N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).77 at V GS =. V N-Channel. at V GS =. V.7 at V GS = -. V - P-Channel -. at V GS = -. V -. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power MOSFET Ultra Low N- and P-Channel for High Efficiency Optimized for High-Side/Low-Side Minimized Conduction Losses Compliant to RoHS Directive /9/EC APPLICATIONS Portable Devices Including PDAs, Cellular Phones and Pagers TSOP- T op V i e w D S G D mm S S G G G D. mm Ordering Information: -T-E (Lead (Pb)-free) -T-GE (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = C, unless otherwise noted N-Channel P-Channel Parameter Symbol Unit s Steady State s Steady State Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± ± Continuous Drain Current (T J = C) a T A = C. - -.7 I D T A = 7 C.. -. -. A Pulsed Drain Current I DM - Continuous Source Current (Diode Conduction) a I S..7 -. -.7 T A = C Maximum Power Dissipation a.... P D W T A = 7 C.7..7. Operating Junction and Storage Temperature Range T J, T stg - to C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Typ. Max. Typ. Max. Maximum Junction-to-Ambient a t s 9 9 R thja Steady State Maximum Junction-to-Foot (Drain) Steady State R thjf 7 9 7 9 Notes: a. Surface Mounted on " x " FR board. Unit C/W Document Number: 7 S9-97-Rev. C, -Sep-9
SPECIFICATIONS T J = C, unless otherwise noted Parameter Symbol Test Condition Min. Typ. Max. Unit Static V DS = V GS, I D = µa N-Ch.. Gate Threshold Voltage V GS(th) V DS = V GS, I D = - µa P-Ch -. -. Gate-Body Leakage I GSS V DS = V, V GS = ± V Zero Gate Voltage Drain Current On-State Drain Current a I DSS I D(on) N-Ch ± P-Ch ± V DS = V, V GS = V N-Ch V DS = - V, V GS = V P-Ch - V DS = V, V GS = V, T J = C N-Ch V DS = - V, V GS = V, T J = C P-Ch - V DS V, V GS =. V N-Ch V DS - V, V GS = -. V P-Ch - V GS =. V, I D = A N-Ch..77 V Drain-Source On-State Resistance a GS = -. V, I D = - A P-Ch..7 V GS =. V, I D = A N-Ch.9. V GS = -. V, I D = -. A P-Ch.. V Forward Transconductance a DS = V, I D = A N-Ch g fs V DS = - V, I D = - A P-Ch I Diode Forward Voltage a S =. A, V GS = V N-Ch.. V SD I S = -. A, V GS = V P-Ch -. -. Dynamic b N-Ch. Total Gate Charge Q g N-Channel P-Ch. V DS = V, V GS =. V, I D = A N-Ch. Gate-Source Charge Q gs P-Ch. P-Channel V DS = - V, V GS = -. V, I D = - A N-Ch. Gate-Drain Charge Q gd P-Ch. N-Ch Turn-On Delay Time t d(on) N-Channel P-Ch V DD = V, R L = Ω N-Ch Rise Time t r I D A, V GEN = V, R g = Ω P-Ch N-Ch Turn-Off Delay Time t d(off) P-Channel V DD = - V, R L = Ω P-Ch I D - A, V GEN = - V, R g = Ω N-Ch 7 Fall Time t f P-Ch I F =. A, di/dt = A/µs N-Ch Source-Drain Reverse Recovery Time t rr I F = -. A, di/dt = A/µs P-Ch Notes: a. Pulse test; pulse width µs, duty cycle %. b. Guaranteed by design, not subject to production testing. V na µa A Ω S V nc ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 7 S9-97-Rev. C, -Sep-9
N-CHANNEL TYPICAL CHARACTERISTICS C unless noted 7 V GS = V thru. V 7 - Drain Current (A) ID V I D - Drain Current (A) T C = C. V V DS - Drain-to-Source Voltage (V) Output Characteristics. C - C....... V GS - Gate-to-Source Voltage (V) Transfer Characteristics - On-Resistance (Ω).... V GS =. V C - Capacitance (pf) 7 9 C oss C iss V GS =. V. I D - Drain Current (A) On-Resistance vs. Drain Current. C rss V DS - Drain-to-Source Voltage (V) Capacitance - Gate-to-Source Voltage (V) V DS = V I D = A (Normalized) - On-Resistance.... V GS =. V I D = A V GS. Q g - T otal Gate Charge (nc) Gate Charge. - - 7 T J - Junction T emperature ( C) On-Resistance vs. Junction Temperature Document Number: 7 S9-97-Rev. C, -Sep-9
N-CHANNEL TYPICAL CHARACTERISTICS C unless noted. I S - Source Current (A) T J = C T J = C - On-Resistance (Ω).... I D = A.....9... V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.. I D = µa V ariance (V) V GS(th). -. -. Power (W) -. - - 7 T J - T emperature ( C) Threshold Voltage.. Time (s) Single Pulse Power, Junction-to-Ambient - Drain Current (A) I D.. Limited by * I D( on) Limited T C = C Single Pulse I DM Limited BV DS S Limited µs ms ms ms s, s DC. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which is specified Safe Operating Area, Junction-to-Case Document Number: 7 S9-97-Rev. C, -Sep-9
N-CHANNEL TYPICAL CHARACTERISTICS C unless noted Normalized Ef fective T ransient Thermal Impedance t Duty Cycle =... Notes: P DM... t t. Duty Cycle, D = t. Per Unit Base = R th J A = 7 C/W. T JM - T A = P DM Z (t) th J A. Surface Mounted Single Pulse. - - - - Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =...... - Single Pulse - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - Document Number: 7 S9-97-Rev. C, -Sep-9
P-CHANNEL TYPICAL CHARACTERISTICS C unless noted I D - Drain Current (A) 7 V GS = V thru. V V. V I D - Drain Current (A) 7 T C = - C C C V. V V DS - Drain-to-Source Voltage (V) Output Characteristics........ V GS - Gate-to-Source Voltage (V) Transfer Characteristics.7. - On-Resistance (Ω)... V GS =. V V GS =. V C - Capacitance (pf) C oss C iss. 7 I D - Drain Current (A) On-Resistance vs. Drain Current C rss V DS - Drain-to-Source Voltage (V) Capacitance. - Gate-to-Source Voltage (V) V DS = V I D = A (Normalized) - On-Resistance.... V GS =. V I D = A V GS. Q g - Total Gate Charge (nc) Gate Charge. - - 7 T J - Junction T emperature ( C) On-Resistance vs. Junction Temperature Document Number: 7 S9-97-Rev. C, -Sep-9
