N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available TrenchFET Power MOSFETS:.5 V Rated Pb-free Available RoHS* COMPLIANT D S TSSOP-8 D S S G 3 4 8 7 5 D S S G G G Top View Ordering Information: -T -T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS - V Gate-Source Voltage ± ± Continuous Drain Current (T J = 5 C) a T A = 5 C ± 4.5 ± 3.5 T A = 7 C ± 3. ±.7 A Pulsed Drain Current M ± ± Continuous Source Current (Diode Conduction) a I S.5 -.5 T A = 5 C Maximum Power Dissipation a. P D W T A = 7 C.4 Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unit Maximum Junction-to-Ambient a R thja 5 C/W a. Surface Mounted on FR4 board, t s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 77 S-85-Rev. C, -May-8
SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V DS =, = 5 µa N-Ch. Gate Threshold Voltage (th) V DS =, = - 5 µa P-Ch -. Gate-Body Leakage I GSS V DS = V, = ± V Zero Gate Voltage Drain Current On-State Drain Current a SS (on) a. Pulse test; pulse width µs, duty cycle %. b. Guaranteed by design, not subject to production testing. N-Ch ± P-Ch ± V DS = V, = V N-Ch V DS = - V, = V P-Ch - V DS = V, = V, T J = 55 C N-Ch 5 V DS = - V, = V, T J = 55 C P-Ch - 5 V DS 5 V, = 4.5 V N-Ch V DS - 5 V, = - 4.5 V P-Ch - = 4.5 V, = 4.5 A N-Ch.3. = - 4.5 V, = - 3.5 A Drain-Source On-State Resistance a P-Ch.4.5 =.5 V, = 3.9 A N-Ch..4 = -.5 V, = -.7 A P-Ch..85 V DS = V, = 4.5 A Forward Transconductance a N-Ch g fs V DS = - V, = - 3.5 A P-Ch I S =.5 A, = V Diode Forward Voltage a N-Ch.5. V SD I S = -.5 A, = V P-Ch.7 -. Dynamic b N-Ch 3 5 Total Gate Charge Q g N-Channel P-Ch 4.5 5 V DS = 5 V, = 4.5 V, = 4.5 A N-Ch 3. Gate-Source Charge Q gs P-Channel P-Ch 3.5 V DS = - 5 V, = - 4.5 V, = - 3.5 A N-Ch 3.3 Gate-Drain Charge Q gd P-Ch 3.5 N-Ch 5 Turn-On Delay Time t d(on) N-Channel P-Ch 7 5 V DD = V, R L = Ω N-Ch 4 8 Rise Time t r A, V GEN = V, R G = Ω P-Ch Turn-Off Delay Time Fall Time t d(off) t f P-Channel V DD = - V, R L = Ω N-Ch P-Ch 5 57 - A, V GEN = - V, R G = Ω N-Ch 4 P-Ch 4 I F =.5 A, di/dt = A/µs N-Ch Source-Drain Reverse Recovery Time t rr I F = -.5 A, di/dt = A/µs P-Ch Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. V na µa A Ω S V nc ns Document Number: 77 S-85-Rev. C, -May-8
N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 4 = 5 thru 3 V.5 V 4 8 V 8 T C = 5 C.5 V 5 C - 55 C 4 8.5..5..5 3. V DS - Drain-to-Source Voltage (V) Output Characteristics - Gate-to-Source Voltage (V) Transfer Characteristics.8 8..4. =.5 V = 4.5 V C - Capacitance (pf) 5 9 C oss C iss 8 4 On-Resistance vs. Drain Current C rss 4 8 V DS - Drain-to-Source V oltage (V) Capacitance 4.5.8 - Gate-to-Source Voltage (V) 3..7.8.9 V DS = V = 4.5 A - On-Resistance (Normalized)..4...8. = 4.5 V = 4.5 A 3 9 5 Q g - Total Gate Charge (nc) Gate Charge.4-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 77 S-85-Rev. C, -May-8 3
N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted. - Source Current (A) I S T J = 5 C T J = 5 C.8..4. = 4.5 A.4..4..8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 4 8 - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 4. = 5 µa 3 Variance (V) (th). -. Power (W) 4 -.4 8 -. - 5-5 5 5 75 5 5.. T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.. P DM..5 t t t. Duty Cycle, D = t. Per Unit Base = R thja = 5 C/W. 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted. - 4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 Document Number: 77 S-85-Rev. C, -May-8
P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 3 V 4 = 5, 4.5, 4, 3,5 V 8.5 V V.5 V 8 4 T C = 5 C 5 C - 55 C 4 8.5..5..5 3. V DS - Drain-to-Source Voltage (V) Output Characteristics - Gate-to-Source Voltage (V) Transfer Characteristics. 5...8.4 =.5 V = 4.5 V C - Capacitance (pf) 5 5 C iss C oss 8 4 On-Resistance vs. Drain Current 4.5 C rss 4 8 V DS - Drain-to-Source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) 3..7.8.9 V DS = V = 3.5 A - On-Resistance (Normalized)..4...8. = 4.5 V = 3.5 A 3 9 5 Q g - Total Gate Charge (nc) Gate Charge.4-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 77 S-85-Rev. C, -May-8 5
P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted. - Source Current (A) I S T J = 5 C T J = 5 C...8.4 = 4.5 A..5.5.75..8 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.5.5 4 8 - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 4. = 5 µa.4 Variance (V) (th).. -. Power (W) -.4 -. - 5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage.. Time (s) Single Pulse Power Normalized Effective Transient Thermal Impedance Duty Cycle =.5.. P DM..5 t t t. Duty Cycle, D = t.. Per Unit Base = R thja = 5 C/W 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted. - 4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?77. Document Number: 77 S-85-Rev. C, -May-8
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