Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V - 8 25.5 FEATURES TrenchFET Power MOSFET % UIS Tested APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter RoHS COMPLIANT TO-252-L D-PAK D D Top View Drain Connected to Tab G G 2 S G S 2 G 2 Ordering Information: -T-E (Lead (Pb)-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 2 T C = 25 C 8 a - 8 a T C = 7 C Continuous Drain Current (T J = 5 C) I 8 a - 8 a D T A = 25 C 8 a, b, c - 8a, b, c T A = 7 C 7 b, c - 7. b, c Pulsed Drain Current ( µs Pulse Width) I DM - A T C = 25 C Source-Drain Current Diode Current I 8 a - 8 a S T A = 25 C. b, c -. b, c Pulsed Source-Drain Current I SM - Avalanche Current I AS 7 5 L =. mh Avalanche Energy E AS 2.5.25 mj T C = 25 C.8 2 T C = 7 C.9 5. Maximum Power Dissipation P D W T A = 25 C 5.2 b, c 5. b, c T A = 7 C. b, c. b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C S S 2 THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambient b, d t s R thja 2 2 8 22 Notes: a. Package Limited. b. Surface Mounted on " x " FR Board. c. t = s. d. Maximum under Steady State conditions is C/W (N-Channel) and 52 C/W (P-Channel). N-Channel P-Channel Maximum Junction-to-Case (Drain) Steady State R thjc 9..5. 5.2 Unit C/W
SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static V GS = V, I D = 25 µa N-Ch Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 µa P-Ch - I D = 25 µa N-Ch V DS Temperature Coefficient ΔV DS /T J I D = - 25 µa P-Ch - I D = 25 µa N-Ch - 5.5 V GS(th) Temperature Coefficient ΔV GS(th) /T J I D = - 25 µa P-Ch. V DS = V GS, I D = 25 µa N-Ch. 2.5 Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 25 µa P-Ch -. - 2.7 N-Ch Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V P-Ch - V DS = V, V GS = V N-Ch V DS = - V, V GS = V P-Ch - Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = 55 C N-Ch V DS = - V, V GS = V, T J = 55 C P-Ch - V DS = 5 V, V GS = V On-State Drain Current b N-Ch I D(on) V DS = - 5 V, V GS = - V P-Ch - V GS = V, I D = 5 A N-Ch.5.7 V GS = - V, I D = - 5 A Drain-Source On-State Resistance b P-Ch.. r DS(on) V GS =.5 V, I D = A N-Ch.7. V GS = -.5 V, I D = - A P-Ch..5 V DS = 5 V, I D = 5 A Forward Transconductance b N-Ch 22 g fs V DS = - 5 V, I D = - 5 A P-Ch 2 Dynamic a N-Ch Input Capacitance C iss N-Channel P-Ch 555 V DS = 2 V, V GS = V, f = MHz N-Ch 7 Output Capacitance C oss P-Ch 7 P-Channel Reverse Transfer Capacitance C V DS = - 2 V, V GS = V, f = MHz N-Ch rss P-Ch 2 V DS = 2 V, V GS = V, I D = 5 A N-Ch.7 2 V Total Gate Charge Q DS = - 2 V, V GS = - V, I D = - 5 A P-Ch 8.5 g N-Ch 5. 9. N-Channel P-Ch 7 27 V DS = 2 V, V GS =.5 V, I D = 5 A N-Ch.9 Gate-Source Charge Q gs P-Ch.2 P-Channel V DS = - 2 V, V GS = -.5 V, I D = - 5 A N-Ch.7 Gate-Drain Charge Q gd P-Ch 7. Gate Resistance R g f = MHz N-Ch 2.2 P-Ch. V mv/ C V na µa A Ω S pf nc Ω 2
SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Dynamic a N-Ch 9 8 Turn-On Delay Time t d(on) N-Channel P-Ch 2 V DD = 2 V, R L = Ω N-Ch 2 Rise Time t r I D 5 A, V GEN = V, R g = Ω P-Ch 25 Turn-Off Delay Time t d(off) P-Channel V DD = - 2 V, R L = Ω N-Ch P-Ch 25 Fall Time t f I D - 5 A, V GEN = - V, R g = Ω N-Ch 8 P-Ch 2 N-Ch 8 Turn-On Delay Time t d(on) N-Channel P-Ch 7 8 V DD = 2 V, R L = Ω N-Ch 25 Rise Time t r I D 5 A, V GEN =.5 V, R g = Ω P-Ch Turn-Off Delay Time t d(off) P-Channel V DD = - 2 V, R L = Ω N-Ch P-Ch 5 25 Fall Time t f I D - 5 A, V GEN = -.5 V, R g = Ω N-Ch 2 P-Ch 25 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 C N-Ch 8 P-Ch - 8 Pulse Diode Forward Current a N-Ch I SM P-Ch - I S = 2 A N-Ch.85.2 Body Diode Voltage V SD I S = - 2 A P-Ch -.7 -.2 N-Ch 9 Body Diode Reverse Recovery Time t rr P-Ch 22 N-Channel N-Ch 25 Body Diode Reverse Recovery Charge Q rr I F = 2 A, di/dt = A/µs, T J = 25 C P-Ch 22 N-Ch Reverse Recovery Fall Time t a P-Channel I F = - 2 A, di/dt = - A/µs, T J = 25 C P-Ch 5 N-Ch Reverse Recovery Rise Time t b P-Ch 7 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width µs, duty cycle 2 %. ns A V ns nc ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 V GS =thru 5 V V 5 8 2 2 T C = 25 C V..5..5 2. 