High Performance 500 ma LDO in Thin and Extra Thin DFN Packages Features General Description Applications Package Types
Typical Application Circuit Functional Block Diagram
1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Operating Ratings Notice: Notice: Note 1: 2: TABLE 1-1: Electrical Characteristics: ELECTRICAL CHARACTERISTICS bold Parameter Symbol Min. Typ. Max. Units Conditions 3.0 +3.0 0.3 180 500 55 65 525 Enable Input 1.2 0.2
TABLE 1-1: Electrical Characteristics: ELECTRICAL CHARACTERISTICS (CONTINUED) bold Parameter Symbol Min. Typ. Max. Units Conditions Note 1: 2: 125 3: 4:
TEMPERATURE SPECIFICATIONS (Note 1) Temperature Ranges Parameters Sym. Min. Typ. Max. Units Conditions Package Thermal Resistances Note 1:
2.0 TYPICAL PERFORMANCE CURVES Note: FIGURE 2-1: Ratio. Power Supply Rejection FIGURE 2-4: Voltage. Ground Current vs. Supply FIGURE 2-2: Current. Dropout Voltage vs. Output FIGURE 2-5: Current. Ground Current vs. Load FIGURE 2-3: Temperature. Dropout Voltage vs. FIGURE 2-6: Temperature. Ground Current vs.
FIGURE 2-7: Current. Output Voltage vs. Output FIGURE 2-10: Voltage. Current Limit vs. Supply FIGURE 2-8: Voltage. Output Voltage vs. Supply FIGURE 2-11: Output Noise Spectral Density (-3.3YMT). FIGURE 2-9: Temperature. Output Voltage vs. FIGURE 2-12: Enable Turn-On.
FIGURE 2-13: Auto-Discharge (No Load). FIGURE 2-16: Ratio. Power Supply Rejection FIGURE 2-14: Line Transient. FIGURE 2-17: Voltage. Ground Current vs. Input FIGURE 2-15: Load Transient. FIGURE 2-18: Current. Ground Current vs. Output
FIGURE 2-19: Current. Output Voltage vs. Output FIGURE 2-22: Density. Output Noise Spectral V IN (DC Coupled, 2V/Div) 5.0V FIGURE 2-20: Voltage. Output Voltage vs. Input V IN 0.0V 1.1V V OUT = 1.1V V IN = 0V to 5.0V V OUT 0.0V I OUT = 100 µa V OUT (DC Coupled, 500 mv/div) Time = 10 µs/div FIGURE 2-23: Start-Up from V IN. 2.5V V EN (DC Coupled, 1V/Div) V EN 0.0V 1.1V FIGURE 2-21: Voltage. Current Limit vs. Input V OUT = 1.1V 0.0V V IN = 2.5V V OUT I OUT = 100 µa V OUT (DC Coupled, 500 mv/div) Time = 10 µs/div FIGURE 2-24: Start-Up from ENABLE.
2.5V V OUT = 1.1V V IN = 2.5V 500 ma V OUT = 1.1V I OUT = 0 V EN 1.1V 0.0V V EN (DC Coupled, 1V/Div) 100 µa I OUT I OUT (DC Coupled, 200 ma/div) V OUT V OUT V OUT (DC Coupled, 500 mv/div) Time = 40 µs/div V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div FIGURE 2-25: Auto-Discharge (No Load). FIGURE 2-28: Load Transient. 3.5V V OUT = 1.1V 500 ma V OUT = 1.1V 2.5V V IN (DC Coupled, 1V/Div) I OUT 1 ma V IN I OUT (DC Coupled, 200 ma/div) V OUT V OUT V OUT (AC Coupled, 10 mv/div) Time = 40 µs/div V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div FIGURE 2-26: Line Transient. FIGURE 2-29: Load Transient. V OUT = 1.1V V OUT = 1.1V 5.5V V IN 2.5V V IN (DC Coupled, 2V/Div) 150 ma 100 µa I OUT I OUT (DC Coupled, 200 ma/div) V OUT V OUT V OUT (AC Coupled, 50 mv/div) V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div Time = 40 µs/div FIGURE 2-27: Line Transient. FIGURE 2-30: Load Transient.
V OUT = 1.1V 150 ma I 1 ma OUT I OUT (DC Coupled, 200 ma/div) V OUT V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div FIGURE 2-31: Load Transient.
3.0 PIN DESCRIPTIONS TABLE 3-1: PIN FUNCTION TABLE Pin Number Pin Name Description
4.0 APPLICATION INFORMATION 4.4 Enable/Shutdown 4.1 Input Capacitor 4.5 Thermal Considerations 4.2 Output Capacitor EQUATION 4-1: P D = V IN V OUT I OUT + V IN I GND EQUATION 4-2: P D = 3.6V 3.3V 500mA = 0.150W 4.3 No-Load Stability
EQUATION 4-3: T JMAX T A P DMAX = ------------------------------- JA EQUATION 4-4: 0.15W = 125 C T A 173 C/W T A = 99 C
5.0 PACKAGING INFORMATION 5.1 Package Marking Information Legend: * Note
6-Lead Thin DFN 1.2 mm x 1.2 mm Package Outline and Recommended Land Pattern
6-Lead Extra Thin DFN 1.2 mm x 1.2 mm Package Outline and Recommended Land Pattern
NOTES:
APPENDIX A: REVISION HISTORY Revision A (March 2018)
NOTES:
PRODUCT IDENTIFICATION SYSTEM Device -X.X X XX -XX Examples: Device: Output Voltage: Junction Temperature Range: Package: Media Type: Note: Note 1:
NOTES:
Note the following details of the code protection feature on Microchip devices: Trademarks. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company s quality system processes and procedures are for its PIC MCUs and dspic DSCs, KEELOQ code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
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SYST-29SMQU307 - Data Sheet - - High-Performance 500mA LDO in Thin and Extra Thin DFN P Affected Catalog Part Numbers(CPN) -2.8YMX-T5-2.8YMX-TR -3.3YMT-T5-3.3YMT-TR -3.3YMX-T5-3.3YMX-TR
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