UNISONIC TECHNOLOGIES CO., LTD TF219 Preliminary JFET

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Transcription:

UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF219 is an N-Channel Junction FET, it uses UTC s advanced technology to provide the customers with high voltage gain, etc. The UTC TF219 is suitable for electret capacitor microphone applications. FEATURES * High voltage gain EQUIVALENT CIRCUIT Drain Gate Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 TF219L-x-AQ3-R TF219G-x-AQ3-R SOT-723 D S G Tape Reel Note: Pin Assignment: D: Drain S: Source G: Gate MARKING 1 of 5 Copyright 2017 Unisonic Technologies Co., Ltd

ABSOLUTE MAXIMUM RATINGS (T A =25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Drain Voltage V GDO -20 V Drain Current I D 10 ma Gate Current I G 10 ma Allowable Power Dissipation P D 100 mw Junction Temperature T J +125 C Storage Temperature Range T STG -55 ~ +125 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A =25 С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate to Drain Breakdown Voltage V (BR)GDO I G =-100μA -20 V Drain Current I DSS V DS =2V, V GS =0V 210 350 μa Gate Off Voltage V GS(OFF) V DS =2V, I D =1μA, I DSS =250μA -0.3 V Forward Transfer Admittance Yfs V DS =2V, V GS =0V, I DSS =250μA 2.1 ms Input Capacitance C ISS V DS =2V, V GS =0V, f =1MHz 9.0 pf V IN =10mV, I DSS =100μA 1.3 db Voltage Gain G V V IN =10mV, I DSS =250μA 3.4 db V IN =10mV, I DSS =350μA 3.6 db Delta Voltage Gain G V (V) V DD =2V~1.5V, R L =2.2kΩ, Cg=5pF, f=1khz, V IN =10mV -0.7 db Frequency Characteristics G V (f) V DD =2V, R L =2.2kΩ, Cg=5pF, f=1khz~110hz, V IN =10mV -0.2 db Output Noise Voltage V NO V DD =3V, Cg=5pF, A-Curve Filter, R L =1.0kΩ I DSS =250μA -106 db V DD =3V, Cg=5pF, A-Curve Filter, R L =2.2kΩ I DSS =250μA -103 db Total Harmonic Distortion THD V IN =30mV, I DSS =250μA 1.0 % CLASSIFICATION OF I DSS RANK C I DSS (μa) 210 ~ 350 UNISONIC TECHNOLOGIES CO., LTD 2 of 5

TEST CIRCUITS Voltage Gain Frequency Characteristics Total Harmonic Distortion V DD R L Cg Output V IN Output Noise Voltage V DD R L Cg A-curve Filter V CN (r ms) UNISONIC TECHNOLOGIES CO., LTD 3 of 5

TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD 4 of 5

TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 5 of 5