2.5 Output Characteristics T C = 25 C T C = - 55 C 2 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics. 8 C iss - On-Resistance (Ω) r DS(on).52...28 V GS =.5V V GS =V C - Capacitance (pf) 8 2 C oss.2 2 8 2 On-Resistance vs. Drain Current C rss 2 8 2 Capacitance.8 - Gate-to-Source Voltage (V) 8 I D =5A V DS =2V V DS =V V DS =V - On-Resistance r DS(on) (Normalized)...2. I D =5A V GS =V V GS =.5V V GS 2.8. 2.5 5. 7.5. 2.5 Q g - Total Gate Charge (nc) Gate Charge. - 5-25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted.2 I S - Source Current (A).. T J = 5 C T J = 25 C - On-Resistance (Ω) r DS(on)..2.8. I D =5A T A = 25 C...2...8..2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. T A = 25 C 2 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.2 I D = 25 µa 8 Variance (V) V GS(th). -.2 -. I D =5mA -. 2 -.8-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage.... Time (s) Power, Junction-to-Ambient 8 Limited byr DS(on) * - Drain Current (A) µs ms ms ms 2... Time (s). Power, Junction-to-Case I D... T A = 25 C. * V GS > minimum V GS at which r DS(on) is specified Safe Operating Area, Junction-to-Ambient s DC 5
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 7 Limited byr DS(on) * µs 5. ms ms ms, DC.. 5 T C = 25 C. * V GS > minimum V GS at which r DS(on) is specified Safe Operating Area, Junction-to-Case 2.5 25 5 75 25 5 T A - Ambient Temperature ( C) Current Derating**, Junction-to-Ambient 2 2. 9 Package Limited.5..5 25 5 75 25 5 T C - Case Temperature ( C) Current Derating**, Junction-to-Case. 25 5 75 25 5 T A - Ambient Temperature ( C) Power Derating, Junction-to-Ambient 5 2 9 25 5 75 25 5 T C - Case Temperature ( C) Power Derating, Junction-to-Case ** The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Duty Cycle =.5 Normalized Effective Transient Thermal Impedance t.2. Notes:..5 P DM.2 t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = C/W. T JM -T A =P DM Z (t) thja.. Surface Mounted - - -2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2. - - -2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case - 7
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 V GS =thru V 5 - Drain Current (A) I D 8 2 V 2 T J = 25 C T J = 25 C..5..5 2. 2.5 Output Characteristics.5 T J = - 55 C..8. 2..2. V GS - Gate-to-Source Voltage (V) Transfer Characteristics 25 - On-Resistance (Ω) r DS(on)..8.2.2 V GS =.5V V GS =V C - Capacitance (pf) 2 5 5 C oss C iss.2 2 8 2 On-Resistance vs. Drain Current C rss 2 8 2 Capacitance.8 - Gate-to-Source Voltage (V) 8 I D =5A V DS =2V V DS =V V DS =V r DS(on) - On-Resistance (Normalized)...2. I D =5A V GS =V V GS =.5V V GS 2.8 8 2 2 Q g - Total Gate Charge (nc) Gate Charge. - 5-25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 8
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted.2 I D =5A - Source Current (A) I S T J = 5 C T J = 25 C - On-Resistance (Ω) r DS(on).9.. T A = 25 C T A = 25 C....9.2.5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.7 2 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2 Variance (V) V GS(th).5.. I D = 25 µa I D =5mA 9 72 8 -. 2 -. - 5-25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage 2... Time (s) Power, Junction-to-Ambient 9 Limited byr DS(on) * 72 8 - Drain Current (A) ms ms ms s 2... Time (s) Power, Junction-to-Case I D... T A = 25 C. * V GS > minimum V GS at which r DS(on) is specified Safe Operating Area, Junction-to-Ambient s DC 9
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 7 Limited byr DS(on) * µs - Drain Current (A) I D. ms ms ms DC.. T C = 25 C. 25 5 75 25 5 * V GS > minimum V GS at which r DS(on) is specified T A - Ambient Temperature ( C) Safe Operating Area, Junction-to-Case Current Derating**, Junction-to-Ambient 22.5 8 2.8 9 Package Limited 2...7 25 5 75 25 5 25 5 75 25 5 75 T C - Case Temperature ( C) Current Derating**, Junction-to-Case T A - Ambient Temperature ( C) Power Derating, Junction-to-Ambient 5 28 2 7 25 5 75 25 5 75 T C - Case Temperature ( C) Power Derating, Junction-to-Case ** The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2 Notes:.. P DM t.5 t 2 t. Duty Cycle, D = t 2.2 2. Per Unit Base = R thja = 52 C/W. T JM -T A =P DM Z (t) thja.. Surface Mounted - - -2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2. - - -2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?7989.
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