2SA1962/FJA4213 PNP Epitaxial Silicon Transistor

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2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: = -15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : V CEO = -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5242/FJA4313. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 watts March 2008 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25 C unless otherwise noted Symbol Parameter Ratings Units BV CBO Collector-Base Voltage -230 V BV CEO Collector-Emitter Voltage -230 V BV EBO Emitter-Base Voltage -5 V Collector Current -15 A Base Current -1.5 A P D Total Device Dissipation(T C =25 C) Derate above 25 C 130 1.04 W W/ C T J, T STG Junction and Storage Temperature - 50 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* T a =25 C unless otherwise noted Symbol Parameter Max. Units R θjc Thermal Resistance, Junction to Case 0.96 C/W * Device mounted on minimum pad size h FE Classification Classification R O h FE1 55 ~ 110 80 ~ 160 2SA1962/FJA4213 Rev. A2 1

Electrical Characteristics* T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage =-5mA, I E =0-230 V BV CEO Collector-Emitter Breakdown Voltage =-10mA, R BE = -230 V BV EBO Emitter-Base Breakdown Voltage I E =-5mA, =0-5 V BO Collector Cut-off Current V CB =-230V, I E =0-5.0 µa I EBO Emitter Cut-off Current V EB =-5V, =0-5.0 µa h FE1 DC Current Gain V CE =-5V, =-1A 55 160 h FE2 DC Current Gain V CE =-5V, =-7A 35 60 V CE (sat) Collector-Emitter Saturation Voltage =-8A, =-0.8A -0.4-3.0 V V BE (on) Base-Emitter On Voltage V CE =-5V, =-7A -1.0-1.5 V f T Current Gain Bandwidth Product V CE =-5V, =-1A 30 MHz C ob Output Capacitance V CB =-10V, f=1mhz 360 pf * Pulse Test: Pulse Width=20µs, Duty Cycle 2% Ordering Information Part Number Marking Package Packing Method Remarks 2SA1962RTU A1962R TO-3P TUBE hfe1 R grade 2SA1962OTU A1962O TO-3P TUBE hfe1 O grade FJA4213RTU J4213R TO-3P TUBE hfe1 R grade FJA4213OTU J4213O TO-3P TUBE hfe1 O grade 2SA1962/FJA4213 Rev. A2 2

Typical Characteristics [ma], COLLECTOR CURRENT -20-18 -16-14 -12-10 -8-6 -4-2 00 0 = -1A -0-2 -4-6 -8-10 Figure 1. Static Characteristic Tj=-25 o C = -600mA = -500mA = -400mA = -300mA = -200mA = -ma V CE [V], COLLECTOR-EMITTER VOLTAGE VOLTAGE Tj=25 o C SATURATION Tj=125 o CVbe(sat)[mV], = -900mA = -800mA = -700mA Ic=-10Ib 10 1 00 0 o Tj = 125 GAIN CURRENT DC ChFE, Tj = 25 o C Tj=125 o CVce(sat)[mV], SATURATION VOLTAGE Tj = -25 o C 1 10 [A], COLLECTOR CURRENT Figure 2. DC current Gain Tj=25 o C V CE = -5V Ic=-10Ib Tj=-25 o C 0.1 1 10 Ic[A], COLLECTOR CURRENT 10 0.1 1 10 Ic[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage IC[A], COLLECTOR CURRENT 14 12 10 8 6 4 2 VCE = 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VBE[V], BASE-EMITTER VOLTAGE Transient Thermal Resistance, R thjc [ o C / W] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 Pulse duration [sec] Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance 2SA1962/FJA4213 Rev. A2 3

Typical Characteristics P C [W], POWER DISSIPATION 160 140 120 80 60 40 20 0 0 25 50 75 125 150 175 T C [ o C], CASE TEMPERATURE Figure 7. Power Derating [A], COLLECTOR CURRENT - -10-1 -0.1 MAX. (Pulsed*) MAX. (DC) *SINGLE NONREPETITIVE PULSE T C =25[ o C] DC ms* 10ms* -0.01 1 10 V CE [V], COLLECTOR-EMITTER VOLTAGE Figure 8. Safe Operating Area 2SA1962/FJA4213 Rev. A2 4

Package Dimensions 15.60 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 13.90 ±0.20 TO-3P 12.76 ±0.20 3.80 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 4.80 ±0.20 1.50 +0.15 0.05 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 16.50 ±0.30 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 +0.15 0.05 Dimensions in Millimeters 2SA1962/FJA4213 Rev. A2 5

TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO i-lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power220 Power247 POWEREDGE Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 2SA1962/FJA4213 Rev. A2 6 Rev. I31