Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage V EBO 12 Collector Current Continuous I C Adc Total Power Dissipation @ T A = 25 C Derate above T A = 25 C Total Power Dissipation @ T A = 25 C Derate above T A = 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D 1.5 12 mw mw/ C W mw/ C T J, T stg 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 0 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 3 COLLECTOR 1 BASE 2 EMITTER 3 TO92 CASE 29 STYLE 17 MARKING DIAGRAM BC 618 AYWW A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping TO92 5000 Units / Bulk *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. G TO92 (PbFree) 5000 Units / Bulk RL1 TO92 00 / Tape & Reel RL1G TO92 (PbFree) 00 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 06 January, 06 Rev. 3 1 Publication Order Number: /D
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V (BR)CEO (I C = madc, V BE = 0) 55 Collector Base Breakdown Voltage (I C = 0 Adc, I E = 0) Emitter Base Breakdown Voltage (I E = Adc, I C = 0) Collector Cutoff Current (V CE = 60, V BE = 0) Collector Cutoff Current (V CB = 60, I E = 0) Emitter Cutoff Current (V EB =, I C = 0) ON CHARACTERISTICS DC Current Gain (I C = 0 ma, I B = ma) Base Emitter Saturation Voltage (I C = 0 ma, I B = ma) DC Current Gain (I C = 0 A, V CE = ) (I C = ma, V CE = ) (I C = 0 ma, V CE = ) (I C = A, V CE = ) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = 500 ma, V CE =, P = 0 MHz) Output Capacitance (V CB = V, I E = 0, f = MHz) Input Capacitance (V EB = V, I E = 0, f = MHz) V (BR)CBO 80 V (BR)EBO 12 I CES 50 I CBO 50 I EBO 50 V CE(sat) 1.1 V BE(sat) 1.6 h FE 00 4000 000 4000 50000 f T 150 C ob 4.5 7.0 C ib 9.0 nadc nadc nadc MHz pf pf R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2
NOISE CHARACTERISTICS (V CE =, T A = 25 C) e n, NOISE VOLTAGE (nv) 500 0 0 50 BANDWIDTH = Hz R S 0 50 0 0 500 1 k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) 0 A I C = ma A i n, NOISE CURRENT (pa) 0.7 0.3 BANDWIDTH = Hz I C = ma 0.07 0.05 0 A A 0.03 0.02 50 0 0 500 1 k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current V T, TOTAL WIDEBAND NOISE VOLTAGE (nv) 0 0 70 50 30 BANDWIDTH = Hz TO 15.7 khz I C = A 0 A ma 50 0 0 500 00 R S, SOURCE RESISTANCE (k ) Figure 4. Total Wideband Noise Voltage NF, NOISE FIGURE (db) 14 BANDWIDTH = Hz TO 15.7 khz 12 A 8.0 0 A 6.0 4.0 I C = ma 0 50 0 0 500 00 R S, SOURCE RESISTANCE (k ) Figure 5. Wideband Noise Figure 3
SMALLSIGNAL CHARACTERISTICS C, CAPACITANCE (pf) 7.0 3.0 C ibo C obo h fe, SMALLSIGNAL CURRENT GAIN 4.0 0.8 0.6 0.4 V CE = V f = 0 MHz 0.04 0.4 4.0 40 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 50 0 0 500 Figure 7. High Frequency Current Gain h FE, DC CURRENT GAIN 0 k 0 k 70 k 50 k 30 k k k 7.0 k k 3.0 k T J = 125 C 25 C 55 C k 7.0 30 50 70 0 0 300 500 Figure 8. DC Current Gain V CE = V V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 3.0 2.5 I C = ma 50 ma 250 ma 500 ma 1.5 50 0 0 500 00 I B, BASE CURRENT ( A) Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) 1.6 1.4 1.2 0.8 0.6 V BE(sat) @ I C /I B = 00 V BE(on) @ V CE = V V CE(sat) @ I C /I B = 00 7.0 30 50 70 0 0 300 500 R θ V, TEMPERATURE COEFFICIENTS (mv/ C) 3.0 4.0 *APPLIES FOR I C /I B h FE /3.0 *R VC FOR V CE(sat) VB FOR V BE 25 C TO 125 C 55 C TO 25 C 25 C TO 125 C 55 C TO 25 C 6.0 7.0 30 50 70 0 0 300 500 Figure. On Voltages Figure 11. Temperature Coefficients 4
RESISTANCE (NORMALIZED) 0.7 0.3 0.07 0.05 0.03 0.02 D = 0.05 SINGLE PULSE SINGLE PULSE Z JC(t) = r(t) R JC МT J(pk) T C = P (pk) Z JC(t) Z JA(t) = r(t) R JA МT J(pk) T A = P (pk) Z JA(t) 0.01 50 0 0 500 k k k k t, TIME (ms) Figure 12. Thermal Response k 700 500 300 0 0 70 50 30 0.4 T A = 25 C T C = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms s 0 s 0.6 4.0 6.0 40 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area t 1 FIGURE A P P t P 1/f DUTY CYCLE t1 f t 1 tp PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data P P 5
PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AL SEATING PLANE R A X X H V 1 N G P N B L K C D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 75 4.45 5. B 70 4.32 5.33 C 25 65 3.18 4.19 D 0.016 0.021 0.407 33 G 0.045 0.055 1.15 1.39 H 0.095 2.42 2.66 J 0.015 0.0 0.39 0 K 00 12.70 L 50 6.35 N 0.080 4 2.66 P 0.0 2.54 R 15 2.93 V 35 3.43 STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 850821312 USA Phone: 48082977 or 8003443860 Toll Free USA/Canada Fax: 4808297709 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 1530051 Phone: 81357733850 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. /D