STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET

Similar documents
-55 to 175 C T j ( ) Pulse width limited by safe operating area.

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET

STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP

STD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET

STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET

STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET

STF12PF06 P-CHANNEL 60V Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET

STD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET

STP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET

STP36NF06 STP36NF06FP

STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET

IRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

STS7NF60L N-CHANNEL 60V Ω - 7.5A SO-8 STripFET II POWER MOSFET

Obsolete Product(s) - Obsolete Product(s)

STS5PF30L P-CHANNEL 30V Ω - 5A SO-8 STRIPFET POWER MOSFET

STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

IRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET

STD30NF03L STD30NF03L-1

Obsolete Product(s) - Obsolete Product(s)

STY60NM50 N-CHANNEL 500V Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET

Obsolete Product(s) - Obsolete Product(s)

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

STB30NF10 STP30NF10 - STP30NF10FP

STW9NC80Z N-CHANNEL 800V Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

STB160N75F3 STP160N75F3 - STW160N75F3

STW20NB50. N - CHANNEL 500V Ω - 20A - TO-247 PowerMESH MOSFET

50 A 27 A ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit

STB160N75F3 STP160N75F3 - STW160N75F3

STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1

STW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET

STB80NF55-08T4 STP80NF55-08, STW80NF55-08

STP36NF06L STB36NF06L

STP36NF06 STP36NF06FP

STW8NC90Z N-CHANNEL 900V Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET

STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V Ω - 4.4A TO-220/FP-D/IPAK-D 2 /I 2 PAK Zener-Protected SuperMESH MOSFET

2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram

STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω A TO-220/TO-220FP PowerMesh MOSFET

STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description

STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description

IRFP460. N - CHANNEL 500V Ω - 20 A - TO-247 PowerMESH MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram

Obsolete Product(s) - Obsolete Product(s)

IRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET

STW26NM60 N-CHANNEL 600V Ω - 30A TO-247 MDmesh MOSFET

115 W 115 W 35 W 115 W 35 W 156 W TO-220 SALES TYPE MARKING PACKAGE PACKAGING STP10NK60Z P10NK60Z TO-220 TUBE STP10NK60ZFP P10NK60ZFP TO-220FP TUBE

STP12NK30Z N-CHANNEL 300V Ω -9A-TO-220 Zener-Protected SuperMESH Power MOSFET

115 W 35 W 115 W 115 W 156 W SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE

STW9NB80. N-CHANNEL 800V Ω - 9.3A - TO-247 PowerMESH MOSFET

STF8NK100Z STP8NK100Z

STF40NF03L STP40NF03L

N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET 4 A 4 A. Symbol Parameter Value Unit

Obsolete Product(s) - Obsolete Product(s)

STE70NM60 N-CHANNEL 600V Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET

STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description

STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V Ω - 7.2A TO-220/FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH MOSFET

STY60NK30Z N-CHANNEL 300V Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET

STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I 2 PAK/D 2 PAK Zener-Protected SuperMESH Power MOSFET

STP5NK80Z - STP5NK80ZFP N-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET

STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description

STP60NF06 STP60NF06FP

9.5 A 6.4 A. Symbol Parameter Value Unit

STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description

IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

STD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description

Obsolete Product(s) - Obsolete Product(s)

STD2NC45-1 STQ1NC45R-AP

Obsolete Product(s) - Obsolete Product(s)

STS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description

Obsolete Product(s) - Obsolete Product(s)

I D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel

STB270N4F3 STI270N4F3

N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging

Obsolete Product(s) - Obsolete Product(s)

STP60NE06L-16 STP60NE06L-16FP

Obsolete Product(s) - Obsolete Product(s)

STP10NK70ZFP STP10NK70Z

STP90NF03L STB90NF03L-1

STP12NK60Z STF12NK60Z

STB11NK50Z - STP11NK50ZFP STP11NK50Z

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

N-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube

STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z

STN4NF06L. N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET II Power MOSFET. Features. Applications. Description

STW11NK100Z STW11NK100Z

N-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging

Transcription:

N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4") IPAK TO-251 (Suffix -1 ) 3 2 1 1 DPAK TO-252 (Suffix T4 ) 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size " stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 60 V V DGR Drain-gate Voltage (R GS = 20 kω) 60 V V GS Gate- source Voltage ± 16 V I D Drain Current (continuous) at T C = 25 C 12 A I D Drain Current (continuous) at T C = 100 C 8.5 A I DM ( ) Drain Current (pulsed) 48 A P tot Total Dissipation at T C = 25 C 30 W Derating Factor 0.2 W/ C dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns E AS (2) Single Pulse Avalanche Energy 100 mj T stg Storage Temperature T j Operating Junction Temperature -55 to 175 C ( ) Pulse width limited by safe operating area. (1) I SD 12A, di/dt 200A/µs, V DD =40V, T j T JMAX (2) Starting T j = 25 o C, I AR = 6A, V DD= 30V June 2003. 1/10

THERMAL DATA Rthj-case Rthj-amb T l Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 5 100 275 C/W C/W C ELECTRICAL CHARACTERISTICS (T case = 25 C unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D = 250 µa, V GS = 0 60 V I DSS Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating V DS = Max Rating T C = 100 C 1 10 µa µa I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 16 V ±100 na ON (*) V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µa 1 2 V R DS(on) Static Drain-source On Resistance V GS = 10 V I D = 6 A V GS = 5 V I D = 6 A 0.08 0.10 0.10 0.12 Ω Ω DYNAMIC g fs (*) Forward Transconductance 7 S V DS =25 V I D =6 A C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, V GS = 0 350 75 30 pf pf pf 2/10

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Delay Time Rise Time V DD = 30 V I D = 6 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3) 10 35 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V I D = 12 A V GS = 5V 7.5 2.5 3.0 10 nc nc nc SWITCHING OFF t d(off) t f Turn-off Delay Time Fall Time V DD = 30 V I D = 6 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3) 20 13 ns ns SOURCE DRAIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) 12 48 A A V SD (*) Forward On Voltage I SD = 12 A V GS = 0 1.5 V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A di/dt = 100A/µs V DD = 16 V T j = 150 C (see test circuit, Figure 5) 50 67 2.5 ns nc A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( )Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10

Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics... 5/10

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10

TO-251 (IPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 H A1 C2 A3 A C L2 D L E B2 1 2 3 G B3 B6 B B5 L1 0068771-E 7/10

TO-252 (DPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 0.031 L4 0.6 1 0.023 0.039 H C2 L2 D E B2 1 2 3 G B A DETAIL "A" C A1 A2 DETAIL "A" L4 0068772-B 8/10

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix T4 )* REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 BASE QTY BULK QTY 1000 1000 *on sales type 9/10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10