P-CHANNEL TYPICAL CHARACTERISTICS C unless noted.. - Source Current (A) T J = C T J = C - On-Resistance (Ω).. I D = A IS......9.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 7 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.. I D = µa V ariance (V) V GS(th)... Power (W) -. -. - - 7 T J - T emperature ( C) Threshold Voltage.. Time (s) Single Pulse Power, Junction-to-Ambient I DM Limited - Drain Current (A) I D.. Limited by * I D( on) Limited T C = C Single Pulse BV DS S Limited µs ms ms ms s, s DC. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which is specified Safe Operating Area, Junction-to-Case Document Number: 7 S9-97-Rev. C, -Sep-9 7
P-CHANNEL TYPICAL CHARACTERISTICS C unless noted Normalized Ef fective T ransient Thermal Impedance t Duty Cycle =... Notes: P DM... t t. Duty Cycle, D = t. Per Unit Base = R th J A = 7 C/W. T JM - T A = P DM Z (t) th J A. Surface Mounted Single Pulse. - - - - Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =...... - Single Pulse - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7. Document Number: 7 S9-97-Rev. C, -Sep-9
Package Information TSOP: / LEAD JEDEC Part Number: MO-9C e e E E E E -B- -B- e b. M C B A e b. M C B A -LEAD TSOP -LEAD TSOP D -A- R x.7 Ref c A A R L Gauge Plane. C -C- A Seating Plane x (L ) L Seating Plane MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A.9 -.. -. A. -.. -. A.9 -....9 b...... c...... D.9..... E.7..9...7 E...7...7 e.9 BSC.7 BSC e..9..7.7.79 L. -.. -. L. Ref. Ref L. BSC. BSC R. - -. - - 7 Nom 7 Nom ECN: C-9-Rev. I, -Dec- DWG: Document Number: 7 -Dec-
AN Mounting LITTLE FOOT TSOP- Power MOSFETs Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages. The basis of the pad design for surface mounted power MOSFET is the basic footprint for the package. For the TSOP- package outline drawing see http:///doc?7 and see http:///doc?7 for the minimum pad footprint. In converting the footprint to the pad set for a power MOSFET, you must remember that not only do you want to make electrical connection to the package, but you must made thermal connection and provide a means to draw heat from the package, and move it away from the package. In the case of the TSOP- package, the electrical connections are very simple. Pins,,, and are the drain of the MOSFET and are connected together. For a small signal device or integrated circuit, typical connections would be made with traces that are. inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. Since surface mounted packages are small, and reflow soldering is the most common form of soldering for surface mount components, thermal connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least. inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. REFLOW SOLDERING surface-mount packages meet solder reflow reliability requirements. Devices are subjected to solder reflow as a test preconditioning and are then reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow temperature profile used, and the temperatures and time duration, are shown in Figures and. Figure shows the copper spreading recommended footprint for the TSOP- package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlays the basic pattern on pins,,, and. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. Notice that the planar copper is shaped like a T to move heat away from the drain leads in all directions. This pattern uses all the available area underneath the body for this purpose..7....7.7.. Ramp-Up Rate Temperature @ C Temperature Above C + C/Second Maximum Seconds Maximum 7 Seconds.. Maximum Temperature Time at Maximum Temperature +/ C Seconds.9..9... Ramp-Down Rate + C/Second Maximum FIGURE. Recommended Copper Spreading Footprint FIGURE. Solder Reflow Temperature Profile Document Number: 77 7-Feb-
AN C s (max) C/s (max) - C/s (max) 7 C 7 C C/s (max) - s (min) Pre-Heating Zone s (max) Reflow Zone Maximum peak temperature at C is allowed. FIGURE. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device s thermal performance is the junction-to-case thermal resistance, R jc, or the junction-to-foot thermal resistance, R jf. This parameter is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device only, in other words, independent of the properties of the object to which the device is mounted. Table shows the thermal performance of the TSOP-. TABLE. Equivalent Steady State Performance TSOP- Thermal Resistance R jf C/W r DS(on) On-Resiistance (Normalized)..... On-Resistance vs. Junction Temperature V GS =. V I D =. A SYSTEM AND ELECTRICAL IMPACT OF TSOP- In any design, one must take into account the change in MOSFET r DS(on) with temperature (Figure ).. 7 T J Junction Temperature ( C) FIGURE. SiDV Document Number: 77 7-Feb-
Application Note RECOMMENDED MINIMUM PADS FOR TSOP-.99 (.) APPLICATION NOTE. (.99).9 (.). (.).9 (.). (.).9 (.9) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: 7 Revision: -Jan-
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