V Application Note AN267, Rev. 1.1 20 / 24

0-1.0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 Miscellaneous Measured Graphs Input Input and Output matching with Vcc=2.8V Output 0.6 0.8 2.0 Swp Max 1615MHz 0.2 0.4 r 1.29 x 0.45 1.0 1.0 r 1.08 x 0.798 r 1.31 x 0.739 3.0 4.0 5.0 10.0-0.2 r 1.36 x 0.199-10.0-5.0-4.0-0.4-3.0-2.0-0.6-0.8 Swp Min 1559MHz Figure 19 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=2.8V Application Note AN267, Rev. 1.1 21 / 24

Evaluation Board 7 Evaluation Board Figure 20 Populated PCB picture of Vias FR4, 0.2mm Copper 35µm FR4, 0.8mm Figure 21 PCB layer stack Application Note AN267, Rev. 1.1 22 / 24

Authors 8 Authors Jagjit Singh Bal, Senior Application Engineer of Business Unit RF and Protection Devices. Dr. Chih-I Lin, Senior Staff Engineer of Business Unit RF and Protection Devices. Application Note AN267, Rev. 1.1 23 / 24

w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN267