BUJ100LR. 1. General description. 2. Features and benefits. 3. Applications. 4. Pinning information. 5. Ordering information

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3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Electronic lighting ballasts Inverters Off-line self-oscillating power supplies 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 2 C collector 3 E emitter 3 2 1 TO-92 (SOT54) B C E sym123 5. Ordering information Table 2. Ordering information Type number Package Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

6. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V CESM collector-emitter peak voltage V BE = 0 V - 700 V V CBO collector-base voltage I E = 0 A - 700 V V CEO collector-emitter voltage I B = 0 A - 400 V V EBO emitter-base voltage I C = 0 A; I(Emitter) = ma - 9 V I C collector current DC; Fig. 1-1 A I CM peak collector current - 2 A I B base current DC - 0.5 A I BM peak base current - 1 A P tot total power dissipation T lead 25 C; Fig. 2-2.1 W T stg storage temperature -65 150 C T j junction temperature - 150 C 2 003aad545 I C (A) I C(max) 1-1 - 2 (1) DC - 3 1 2 3 V CL(CE) (V) Fig. 1. Forward bias safe operating area All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 2 / 11

120 003aae644 P der (%) 80 40 0 0 50 0 150 200 T lead ( C) Fig. 2. Normalized total power dissipation as a function of lead temperature All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 3 / 11

7. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-lead) R th(j-a) thermal resistance from junction to lead thermal resistance from junction to ambient free air Fig. 3 - - 60 K/W printed circuit board mounted; lead length 4 mm - 150 - K/W 2 001aab451 Z th(j-lead) (K/W) 1-1 P tp t -2-5 -4-3 -2-1 1 t p (s) Fig. 3. Transient thermal impedance from junction to lead as a function of pulse width All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 4 / 11

8. Characteristics Table 5. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I CES I EBO V CEOsus V CEsat V BEsat h FE collector-emitter cut-off current (base shorted) emitter-base cut-off current (collector open) collector-emitter sustaining voltage (base open) collector-emitter saturation voltage base-emitter saturation voltage DC current gain Dynamic characteristics V BE = 0 V; V CE = 700 V; T j = 125 C - - 5 ma V EB = 9 V; I C = 0 A; T lead = 25 C - - 1 ma I B = 0 A; I C = 1 ma; L C = 25 mh; T lead = 25 C; Fig. 4; Fig. 5 I C = 0.25 A; I B = 50 ma; T lead = 25 C; Fig. 6 I C = 0.5 A; I B = 125 ma; T lead = 25 C; Fig. 6 I C = 0.75 A; I B = 250 ma; T lead = 25 C; Fig. 6 I C = 0.25 A; I B = 50 ma; T lead = 25 C; Fig. 7 I C = 0.5 A; I B = 125 ma; T lead = 25 C; Fig. 7 400 - - V - 0.2 0.5 V - 0.3 1 V - 0.4 1.5 V - - 1 V - - 1.2 V I C = 0.5 ma; V CE = 2 V; T lead = 25 C 12 - - I C = 0.4 A; V CE = 5 V; T lead = 25 C; Fig. 8; Fig. 9 I C = 0.8 A; V CE = 5 V; T lead = 25 C; Fig. 8; Fig. 9 t f fall time I C = 1 A; I Bon = 200 ma; V BB = -5 V; L B = 1 µh; T lead = 25 C; inductive load; Fig. ; Fig. 11-30 5 7.5 20-80 - ns 50 V 0 Ω to 200 Ω I C (ma) horizontal oscilloscope vertical 250 30 Hz to 60 Hz 6 V 300 Ω 1 Ω 001aab987 Fig. 4. Test circuit for collector-emitter sustaining voltage 0 0 min V CE (V) V CEOsus 001aab988 Fig. 5. Oscilloscope display for collector-emitter sustaining voltage test waveform All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 5 / 11

2.0 V CEsat (V) 1.6 1.2 003aad548 T j = 125 C T j = 25 C 1.6 V BEsat (V) 1.4 1.2 1.0 T j = 25 C T j = - 35 C 003aad549 T j = - 35 C 0.8 0.8 0.6 T j = 125 C 0.4 0.4 0.2 0-2 - 1 1 I C (A) 0-2 - 1 1 I C (A) Fig. 6. Collector-emitter saturation voltage as a function of collector current; typical values Fig. 7. Base-emitter saturation voltage as a function of collector current; typical values 2 003aad546 2 003aad547 T j = 125 C T j = 125 C h FE h FE T j = 25 C T j = - 35 C T j = 25 C T j = - 35 C V CE = 3 V (1) (2) (3) 1-3 - 2-1 1 I C (A) V CE = 5 V (1) (2) (3) 1-3 - 2-1 1 I C (A) Fig. 8. DC current gain as a function of collector current; typical values Fig. 9. DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 6 / 11

V CC I C L C I Con 90 % IBon V BB L B DUT 001aab991 % Fig.. Test circuit for inductive load switching t s t f t I B t off I Bon t - I Boff 001aab992 Fig. 11. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 7 / 11

9. Package outline Fig. 12. Package outline TO-92 (SOT54) All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 8 / 11

. Legal information Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft The document is a draft version only. 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11. Contents 1. General description...1 2. Features and benefits... 1 3. Applications... 1 4. Pinning information...1 5. Ordering information...1 6. Limiting values... 2 7. Thermal characteristics... 4 8. Characteristics...5 9. Package outline... 8. Legal information... 9 Co., Ltd. 2016. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 3 October 2016 All information provided in this document is subject to legal disclaimers. Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 11 / 11