STC04IE170HV. Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A Ω. Features. Application. Description

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Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features V CS(ON) I C R CS(ON) 0.7 V 4 A 0.17 Ω High voltage / high current cascode configuration Low equivalent ON resistance Very fast-switch: up to 150 khz Squared RBSOA: up to 1700 V Very low C ISS driven by R G = 47 Ω Very low turn-off cross over time Application Aux SMPS for three-phase mains Description The is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies. Figure 1. 1 234 TO247-4L HV Internal schematic diagrams Table 1. Device summary Order code Marking Package Packing C04IE170HV TO247-4L HV Tube June 2009 Doc ID 12676 Rev 3 1/9 www.st.com 9

Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CS(SS) Collector-source voltage (V BS = V GS = 0) 1700 V V BS(OS) Base-source voltage (I C = 0, V GS = 0) 30 V V SB(OS) Source-base voltage (I C = 0, V GS = 0) 17 V V GS Gate-source voltage ± 17 V I C Collector current 4 A I CM Collector peak current (t P < 5 ms) 8 A I B Base current 4 A I BM Base peak current (t P < 1 ms) 8 A P tot Total dissipation at T c 25 C 178 W T stg Storage temperature -40 to 150 C T J Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case 0.7 C/W 2/9 Doc ID 12676 Rev 3

Electrical characteristics 2 Electrical characteristics (T case = 25 C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CS(SS) I BS(OS) I SB(OS) I GS(OS) V CS(ON) h FE (1) V BS(ON) Collector cut-off current (V BS = V GS = 0) Base cut-off current (I C =0, V GS = 0) Source cut-off current (I C = 0, V GS = 0) Gate-source leakage current (V BS = 0) Collector-source ON voltage DC current gain Base-source ON voltage 1. Pulsed duration = 300 µs, duty cycle 1.5%. V CS = 1700 V 100 µa V BS = 30 V 10 µa V SB = 17 V 100 µa V GS = ± 17 V 100 na V GS = 10 V I C = 4 A I B = 0.8 A V GS = 10 V I C = 1.5 A I B = 0.15 A V CS = 1 V V GS = 10 V I C = 4 A V CS = 1 V V GS = 10 V I C = 1.5 A V GS = 10 V I C = 4 A I B = 0.8 A V GS = 10 V I C = 1.5 A I B = 0.15 A V GS(th) Gate threshold voltage V BS = V GS I B = 250 µa 2 3 4 V C iss Input capacitance (V GS = V CB = 0) V CS = 25 V f = 1 MHz 510 pf Q GS(tot) t s t f t s t f V CS(dyn) V CS(dyn) V CSW Gate-source charge (V CB = 0) Inductive load Storage time Fall time Inductive load Storage time Fall time Collector-source dynamic voltage (0.5 µs) Collector-source dynamic voltage (1 µs) Maximum collectorsource voltage at turnoff without snubber 4 7 0.7 0.6 5.5 11 1.3 0.9 1.5 1.4 1.5 1.1 V GS = 10 V 3.9 nc V GS = 10 V R G = 47 Ω V Clamp = 1360 V t p = 4 µs I C = 2 A I B = 0.4 A V GS =10 V R G = 47 Ω V Clamp = 1360 V t p = 4 µs I C = 2 A I B = 0.2 A V CC = V Clamp = 400 V V GS = 10 V I C = 1.5 A I B = 0.3 A t peak = 500 ns R G = 47 Ω I Bpeak = 3 A (2I C ) V CC = V Clamp = 400 V V GS = 10 V I C = 1.5 A I B = 0.3 A t peak = 500 ns R G = 47 Ω I Bpeak = 3 A (2I C ) 770 10 410 10 V V V V ns ns ns ns 5.36 V 4.32 V R G = 47 Ω h FE = 5 I C = 4 A 1700 V Doc ID 12676 Rev 3 3/9

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Collector-source dynamic voltage Figure 4. DC current gain Figure 5. Gate threshold voltage vs. temperature Figure 6. Collector-source ON voltage (h FE = 5) Figure 7. Collector-source ON voltage (h FE = 10) 4/9 Doc ID 12676 Rev 3

Electrical characteristics Figure 8. Base-source ON voltage (h FE = 5) Figure 9. Base-source ON voltage (h FE = 10) Figure 10. Inductive load switching time (h FE = 5) Figure 11. Inductive load switching time (h FE = 10) Figure 12. Reverse biased safe operating area Doc ID 12676 Rev 3 5/9

Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 6/9 Doc ID 12676 Rev 3

Package mechanical data TO247-4L HV mechanical data DIM. mm. MIN. TYP MAX. A 4.85 5.15 A1 2.20 2.50 2.60 A2 1.27 b 0.95 1.10 1.30 b1 1.10 1.50 b2 2.50 2.90 c 0.40 0.80 D 23.85 24 24.15 D1 21.50 E 15.45 15.60 15.75 e 2.54 e1 5.08 L 10.20 10.80 L1 2.20 2.50 2.80 L2 18.50 L3 3 øp 3.55 3.65 S 5.50 7734874_A Doc ID 12676 Rev 3 7/9

Revision history 4 Revision history Table 5. Document revision history Date Revision Changes 11-Sep-2006 1 First release. 21-Nov-2006 2 Improved application target. 16-Jun-2009 3 Updated Figure 2 on page 4 and mechanical data. 8/9 Doc ID 12676 Rev 3

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